Improvements in Pt-based Schottky contacts to 3C-SiC

Abstract

Despite its structural shortcomings (stacking faults, twins and threading dislocations), 3C-SiC heteroepitaxially grown on Si still has potential for high temperature sensor applications for which stable electrical contacts are of extreme importance. Pt/Si multilayered metallisations were compared to conventional Pt ones in order to investigate the effect of excess Si to the metal/SiC interface and the possible improvements in the thermal stability. These contacts were annealed up to 750°C. Their electrical behaviour was analysed by I-V measurements while the interface between the metal system and the 3C-SiC surface was examined by transmission electron microscopy (TEM) and the formed phases were determined by X-ray diffraction (XRD). © 1999 Elsevier Science S.A