24,941 research outputs found
Island formation without attractive interactions
We show that adsorbates on surfaces can form islands even if there are no
attractive interactions. Instead strong repulsion between adsorbates at short
distances can lead to islands, because such islands increase the entropy of the
adsorbates that are not part of the islands. We suggest that this mechanism
cause the observed island formation in O/Pt(111), but it may be important for
many other systems as well.Comment: 11 pages, 4 figure
Impeller blade design method for centrifugal compressors
The design of a centrifugal impeller with blades that are aerodynamically efficient, easy to manufacture, and mechanically sound is discussed. The blade design method described here satisfies the first two criteria and with a judicious choice of certain variables will also satisfy stress considerations. The blade shape is generated by specifying surface velocity distributions and consists of straight-line elements that connect points at hub and shroud. The method may be used to design radially elemented and backward-swept blades. The background, a brief account of the theory, and a sample design are described
Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime
We investigate the magnetoresistance of epitaxially grown, heavily doped
n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean
free path (23 nm). The temperature dependence of the dissipative resistance
R_{xx} in the quantum Hall effect regime can be well described by a hopping law
(R_{xx} \propto exp{-(T_0/T)^p}) with p=0.6. We discuss this result in terms of
variable range hopping in a Coulomb gap together with a dependence of the
electron localization length on the energy in the gap. The value of the
exponent p>0.5 shows that electron-electron interactions have to be taken into
account in order to explain the occurrence of the quantum Hall effect in these
samples, which have a three-dimensional single electron density of states.Comment: 5 pages, 2 figures, 1 tabl
Injection and detection of spin in a semiconductor by tunneling via interface states
Injection and detection of spin accumulation in a semiconductor having
localized states at the interface is evaluated. Spin transport from a
ferromagnetic contact by sequential, two-step tunneling via interface states is
treated not in itself, but in parallel with direct tunneling. The spin
accumulation induced in the semiconductor channel is not suppressed, as
previously argued, but genuinely enhanced by the additional spin current via
interface states. Spin detection with a ferromagnetic contact yields a weighted
average of the spin accumulation in the channel and in the localized states. In
the regime where the spin accumulation in the localized states is much larger
than that in the channel, the detected spin signal is insensitive to the spin
accumulation in the localized states and the ferromagnet probes the spin
accumulation in the semiconductor channel.Comment: 7 pages, 2 figures. Theory onl
Thermal spin current and magnetothermopower by Seebeck spin tunneling
The recently observed Seebeck spin tunneling, the thermoelectric analog of
spin-polarized tunneling, is described. The fundamental origin is the spin
dependence of the Seebeck coefficient of a tunnel junction with at least one
ferromagnetic electrode. Seebeck spin tunneling creates a thermal flow of
spin-angular momentum across a tunnel barrier without a charge tunnel current.
In ferromagnet/insulator/semiconductor tunnel junctions this can be used to
induce a spin accumulation (\Delta \mu) in the semiconductor in response to a
temperature difference (\Delta T) between the electrodes. A phenomenological
framework is presented to describe the thermal spin transport in terms of
parameters that can be obtained from experiment or theory. Key ingredients are
a spin-polarized thermoelectric tunnel conductance and a tunnel spin
polarization with non-zero energy derivative, resulting in different Seebeck
tunnel coefficients for majority and minority spin electrons. We evaluate the
thermal spin current, the induced spin accumulation and \Delta\mu/\Delta T,
discuss limiting regimes, and compare thermal and electrical flow of spin
across a tunnel barrier. A salient feature is that the thermally-induced spin
accumulation is maximal for smaller tunnel resistance, in contrast to the
electrically-induced spin accumulation that suffers from the impedance mismatch
between a ferromagnetic metal and a semiconductor. The thermally-induced spin
accumulation produces an additional thermovoltage proportional to \Delta\mu,
which can significantly enhance the conventional charge thermopower. Owing to
the Hanle effect, the thermopower can also be manipulated with a magnetic
field, producing a Hanle magnetothermopower.Comment: 10 pages, 3 figures, 1 tabl
Non-perturbative renormalization of moments of parton distribution functions
We compute non-perturbatively the evolution of the twist-2 operators
corresponding to the average momentum of non-singlet quark densities. The
calculation is based on a finite-size technique, using the Schr\"odinger
Functional, in quenched QCD. We find that a careful choice of the boundary
conditions, is essential, for such operators, to render possible the
computation. As a by-product we apply the non-perturbatively computed
renormalization constants to available data of bare matrix elements between
nucleon states.Comment: Lattice2003(Matrix); 3 pages, 3 figures. Talk by A.
Phonon-assisted tunneling in the quantum regime of Mn12-ac
Longitudinal or transverse magnetic fields applied on a crystal of Mn12-ac
allows to observe independent tunnel transitions between m=-S+p and m=S-n-p
(n=6-10, p=0-2 in longitudinal field and n=p=0 in transverse field). We observe
a smooth transition (in longitudinal) from coherent ground-state to thermally
activated tunneling. Furthermore two ground-state relaxation regimes showing a
crossover between quantum spin relaxation far from equilibrium and near
equilibrium, when the environment destroys multimolecule correlations. Finally,
we stress that the complete Hamiltonian of Mn12 should contain odd spin
operators of low order
Phase transition of the nucleon-antinucleon plasma at different ratios
We investigate phase transitions for the Walecka model at very high
temperatures. As is well known, depending on the parametrization of this model
and for the particular case of a zero chemical potential (), a first
order phase transition is possible \cite{theis}. We investigate this model for
the case in which . It turns out that, in this situation, phases
with different values of antinucleon-nucleon ratios and net baryon densities
may coexist. We present the temperature versus antinucleon-nucleon ratio as
well as the temperature versus the net baryon density for the coexistence
region. The temperature versus chemical potential phase diagram is also
presented.Comment: 5 pages, 8 figure
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