Results for Channel Error Profiles for DECT

This letter presents the main statistical characterization of the underlying error process obtained in the case of the Digital European Cordless Telecommunications (DECT) radio system. By simulation of the transmission link, error sequences are generated for different channel parameters. Relevant statistics are then computed for the purpose of efficient channel coding design and evaluation

Magneto-Optical Spectrum Analyzer

We present a method for the investigation of gigahertz magnetization dynamics of single magnetic nano elements. By combining a frequency domain approach with a micro focus Kerr effect detection, a high sensitivity to magnetization dynamics with submicron spatial resolution is achieved. It allows spectra of single nanostructures to be recorded. Results on the uniform precession in soft magnetic platelets are presented.Comment: 5 pages, 7 figure

Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy

p-type Schottky barriers in Pt/3C-SiC contacts have been measured using ballistic hole emission microscopy (BHEM) and estimated to be ???0.06 eV higher than identically prepared Pt/p-type 4H-SiC contacts. This indicates the 3C-SiC valence band maximum (VBM) is ???0.06 eV below the 4H-SiC VBM, consistent with the calculated ???0.05 eV type-II valence band offset between these polytypes. We also observe no evidence of an additional VBM in 3C-SiC, which supports the proposal that the second VBM observed in BHEM spectra on 4H-SiC is a crystal-field split VBM located ???110 meV below the highest VBM.open6

Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts

Model metal-semiconductor nanostructure Schottky nanocontacts were made on cleaved heterostructures containing GaAs quantum wells (QWs) of varying width and were locally probed by ballistic electron emission microscopy. The local Schottky barrier was found to increase by ∼0.140 eV as the QW width was systematically decreased from 15 to 1 nm, due mostly to a large (∼0.200 eV) quantum-confinement increase to the QW conduction band. The measured barrier increase over the full 1 to 15 nm QW range was quantitatively explained when local "interface pinning" and image force lowering effects are also considered

Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayer Pt/Al/SiO2 interface

A ballistic electron emission microscopy (BEEM) comparison of the dependence on gate voltage of the average energy barrier of a metal bilayer Pt/Al/ SiO2 /Si sample and a Pt/ SiO2 /Si sample suggests that the metal/oxide interface of the Pt/Al/ SiO2 /Si sample is laterally inhomogeneous at nm length scales. However, BEEM images of the bilayer sample do not show significantly larger lateral variations than observed on a (uniform) Pt/ SiO2 /Si sample, indicating that any inhomogeneous "patches" of lower-energy barrier height have size smaller than the lateral resolution of BEEM, estimated for these samples to be ???10nm. Finite element electrostatic simulations of an assumed inhomogeneous interface with nm size patches of different effective work function can fit the experimental data of the bilayer sample much better than an assumed homogenous interface, indicating that the bilayer film is laterally inhomogeneous at the nm scale.open2

Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy

We show that "single" stacking fault 3C inclusions formed in 4H-SiC p-i-n diodes behave as electron quantum wells (QWs) with the QW energy depth of ???0.25 eV below 4H-SiC conduction band minimum, by measuring the Schottky barriers on and away from inclusions with ballistic electron emission microscopy (BEEM). The Schottky barrier on the 4H area ([11-20] oriented) is measured to be essentially the same as (0001) plane studied previously, indicating that the interface pinning effects on both crystal faces are almost identical. Additionally, BEEM current amplitude is observed to be very sensitive to subsurface damage induced by polishing.open91

Universal conductance fluctuations in three dimensional metallic single crystals of Si

In this paper we report the measurement of conductance fluctuations in single crystals of Si made metallic by heavy doping (n \approx 2-2.5n_c, n_c being critical composition at Metal-Insulator transition). Since all dimensions (L) of the samples are much larger than the electron phase coherent length L_\phi (L/L_\phi \sim 10^3), our system is truly three dimensional. Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations (UCF) as predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of L_\phi^3 was found to be saturated at \approx (e^2/h)^2. An accurate knowledge of the level of disorder, enables us to calculate the change in conductance \delta G_1 due to movement of a single scatterer as \delta G_1 \sim e^2/h, which is \sim 2 orders of magnitude higher than its theoretically expected value in 3D systems.Comment: Text revised version. 4 eps figs unchange

The analytic structure of 2D Euler flow at short times

Using a very high precision spectral calculation applied to the incompressible and inviscid flow with initial condition $\psi_0(x_1, x_2) = \cos x_1+\cos 2x_2$, we find that the width $\delta(t)$ of its analyticity strip follows a $\ln(1/t)$ law at short times over eight decades. The asymptotic equation governing the structure of spatial complex-space singularities at short times (Frisch, Matsumoto and Bec 2003, J.Stat.Phys. 113, 761--781) is solved by a high-precision expansion method. Strong numerical evidence is obtained that singularities have infinite vorticity and lie on a complex manifold which is constructed explicitly as an envelope of analyticity disks.Comment: 19 pages, 14 figures, published versio

Nonexistence of self-similar singularities for the 3D incompressible Euler equations

We prove that there exists no self-similar finite time blowing up solution to the 3D incompressible Euler equations. By similar method we also show nonexistence of self-similar blowing up solutions to the divergence-free transport equation in $\Bbb R^n$. This result has direct applications to the density dependent Euler equations, the Boussinesq system, and the quasi-geostrophic equations, for which we also show nonexistence of self-similar blowing up solutions.Comment: This version refines the previous one by relaxing the condition of compact support for the vorticit