Optimized alkylated cyclodextrin polysulphates with reduced risks on thromboembolic accidents improve osteoarthritic chondrocyte metabolism

Objectives. To compare the ability of different cyclodextrin polysulphate (CDPS) derivatives to affect human articular cartilage cell metabolism in vitro

Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.Comment: revtex4; 4+ pages, 5 figure

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off-state and the other is a conductive on-state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, non-volatile threshold switching, and current--voltage duality. From the systematic sample-size dependence of the resistance in on- and off-states, we conclude that the resistance switching is due to the homogeneous/inhomogeneous transition of the current distribution at the interface.Comment: 7 pages, 5 figures, REVTeX4, submitted to Phys. Rev. B (Feb. 23, 2007). If you can't download a PDF file of this manscript, an alternative one can be found on the author's website: http://staff.aist.go.jp/i.inoue

Narrow channel Si-MOSFETs for electron transport studies

We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices

Atomic Layer Deposition-Based Synthesis of Photoactive TiO2 Nanoparticle Chains by Using Carbon Nanotubes as Sacrificial Templates

Highly ordered and self supported anatase TiO2 nanoparticle chains were fabricated by calcining conformally TiO2 coated multi-walled carbon nanotubes (MWCNTs). During annealing, the thin tubular TiO2 coating that was deposited onto the MWCNTs by atomic layer deposition (ALD) was transformed into chains of TiO2 nanoparticles (~12 nm diameter) with an ultrahigh surface area (137 cm2 per cm2 of substrate), while at the same time the carbon from the MWCNTs was removed. Photocatalytic tests on the degradation of acetaldehyde proved that these forests of TiO2 nanoparticle chains are highly photo active under UV light because of their well crystallized anatase phase

Economic effects of stimulating business R&D

The main question dealt with in this paper is: what are the economic effects of these financial government incentives? The answer is of particular importance with a view to the question whether the government should intensify, or conversely, cut down on its R&D incentives policy. The economic effects of these R&D incentives are determined by a multitude of factors; factors which also tend to interact. In addition to the spillover effects referred to above, the main decisive factors are: the extent to which the government incentives really do lead to an increase in business R&D, and the direct effects of this extra R&D on business performance. A total of 12 mechanisms are distinguished, all of which have an effect on the economic effects of R&D incentives. These twelve mechanisms are placed in a total framework in this paper. All in all, this paper shows that the economic effects of the government?s stimulation of business R&D are particularly beneficial. The paper also sets out the mechanisms that lead to this result, and which mechanisms are of particular importance in this respect

Superconductor-insulator transition in nanowires and nanowire arrays

Superconducting nanowires are the dual elements to Josephson junctions, with quantum phase-slip processes replacing the tunneling of Cooper pairs. When the quantum phase-slip amplitude ES is much smaller than the inductive energy EL, the nanowire responds as a superconducting inductor. When the inductive energy is small, the response is capacitive. The crossover at low temperatures as a function of ES/EL is discussed and compared with earlier experimental results. For one-dimensional and two-dimensional arrays of nanowires quantum phase transitions are expected as a function of ES/EL. They can be tuned by a homogeneous magnetic frustration.Comment: 15 pages, 10 figure