Island formation without attractive interactions

We show that adsorbates on surfaces can form islands even if there are no attractive interactions. Instead strong repulsion between adsorbates at short distances can lead to islands, because such islands increase the entropy of the adsorbates that are not part of the islands. We suggest that this mechanism cause the observed island formation in O/Pt(111), but it may be important for many other systems as well.Comment: 11 pages, 4 figure

Impeller blade design method for centrifugal compressors

The design of a centrifugal impeller with blades that are aerodynamically efficient, easy to manufacture, and mechanically sound is discussed. The blade design method described here satisfies the first two criteria and with a judicious choice of certain variables will also satisfy stress considerations. The blade shape is generated by specifying surface velocity distributions and consists of straight-line elements that connect points at hub and shroud. The method may be used to design radially elemented and backward-swept blades. The background, a brief account of the theory, and a sample design are described

Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime

We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the quantum Hall effect regime can be well described by a hopping law (R_{xx} \propto exp{-(T_0/T)^p}) with p=0.6. We discuss this result in terms of variable range hopping in a Coulomb gap together with a dependence of the electron localization length on the energy in the gap. The value of the exponent p>0.5 shows that electron-electron interactions have to be taken into account in order to explain the occurrence of the quantum Hall effect in these samples, which have a three-dimensional single electron density of states.Comment: 5 pages, 2 figures, 1 tabl

Injection and detection of spin in a semiconductor by tunneling via interface states

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in itself, but in parallel with direct tunneling. The spin accumulation induced in the semiconductor channel is not suppressed, as previously argued, but genuinely enhanced by the additional spin current via interface states. Spin detection with a ferromagnetic contact yields a weighted average of the spin accumulation in the channel and in the localized states. In the regime where the spin accumulation in the localized states is much larger than that in the channel, the detected spin signal is insensitive to the spin accumulation in the localized states and the ferromagnet probes the spin accumulation in the semiconductor channel.Comment: 7 pages, 2 figures. Theory onl

Thermal spin current and magnetothermopower by Seebeck spin tunneling

The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic electrode. Seebeck spin tunneling creates a thermal flow of spin-angular momentum across a tunnel barrier without a charge tunnel current. In ferromagnet/insulator/semiconductor tunnel junctions this can be used to induce a spin accumulation (\Delta \mu) in the semiconductor in response to a temperature difference (\Delta T) between the electrodes. A phenomenological framework is presented to describe the thermal spin transport in terms of parameters that can be obtained from experiment or theory. Key ingredients are a spin-polarized thermoelectric tunnel conductance and a tunnel spin polarization with non-zero energy derivative, resulting in different Seebeck tunnel coefficients for majority and minority spin electrons. We evaluate the thermal spin current, the induced spin accumulation and \Delta\mu/\Delta T, discuss limiting regimes, and compare thermal and electrical flow of spin across a tunnel barrier. A salient feature is that the thermally-induced spin accumulation is maximal for smaller tunnel resistance, in contrast to the electrically-induced spin accumulation that suffers from the impedance mismatch between a ferromagnetic metal and a semiconductor. The thermally-induced spin accumulation produces an additional thermovoltage proportional to \Delta\mu, which can significantly enhance the conventional charge thermopower. Owing to the Hanle effect, the thermopower can also be manipulated with a magnetic field, producing a Hanle magnetothermopower.Comment: 10 pages, 3 figures, 1 tabl

Non-perturbative renormalization of moments of parton distribution functions

We compute non-perturbatively the evolution of the twist-2 operators corresponding to the average momentum of non-singlet quark densities. The calculation is based on a finite-size technique, using the Schr\"odinger Functional, in quenched QCD. We find that a careful choice of the boundary conditions, is essential, for such operators, to render possible the computation. As a by-product we apply the non-perturbatively computed renormalization constants to available data of bare matrix elements between nucleon states.Comment: Lattice2003(Matrix); 3 pages, 3 figures. Talk by A.

Phonon-assisted tunneling in the quantum regime of Mn12-ac

Longitudinal or transverse magnetic fields applied on a crystal of Mn12-ac allows to observe independent tunnel transitions between m=-S+p and m=S-n-p (n=6-10, p=0-2 in longitudinal field and n=p=0 in transverse field). We observe a smooth transition (in longitudinal) from coherent ground-state to thermally activated tunneling. Furthermore two ground-state relaxation regimes showing a crossover between quantum spin relaxation far from equilibrium and near equilibrium, when the environment destroys multimolecule correlations. Finally, we stress that the complete Hamiltonian of Mn12 should contain odd spin operators of low order

Phase transition of the nucleon-antinucleon plasma at different ratios

We investigate phase transitions for the Walecka model at very high temperatures. As is well known, depending on the parametrization of this model and for the particular case of a zero chemical potential ($\mu$), a first order phase transition is possible \cite{theis}. We investigate this model for the case in which $\mu \ne 0$. It turns out that, in this situation, phases with different values of antinucleon-nucleon ratios and net baryon densities may coexist. We present the temperature versus antinucleon-nucleon ratio as well as the temperature versus the net baryon density for the coexistence region. The temperature versus chemical potential phase diagram is also presented.Comment: 5 pages, 8 figure