Probing the phase diagram of CeRu_2Ge_2 by thermopower at high pressure

The temperature dependence of the thermoelectric power, S(T), and the electrical resistivity of the magnetically ordered CeRu_2Ge_2 (T_N=8.55 K and T_C=7.40 K) were measured for pressures p < 16 GPa in the temperature range 1.2 K < T < 300 K. Long-range magnetic order is suppressed at a p_c of approximately 6.4 GPa. Pressure drives S(T) through a sequence of temperature dependences, ranging from a behaviour characteristic for magnetically ordered heavy fermion compounds to a typical behaviour of intermediate-valent systems. At intermediate pressures a large positive maximum develops above 10 K in S(T). Its origin is attributed to the Kondo effect and its position is assumed to reflect the Kondo temperature T_K. The pressure dependence of T_K is discussed in a revised and extended (T,p) phase diagram of CeRu_2Ge_2.Comment: 7 pages, 6 figure

Anisotropy, disorder, and superconductivity in CeCu2Si2 under high pressure

Resistivity measurements were carried out up to 8 GPa on single crystal and polycrystalline samples of CeCu2Si2 from differing sources in the homogeneity range. The anisotropic response to current direction and small uniaxial stresses was explored, taking advantage of the quasi-hydrostatic environment of the Bridgman anvil cell. It was found that both the superconducting transition temperature Tc and the normal state properties are very sensitive to uniaxial stress, which leads to a shift of the valence instability pressure Pv and a small but significant change in Tc for different orientations with respect to the tetragonal c-axis. Coexistence of superconductivity and residual resistivity close to the Ioffe-Regel limit around 5 GPa provides a compelling argument for the existence of a valence-fluctuation mediated pairing interaction at high pressure in CeCu2Si2.Comment: 12 pages, 7 figure

High pressure study of the organic compound (TMTTF)2BF4

High pressure resistivity measurements of the organic compound (TMTTF)2BF4 have been performed in a newly developped Bridgman cell providing good pressure conditions on a wide pressure range. For the first time in this compound a zero resistance superconducting state is observed between 3 and 4 GPa. At temperatures above the superconducting transition, the resistivities of the two high quality samples show a different behavior. One sample, provides indications for a magnetic quantum critical point at the maximum of Tc, whereas in the other antiferromagnetic spin-fluctuations are present above T

Effect of pressure cycling on Iron: Signatures of an electronic instability and unconventional superconductivity

High pressure electrical resistivity and x-ray diffraction experiments have been performed on Fe single crystals. The crystallographic investigation provides direct evidence that in the martensitic $bcc \rightarrow hcp$ transition at 14 GPa the $\lbrace 110\rbrace_{bcc}$ become the $\lbrace 002\rbrace_{hcp}$ directions. During a pressure cycle, resistivity shows a broad hysteresis of 6.5 GPa, whereas superconductivity, observed between 13 and 31 GPa, remains unaffected. Upon increasing pressure an electronic instability, probably a quantum critical point, is observed at around 19 GPa and, close to this pressure, the superconducting $T_{c}$ and the isothermal resistivity ($0<T<300\,$K) attain maximum values. In the superconducting pressure domain, the exponent $n = 5/3$ of the temperature power law of resistivity and its prefactor, which mimics $T_{c}$, indicate that ferromagnetic fluctuations may provide the glue for the Cooper pairs, yielding unconventional superconductivity

Heavy Fermion superconductor CeCu2_2Si2_2 under high pressure: multiprobing the valence crossover

The first heavy fermion superconductor CeCu$_2$Si$_2$ has not revealed all its striking mysteries yet. At high pressures, superconductivity is supposed to be mediated by valence fluctuations, in contrast to ambient pressure, where spin fluctuations most likely act as pairing glue. We have carried out a multiprobe (electric transport, thermopower, ac specific heat, Hall and Nernst effects) experiment up to $7 \text{GPa}$ on a high quality CeCu$_2$Si$_2$ single crystal. Reliable resistivity data reveal for the first time a scaling behavior close to the supposed valence transition, and allow to locate the critical end point at $4.5\pm0.2 \text{GPa}$ and a slightly negative temperature. In the same pressure region, remarkable features have also been detected in the other physical properties, acting as further signatures of the Ce valence crossover and the associated critical fluctuations.Comment: 13 pages, 14 figure

Hidden Variables in Bipartite Networks

We introduce and study random bipartite networks with hidden variables. Nodes in these networks are characterized by hidden variables which control the appearance of links between node pairs. We derive analytic expressions for the degree distribution, degree correlations, the distribution of the number of common neighbors, and the bipartite clustering coefficient in these networks. We also establish the relationship between degrees of nodes in original bipartite networks and in their unipartite projections. We further demonstrate how hidden variable formalism can be applied to analyze topological properties of networks in certain bipartite network models, and verify our analytical results in numerical simulations

Epitaxial growth and transport properties of Nb-doped SrTiO3_{3} thin films

Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 \AA $$ steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and low residual resistivity of the order of 10$^{-4}$$\Omega$cm. At 0.3 K, a sharp superconducting transition, reaching zero resistance, is observed.Comment: 4 pages, 4 figure