109 research outputs found
Different origin of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N
The mechanism for the ferromagnetic order of (Ga,Mn)As and (Ga,Mn)N is
extensively studied over a vast range of Mn concentrations. We calculate the
electronic structures of these materials using density functional theory in
both the local spin density approximation and the LDA+U scheme, that we have
now implemented in the code SIESTA.
For (Ga,Mn)As, the LDA+U approach leads to a hole mediated picture of the
ferromagnetism, with an exchange constant =~ -2.8 eV. This is smaller
than that obtained with LSDA, which overestimates the exchange coupling between
Mn ions and the As holes.
In contrast, the ferromagnetism in wurtzite (Ga,Mn)N is caused by the
double-exchange mechanism, since a hole of strong character is found at the
Fermi level in both the LSDA and the LDA+U approaches. In this case the
coupling between the Mn ions decays rapidly with the Mn-Mn separation. This
suggests a two phases picture of the ferromagnetic order in (Ga,Mn)N, with a
robust ferromagnetic phase at large Mn concentration coexisting with a diluted
weak ferromagnetic phase.Comment: 12 pages, 11 figure
Semiconductor Device Modeling and Simulation for Electronic Circuit Design
This chapter covers different methods of semiconductor device modeling for electronic circuit simulation. It presents a discussion on physics-based analytical modeling approach to predict device operation at specific conditions such as applied bias (e.g., voltages and currents); environment (e.g., temperature, noise); and physical characteristics (e.g., geometry, doping levels). However, formulation of device model involves trade-off between accuracy and computational speed and for most practical operation such as for SPICE-based circuit simulator, empirical modeling approach is often preferred. Thus, this chapter also covers empirical modeling approaches to predict device operation by implementing mathematically fitted equations. In addition, it includes numerical device modeling approaches, which involve numerical device simulation using different types of commercial computer-based tools. Numerical models are used as virtual environment for device optimization under different conditions and the results can be used to validate the simulation models for other operating conditions
Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range
We report on a study of the ac conductivity and magneto-optical properties of
metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible
spectrum. Our analysis is based on the successful kinetic exchange model for
(III,Mn)V ferromagnetic semiconductors. We perform the calculations within the
Kubo formalism and treat the disorder effects pertubatively within the Born
approximation, valid for the metallic regime. We consider an eight-band
Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a
ten-band model with additional dispersionless bands simulating
phenomenologically the upper-mid-gap states induced by antisite and
interstitial impurities. These models qualitatively account for
optical-absorption experiments and predict new features in the mid-infrared
Kerr angle and magnetic-circular-dichroism properties as a function of Mn
concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte
Five Intermediate-Period Planets from the N2K Sample
We report the detection of five Jovian mass planets orbiting high metallicity
stars. Four of these stars were first observed as part of the N2K program and
exhibited low RMS velocity scatter after three consecutive observations.
However, follow-up observations over the last three years now reveal the
presence of longer period planets with orbital periods ranging from 21 days to
a few years. HD 11506 is a G0V star with a planet of \msini = 4.74 \mjup in a
3.85 year orbit. HD 17156 is a G0V star with a 3.12 \mjup planet in a 21.2 day
orbit. The eccentricity of this orbit is 0.67, one of the highest known for a
planet with a relatively short period. The orbital period for this planet
places it in a region of parameter space where relatively few planets have been
detected. HD 125612 is a G3V star with a planet of \msini = 3.5 \mjup in a 1.4
year orbit. HD 170469 is a G5IV star with a planet of \msini = 0.67 \mjup in a
3.13 year orbit. HD 231701 is an F8V star with planet of 1.08 \mjup in a 142
day orbit. All of these stars have supersolar metallicity. Three of the five
stars were observed photometrically but showed no evidence of brightness
variability. A transit search conducted for HD 17156 was negative but covered
only 25% of the search space and so is not conclusive.Comment: 13 pages, 9 figures, accepted ApJ Resubmitted here with some
additional data, modified Keplerian orbit
Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films
We have performed a systematic investigation of magnetotransport of a series
of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find
that the anisotropic magnetoresistance (AMR) generally decreases with
increasing magnetic anisotropy, with increasing Mn concentration and on low
temperature annealing. We show that the uniaxial magnetic anisotropy can be
clearly observed from AMR for the samples with x >= 0.02. This becomes the
dominant anisotropy at elevated temperatures, and is shown to rotate by 90o on
annealing. We find that the in-plane longitudinal resistivity depends not only
on the relative angle between magnetization and current direction, but also on
the relative angle between magnetization and the main crystalline axes. The
latter term becomes much smaller after low temperature annealing. The planar
Hall effect is in good agreement with the measured AMR indicating the sample is
approximately in a single domain state throughout most of the magnetisation
reversal, with a two-step magnetisation jump ascribed to domain wall nucleation
and propagation.Comment: 27 pages, 8 figures, accepted by Phys. Rev.
Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
We report on a comprehensive combined experimental and theoretical study of
Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad
agreement between theoretical expectations and measured data allows us to
conclude that T_c in high-quality metallic samples increases linearly with the
number of uncompensated local moments on Mn_Ga acceptors, with no sign of
saturation. Room temperature ferromagnetism is expected for a 10% concentration
of these local moments. Our magnetotransport and magnetization data are
consistnent with the picture in which Mn impurities incorporated during growth
at interstitial Mn_I positions act as double-donors and compensate neighboring
Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I
antiferromagnetic coupling. These defects can be efficiently removed by
post-growth annealing. Our analysis suggests that there is no fundamental
obstacle to substitutional Mn_Ga doping in high-quality materials beyond our
current maximum level of 6.2%, although this achievement will require further
advances in growth condition control. Modest charge compensation does not limit
the maximum Curie temperature possible in ferromagnetic semiconductors based on
(Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.
Anisotropic Magnetoresistance in GaMnAs
We have measured the magnetoresistance in a series of GaMnAs
samples with 0.033 0.053 for three mutually orthogonal orientations
of the applied magnetic field. The spontaneous resistivity anisotropy (SRA) in
these materials is negative (i.e. the sample resistance is higher when its
magnetization is perpendicular to the measuring current than when the two are
parallel) and has a magnitude on the order of 5% at temperatures near 10K and
below. This stands in contrast to the results for most conventional magnetic
materials where the SRA is considerably smaller in magnitude for those few
cases in which a negative sign is observed. The magnitude of the SRA drops from
its maximum at low temperatures to zero at T in a manner that is consistent
with mean field theory. These results should provide a significant test for
emerging theories of transport in this new class of materials.Comment: 4 pages with 4 figures. Submitted to Physical Review
High-Temperature Hall Effect in Ga(1-x)Mn(x)As
The temperature dependence of the Hall coefficient of a series of
ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K <
T < 500K. We model the Hall coefficient assuming a magnetic susceptibility
given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to
rho_xx^2(T), and including a constant diamagnetic contribution in the
susceptibility. For all low resistivity samples this model provides excellent
fits to the measured data up to T=380K and allows extraction of the hole
concentration (p). The calculated p are compared to alternative methods of
determining hole densities in these materials: pulsed high magnetic field (up
to 55 Tesla) technique at low temperatures (less than the Curie temperature),
and electrochemical capacitance- voltage profiling. We find that the Anomalous
Hall Effect (AHE) contribution to rho_xy is substantial even well above the
Curie temperature. Measurements of the Hall effect in this temperature regime
can be used as a testing ground for theoretical descriptions of transport in
these materials. We find that our data are consistent with recently published
theories of the AHE, but they are inconsistent with theoretical models
previously used to describe the AHE in conventional magnetic materials.Comment: 6 pages, 5 figures, 1 table. Accepted to Phys.Rev.
A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors
A density functional theory of ferromagnetism in heterostructures of compound
semiconductors doped with magnetic impurities is presented. The variable
functions in the density functional theory are the charge and spin densities of
the itinerant carriers and the charge and localized spins of the impurities.
The theory is applied to study the Curie temperature of planar heterostructures
of III-V semiconductors doped with manganese atoms. The mean-field,
virtual-crystal and effective-mass approximations are adopted to calculate the
electronic structure, including the spin-orbit interaction, and the magnetic
susceptibilities, leading to the Curie temperature. By means of these results,
we attempt to understand the observed dependence of the Curie temperature of
planar -doped ferromagnetic structures on variation of their
properties. We predict a large increase of the Curie Temperature by additional
confinement of the holes in a -doped layer of Mn by a quantum well.Comment: 8 pages, 7 figure
Theory of ferromagnetic (III,Mn)V semiconductors
The body of research on (III,Mn)V diluted magnetic semiconductors initiated
during the 1990's has concentrated on three major fronts: i) the microscopic
origins and fundamental physics of the ferromagnetism that occurs in these
systems, ii) the materials science of growth and defects and iii) the
development of spintronic devices with new functionalities. This article
reviews the current status of the field, concentrating on the first two, more
mature research directions. From the fundamental point of view, (Ga,Mn)As and
several other (III,Mn)V DMSs are now regarded as textbook examples of a rare
class of robust ferromagnets with dilute magnetic moments coupled by
delocalized charge carriers. Both local moments and itinerant holes are
provided by Mn, which makes the systems particularly favorable for realizing
this unusual ordered state. Advances in growth and post-growth treatment
techniques have played a central role in the field, often pushing the limits of
dilute Mn moment densities and the uniformity and purity of materials far
beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds,
material quality and magnetic properties are intimately connected. In the
review we focus on the theoretical understanding of the origins of
ferromagnetism and basic structural, magnetic, magneto-transport, and
magneto-optical characteristics of simple (III,Mn)V epilayers, with the main
emphasis on (Ga,Mn)As. The conclusions we arrive at are based on an extensive
literature covering results of complementary ab initio and effective
Hamiltonian computational techniques, and on comparisons between theory and
experiment.Comment: 58 pages, 49 figures Version accepted for publication in Rev. Mod.
Phys. Related webpage: http://unix12.fzu.cz/ms
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