Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap

The electronic structure of a prototype dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied by magnetic circular dichroism (MCD) spectroscopy. We prove that the optical transitions originated from impurity bands cause the strong positive MCD background. The MCD signal due to the E0 transition from the valence band to the conduction band is negative indicating that the p-d exchange interactions between the p-carriers and d-spin is antiferromagnetic. The negative E0 MCD signal also indicates that the hole-doping of the valence band is not so large as previously assumed. The impurity bands seem to play important roles for the ferromagnetism of Ga1-xMnxAs.Comment: 13 pages, 3 figure

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots

We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to define the initial spin polarization of neutral excitons. The conservation of the linear polarization generated along the bright exciton eigenaxes of up to 90% and the conversion from circular- to linear polarization of up to 47% both demonstrate a very long spin relaxation time with respect to the radiative lifetime. Results are quantitatively compared with a model of pseudo-spin 1/2 including heavy-to-light hole mixing.Comment: 5 pages, 3 figure

Antireflective photonic structure for coherent nonlinear spectroscopy of single magnetic quantum dots

This work presents epitaxial growth and optical spectroscopy of CdTe quantum dots (QDs) in (Cd,Zn,Mg)Te barriers placed on the top of (Cd,Zn,Mg)Te distributed Bragg reflector. The formed photonic mode in our half-cavity structure permits to enhance the local excitation intensity and extraction efficiency of the QD photoluminescence, while suppressing the reflectance within the spectral range covering the QD transitions. This allows to perform coherent, nonlinear, resonant spectroscopy of individual QDs. The coherence dynamics of a charged exciton is measured via four-wave mixing, with the estimated dephasing time $T_2=(210\,\pm\,40)$ ps. The same structure contains QDs doped with single Mn$^{2+}$ ions, as detected in photoluminescence spectra. Our work therefore paves the way toward investigating and controlling an exciton coherence coupled, via $s$,$p$-$d$ exchange interaction, with an individual spin of a magnetic dopant.Comment: 6 pages, 5 figure

Correlated Photon Emission from a Single II-VI Quantum Dot

We report correlation and cross-correlation measurements of photons emitted under continuous wave excitation by a single II-VI quantum dot (QD) grown by molecular-beam epitaxy. A standard technique of microphotoluminescence combined with an ultrafast photon correlation set-up allowed us to see an antibunching effect on photons emitted by excitons recombining in a single CdTe/ZnTe QD, as well as cross-correlation within the biexciton ($X_{2}$)-exciton ($X$) radiative cascade from the same dot. Fast microchannel plate photomultipliers and a time-correlated single photon module gave us an overall temporal resolution of 140 ps better than the typical exciton lifetime in II-VI QDs of about 250ps.Comment: 4 pages, 3 figures, to appear in Appl. Phys. Let

Single spin optical read-out in CdTe/ZnTe quantum dot studied by photon correlation spectroscopy

Spin dynamics of a single electron and an exciton confined in CdTe/ZnTe quantum dot is investigated by polarization-resolved correlation spectroscopy. Spin memory effects extending over at least a few tens of nanoseconds have been directly observed in magnetic field and described quantitatively in terms of a simple rate equation model. We demonstrate an effective (68%) all-optical read-out of the single carrier spin state through probing the degree of circular polarization of exciton emission after capture of an oppositely charged carrier. The perturbation introduced by the pulsed optical excitation serving to study the spin dynamics has been found to be the main source of the polarization loss in the read-out process. In the limit of low laser power the read-out efficiency extrapolates to a value close to 100%. The measurements allowed us as well to determine neutral exciton spin relaxation time ranging from 3.4 +/- 0.1 ns at B = 0 T to 16 +/- 3 ns at B = 5 T.Comment: to appear in Phys. Rev.

Light and electric field control of ferromagnetism in magnetic quantum structures

A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid.Comment: 4 pages and 3 figure

Selected papers from the international conference on reconfigurable computing and FPGAs (ReConFig'10)

n/

An empirical study on the impact of collaborative R&D networks on enterprise innovation performance based on the mediating effect of technology standard setting

Against the background of economic globalization, high-technology enterprises need to focus on the characteristics of corporate collaboration R&amp;D networks and Standard-Setting. In this paper, theoretical research on corporate collaboration R&amp;D network characteristics, technology standard-setting capability, and technology innovation performance is carried out, and a theoretical model and hypotheses are constructed. We apply Structural Equation Modeling (SEM) to conduct an empirical analysis based on national data surveys of 12 industries. The conclusions are as follows: (1) Corporate collaboration R&amp;D networks and technology standard-setting capability have a positive and significant impact on technology innovation performance; (2) Technology’s standard-setting capability has been identified to play a full intermediary role in the relationship between the breadth of connections and innovation efficiency. This paper provides a practical reference for enterprises to assess the value of collaborative R&amp;D networks and improve their technology standard-setting capability for enhanced economic efficiency.</jats:p

Theory of Magnetic Anisotropy in III_{1-x}Mn_{x}V Ferromagnets

We present a theory of magnetic anisotropy in ${\rm III}_{1-x}{\rm Mn}_{x}{\rm V}$ diluted magnetic semiconductors with carrier-induced ferromagnetism. The theory is based on four and six band envelope functions models for the valence band holes and a mean-field treatment of their exchange interactions with ${\rm Mn}^{++}$ ions. We find that easy-axis reorientations can occur as a function of temperature, carrier density $p$, and strain. The magnetic anisotropy in strain-free samples is predicted to have a $p^{5/3}$ hole-density dependence at small $p$, a $p^{-1}$ dependence at large $p$, and remarkably large values at intermediate densities. An explicit expression, valid at small $p$, is given for the uniaxial contribution to the magnetic anisotropy due to unrelaxed epitaxial growth lattice-matching strains. Results of our numerical simulations are in agreement with magnetic anisotropy measurements on samples with both compressive and tensile strains. We predict that decreasing the hole density in current samples will lower the ferromagnetic transition temperature, but will increase the magnetic anisotropy energy and the coercivity.Comment: 15 pages, 15 figure