Graphene-like metallic-on-silicon field effect transistor

In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field effect transistor based on graphene. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar

Glutamate Dysfunction in People with Prodromal Symptoms of Psychosis:Relationship to Gray Matter Volume

Background: The glutamate model of schizophrenia proposes that altered glutamatergic neurotransmission is fundamental to the development of the disorder. In addition, its potential to mediate neurotoxicity raises the possibility that glutamate dysfunction could underlie neuroanatomic changes in schizophrenia. Here we determine whether changes in brain glutamate are present in subjects at ultra high risk of developing psychosis and whether these changes are related to reductions in cortical gray matter volume. Methods: Twenty-seven individuals with an at-risk mental state and a group of 27 healthy volunteers underwent proton magnetic resonance spectroscopy and volumetric proton magnetic resonance imaging using a 3-Tesla scanner. Glutamate and glutamine levels were measured in anterior cingulate, left hippocampus, and left thalamus. These measures were then related to cortical gray matter volume. Results: At-risk mental state (ARMS) subjects had significantly lower levels of glutamate than control subjects in the thalamus (p < .05) but higher glutamine in the anterior cingulate (p < .05). Within the ARMS group, the level of thalamic glutamate was directly correlated with gray matter volume in the medial temporal cortex and insula (p < .01). Conclusions: This study provides the first evidence that brain glutamate function is perturbed in people with prodromal signs of schizophrenia and that glutamatergic dysfunction is associated with a reduction in gray matter volume in brain regions thought to be critical to the pathogenesis of the disorder. These findings support the hypothesis that drugs affecting the glutamate system may be of benefit in the early stages of psychotic illness. © 2009 Society of Biological Psychiatry

Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature

ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates. A multi-target rf-sputtering system was used for the growth of all oxide films as multilayers in a single growth run without breaking the vacuum in the growth chamber. The nitrogen-containing films (less than 1.5 at.% of nitrogen) were n-type ZnO when deposited in oxygen-deficient Ar plasma (10% O2) and p-type ZnO when deposited in oxygen-rich Ar plasma (50% O2). The all-oxide homojunction ITO/n-ZnO/p-ZnO/ITO/glass was fabricated in a single deposition run and exhibited visible transparency in the range of 75–85%. The n/p ZnO homojunctions, having metallic contacts, formed on conventionally processed substrates showed a fairly unstable behavior concerning the current-voltage characteristics. However, the same homojunctions formed on Si3N4-patterned substrates and stored in atmosphere for a period of five months were stable exhibiting a turn-on voltage of around 1.5 V. The realization of a room temperature sputtered transparent and stable ZnO homojunction paves the way to the realization of all-oxide transparent optoelectronic devices

Tissue inhibitor of metalloproteinases-1 protects human neurons from staurosporine and HIV-1-induced apoptosis: mechanisms and relevance to HIV-1-associated dementia

HIV-1-associated dementia (HAD)-relevant proinflammatory cytokines robustly induce astrocyte tissue inhibitor of metalloproteinases-1 (TIMP-1). As TIMP-1 displays pleotropic functions, we hypothesized that TIMP-1 expression may serve as a neuroprotective response of astrocytes. Previously, we reported that chronically activated astrocytes fail to maintain elevated TIMP-1 expression, and TIMP-1 levels are lower in the brain of HAD patients; a phenomenon that may contribute to central nervous system pathogenesis. Further, the role of TIMP-1 as a neurotrophic factor is incompletely understood. In this study, we report that staurosporine (STS) and HIV-1ADA virus, both led to induction of apoptosis in cultured primary human neurons. Interestingly, cotreatment with TIMP-1 protects neurons from apoptosis and reverses neuronal morphological changes induced by these toxins. Further, the anti-apoptotic effect was not observed with TIMP-2 or -3, but was retained in a mutant of the N-terminal TIMP-1 protein with threonine-2 mutated to glycine (T2G) that is deficient in matrix metalloproteinase (MMP)-1, -2 and -3 inhibitory activity. Therefore, the mechanism is specific to TIMP-1 and partially independent of MMP-inhibition. Additionally, TIMP-1 modulates the Bcl-2 family of proteins and inhibits opening of mitochondrial permeability transition pores induced by HIV-1 or STS. Together, these findings describe a novel function, mechanism and direct role of TIMP-1 in neuroprotection, suggesting its therapeutic potential in HAD and possibly in other neurodegenerative diseases

Timp1 interacts with beta-1 integrin and CD63 along melanoma genesis and confers anoikis resistance by activating PI3-K signaling pathway independently of Akt phosphorylation

Background: Anoikis resistance is one of the abilities acquired along tumor progression. This characteristic is associated with metastasis development, since tumorigenic cells must survive independently of cell-matrix interactions in this process. in our laboratory, it was developed a murine melanocyte malignant transformation model associated with a sustained stressful condition. After subjecting melan-a melanocytes to 1, 2, 3 and 4 cycles of anchorage impediment, anoikis resistant cells were established and named 1C, 2C, 3C and 4C, respectively. These cells showed altered morphology and PMA independent cell growth, but were not tumorigenic, corresponding to pre-malignant cells. After limiting dilution of 4C pre-malignant cells, melanoma cell lines with different characteristics were obtained. Previous data from our group showed that increased Timp1 expression correlated with anoikis-resistant phenotype. Timp1 was shown to confer anchorage-independent growth capability to melan-a melanocytes and render melanoma cells more aggressive when injected into mice. However, the mechanisms involved in anoikis regulation by Timp1 in tumorigenic cells are not clear yet.Methods: the beta 1-integrin and Timp1 expression were evaluated by Western blotting and CD63 protein expression by flow cytometry using specific antibodies. To analyze the interaction among Timp1, CD63 and beta 1-integrin, immunoprecipitation assays were performed, anoikis resistance capability was evaluated in the presence or not of the PI3-K inhibitors, Wortmannin and LY294002. Relative expression of TIMP1 and CD63 in human metastatic melanoma cells was analyzed by real time PCR.Results: Differential association among Timp1, CD63 and beta 1-integrins was observed in melan-a melanocytes, 4C pre-malignant melanocytes and 4C11- and 4C11+ melanoma cells. Timp1 present in conditioned medium of melanoma cells rendered melan-a melanocytes anoikis-resistant through PI3-K signaling pathway independently of Akt activation. in human melanoma cell lines, in which TIMP1 and beta-1 integrin were also found to be interacting, TIMP1 and CD63 levels together was shown to correlate significantly with colony formation capacity.Conclusions: Our results show that Timp1 is assembled in a supramolecular complex containing CD63 and beta 1-integrins along melanoma genesis and confers anoikis resistance by activating PI3-K signaling pathway, independently of Akt phosphorylation. in addition, our data point TIMP1, mainly together with CD63, as a potential biomarker of melanoma.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Universidade Federal de São Paulo, Dept Pharmacol, São Paulo, BrazilUniversidade Federal de São Paulo, Microbiol Immunol & Parasitol Dept, São Paulo, BrazilUniversidade Federal de São Paulo, Dept Biochem, São Paulo, BrazilLudwig Inst Canc Res, São Paulo, BrazilUniversidade Federal de São Paulo, Dept Pharmacol, São Paulo, BrazilUniversidade Federal de São Paulo, Microbiol Immunol & Parasitol Dept, São Paulo, BrazilUniversidade Federal de São Paulo, Dept Biochem, São Paulo, BrazilFAPESP: 2011/12306-1FAPESP: 2010/18715-8CAPES: 2867/10Web of Scienc

Schottky contacts on CF4/H2 reactive ion etched β-SiC

CVD grown n-type β-SiC grown on a (100) Si substrate was reactive ion etched (RIE) in CF4/H2 gas mixtures. The etched surfaces were examined by SEM, FTIR-spectroscopy and AFM. Au Schottky diodes fabricated on the etched surface were compared to reference contacts on the non-etched surface. An oxidation step following the dry etching drastically improves the diode characteristics. © 1998 Elsevier Science Ltd. All rights reserved

Schottky contacts on CF4/H2 reactive ion etched β-SiC

CVD grown n-type β-SiC grown on a (100) Si substrate was reactive ion etched (RIE) in CF4/H2 gas mixtures. The etched surfaces were examined by SEM, FTIR-spectroscopy and AFM. Au Schottky diodes fabricated on the etched surface were compared to reference contacts on the non-etched surface. An oxidation step following the dry etching drastically improves the diode characteristics. © 1998 Elsevier Science Ltd. All rights reserved

Improvements in Pt-based Schottky contacts to 3C-SiC

Despite its structural shortcomings (stacking faults, twins and threading dislocations), 3C-SiC heteroepitaxially grown on Si still has potential for high temperature sensor applications for which stable electrical contacts are of extreme importance. Pt/Si multilayered metallisations were compared to conventional Pt ones in order to investigate the effect of excess Si to the metal/SiC interface and the possible improvements in the thermal stability. These contacts were annealed up to 750°C. Their electrical behaviour was analysed by I-V measurements while the interface between the metal system and the 3C-SiC surface was examined by transmission electron microscopy (TEM) and the formed phases were determined by X-ray diffraction (XRD). © 1999 Elsevier Science S.A

Improvements in Pt-based Schottky contacts to 3C-SiC

Despite its structural shortcomings (stacking faults, twins and threading dislocations), 3C-SiC heteroepitaxially grown on Si still has potential for high temperature sensor applications for which stable electrical contacts are of extreme importance. Pt/Si multilayered metallisations were compared to conventional Pt ones in order to investigate the effect of excess Si to the metal/SiC interface and the possible improvements in the thermal stability. These contacts were annealed up to 750°C. Their electrical behaviour was analysed by I-V measurements while the interface between the metal system and the 3C-SiC surface was examined by transmission electron microscopy (TEM) and the formed phases were determined by X-ray diffraction (XRD). © 1999 Elsevier Science S.A