High-level cefotaxime-resistant Proteus mirabilis strain isolated from a Tunisian intensive care unit ward: CTX-M-8 extended-spectrum β-lactamase coproduced with a plasmid mediated AmpC lactamase

The aimed of this study was to determine the implication of the biochemical and the molecular mechanism and to describe the properties of an extended-spectrum β-lactamase (ESBL) CTX-M-8 which was reported for the first time in Africa. A clinical isolate of Proteus mirabilis FS6449 was isolated from a patient hospitalized at an intensive care unit of the Military Hospital in Tunisia in 2009. Antimicrobial susceptibility was determined with the disk diffusion method according to Clinical and Laboratory Standards Institute (CLSI) guidelines and revealed that this strain was resistant to expanded-spectrum β-lactams. Analysis of P. mirabilis FS6449 by double-disk synergy test yielded a positive result suggesting the production of ESBLs. Sonicate of the isolate hydrolysed cefotaxime and benzylpenicillin. Isoelectric focusing exhibited four β-lactamase bands of isoelectric points (pIs) 5.6, 6, 6.5 and over 7.6. Polymerase chain reaction (PCR) and sequencing experiments revealed the presence of four β-lactamase genes encoding TEM-2, CTX-M-8, TEM-24, and an AmpC enzyme. Among them, the genes encoding TEM-24 and an AmpC enzyme were transferred to the recipient by conjugation experiments.Keywords: Resistance, β-lactamase, Proteus mirabilisAfrican Journal of Biotechnology Vol. 12(21), pp. 3278-328

Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)2_2ClO4_4 at high magnetic fields

Magnetoresistance measurements have been carried out along the highly conducting a axis in the FISDW phase of hydrogened and deuterated (TMTSF)$_2$ClO$_4$ for various cooling rates through the anion ordering temperature. With increasing the cooling rate, a) the high field phase boundary $\beta_{\rm {HI}}$, observed at 27 T in hydrogened samples for slowly cooled, is shifted towards a lower field, b) the last semimetallic SDW phase below $\beta_{\rm {HI}}$ is suppressed, and c) the FISDW insulating phase above $\beta_{\rm {HI}}$ is enhanced in both salts. The cooling rate dependence of the FISDW transition and of $\beta_{\rm {HI}}$ in both salts can be explained by taking into account the peculiar SDW nesting vector stabilized by the dimerized gap due to anion ordering.Comment: 6pages,6figures(EPS), accepted for publication in PR

Selfoscillations of Suspended Carbon Nanotubes with a Deflection Sensitive Resistance under Voltage Bias

We theoretically investigate the electro-mechanics of a Suspended Carbon Nanotube with a Deflection Sensitive Resistance subjected to a homogeneous Magnetic Field and a constant Voltage Bias. We show that, (with the exception of a singular case), for a sufficiently high magnetic field the time-independent state of charge transport through the nanotube becomes unstable to selfexcitations of the mechanical vibration accompanied by oscialltions in the voltage drop and current across the nanotube.Comment: 4 pages, 1 figur

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.Comment: 10 pages, 5 figures; ACS Nano (2011

Insulating behavior in ultra-thin bismuth selenide field effect transistors

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV

Random Convex Hulls and Extreme Value Statistics

In this paper we study the statistical properties of convex hulls of $N$ random points in a plane chosen according to a given distribution. The points may be chosen independently or they may be correlated. After a non-exhaustive survey of the somewhat sporadic literature and diverse methods used in the random convex hull problem, we present a unifying approach, based on the notion of support function of a closed curve and the associated Cauchy's formulae, that allows us to compute exactly the mean perimeter and the mean area enclosed by the convex polygon both in case of independent as well as correlated points. Our method demonstrates a beautiful link between the random convex hull problem and the subject of extreme value statistics. As an example of correlated points, we study here in detail the case when the points represent the vertices of $n$ independent random walks. In the continuum time limit this reduces to $n$ independent planar Brownian trajectories for which we compute exactly, for all $n$, the mean perimeter and the mean area of their global convex hull. Our results have relevant applications in ecology in estimating the home range of a herd of animals. Some of these results were announced recently in a short communication [Phys. Rev. Lett. {\bf 103}, 140602 (2009)].Comment: 61 pages (pedagogical review); invited contribution to the special issue of J. Stat. Phys. celebrating the 50 years of Yeshiba/Rutgers meeting

A Lightweight Deep Learning Based Microwave Brain Image Network Model for Brain Tumor Classification Using Reconstructed Microwave Brain (RMB) Images

Computerized brain tumor classification from the reconstructed microwave brain (RMB) images is important for the examination and observation of the development of brain disease. In this paper, an eight-layered lightweight classifier model called microwave brain image network (MBINet) using a self-organized operational neural network (Self-ONN) is proposed to classify the reconstructed microwave brain (RMB) images into six classes. Initially, an experimental antenna sensor-based microwave brain imaging (SMBI) system was implemented, and RMB images were collected to create an image dataset. It consists of a total of 1320 images: 300 images for the non-tumor, 215 images for each single malignant and benign tumor, 200 images for each double benign tumor and double malignant tumor, and 190 images for the single benign and single malignant tumor classes. Then, image resizing and normalization techniques were used for image preprocessing. Thereafter, augmentation techniques were applied to the dataset to make 13,200 training images per fold for 5-fold cross-validation. The MBINet model was trained and achieved accuracy, precision, recall, F1-score, and specificity of 96.97%, 96.93%, 96.85%, 96.83%, and 97.95%, respectively, for six-class classification using original RMB images. The MBINet model was compared with four Self-ONNs, two vanilla CNNs, ResNet50, ResNet101, and DenseNet201 pre-trained models, and showed better classification outcomes (almost 98%). Therefore, the MBINet model can be used for reliably classifying the tumor(s) using RMB images in the SMBI system. 2023 by the authors.This work was supported by the Universiti Kebangsaan Malaysia project grant code DIP-2021-024. This work was also supported by Grant NPRP12S-0227-190164 from the Qatar National Research Fund, a member of the Qatar Foundation, Doha, Qatar, and the claims made herein are solely the responsibility of the authors. Open access publication is supported by the Qatar National Library.Scopu

Channel Length Scaling of MoS2 MOSFETs

In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS2 transistors. We observe no obvious short channel effects on the device with 100 nm channel length (Lch) fabricated on a 5 nm thick MoS2 2D crystal even when using 300 nm thick SiO2 as gate dielectric, and has a current on/off ratio up to ~109. We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS2 transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS2 interface, where a fully transparent contact is needed to achieve a high-performance short channel device.Comment: 22 pages, 6 figures; ACS Nano, ASAP, 201

Integrated Circuits Based on Bilayer MoS

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.United States. Office of Naval Research (Young Investigator Program)Microelectronics Advanced Research Corporation (MARCO) (Focus Center for Materials, Structure and Device (MARCO MSD))National Science Foundation (U.S.) (NSF DMR 0845358)United States. Army Research Offic