Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12

We have investigated the anisotropy of the magnetoresistance in the Pr-based HF compound PrFe4P12. The large anisotropy of effective mass and its strong field dependence have been confirmed by resistivity measurements. Particularly for H||[111], where the effective mass is most strongly enhanced, the non-Fermi liquid behavior has been observed. Also, we have found the angular dependence of the magnetoresistance sharply enhanced at H||[111], which is evidently correlated with both the non-Fermi liquid behavior and the high-field ordered state (B-phase).Comment: 3 pages, 3 figures. J. Phys. Soc. Jpn. Vol.77, No.8, in pres

Measuring electrical current during scanning probe oxidation

Electrical current is measured during scanning probe oxidation by performing force versus distance curves under the application of a positive sample voltage. It is shown how the time dependence of the current provides information about the kinetics of oxide growth under conditions in which the tip-surface distance is known unequivocally during current acquisition. Currentmeasurements at finite tip-sample distance, in particular, unveil how the geometry of the meniscus influences its electrical conduction properties as well as the role of space charge at very small tip-sample distances

On the origin of multiple ordered phases in PrFe4P12

The nature of multiple electronic orders in skutterudite PrFe_4P_{12} is discussed on the basis of a model with antiferro-quadrupole (AFQ) interaction of \Gamma_3 symmetry. The high-field phase can be reproduced qualitatively provided (i) ferro-type interactions are introduced between the dipoles as well as between the octupoles of localized f-electrons, and (ii) separation is vanishingly small between the \Gamma_1-\Gamma_4^{(1)} crystalline electric field (CEF) levels. The high-field phase can have either the same ordering vector q=(1,0,0) as in the low-field phase, or a different one q=0 depending on the parameters. In the latter case, distortion of the crystal perpendicular to the (111) axis is predicted. The corresponding anomaly in elastic constants should also appear. The electrical resistivity is calculated with account of scattering within the CEF quasi-quartet. It is found that the resistivity as a function of the direction of magnetic field shows a sharp maximum around the (111) axis at low temperatures because of the level crossing.Comment: 16 pages, 5 figure

Design of Optomechanical Cavities and Waveguides on a Simultaneous Bandgap Phononic-Photonic Crystal Slab

In this paper we study and design quasi-2D optomechanical crystals, waveguides, and resonant cavities formed from patterned slabs. Two-dimensional periodicity allows for in-plane pseudo-bandgaps in frequency where resonant optical and mechanical excitations localized to the slab are forbidden. By tailoring the unit cell geometry, we show that it is possible to have a slab crystal with simultaneous optical and mechanical pseudo-bandgaps, and for which optical waveguiding is not compromised. We then use these crystals to design optomechanical cavities in which strongly interacting, co-localized photonic-phononic resonances occur. A resonant cavity structure formed by perturbing a "linear defect" waveguide of optical and acoustic waves in a silicon optomechanical crystal slab is shown to support an optical resonance at wavelength 1.5 micron and a mechanical resonance of frequency 9.5 GHz. These resonances, due to the simultaneous pseudo-bandgap of the waveguide structure, are simulated to have optical and mechanical radiation-limited Q-factors greater than 10^7. The optomechanical coupling of the optical and acoustic resonances in this cavity due to radiation pressure is also studied, with a quantum conversion rate, corresponding to the scattering rate of a single cavity photon via a single cavity phonon, calculated to be 292 kHz.Comment: 18 pages, 10 figures. minor revisions; version accepted for publicatio

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.Comment: 16 pages, 4 figure