Suppression of electron scattering resonances in graphene by quantum dots

Transmission of low-energetic electrons through two-dimensional materials leads to unique scattering resonances. These resonances contribute to photoemission from occupied bands where they appear as strongly dispersive features of suppressed photoelectron intensity. Using angle-resolved photoemission we have systematically studied scattering resonances in epitaxial graphene grown on the chemically differing substrates Ir(111), Bi/Ir, Ni(111) as well as in graphene/Ir(111) nanopatterned with a superlattice of uniform Ir quantum dots. While the strength of the chemical interaction with the substrate has almost no effect on the dispersion of the scattering resonances, their energy can be controlled by the magnitude of charge transfer from/to graphene. At the same time, a superlattice of small quantum dots deposited on graphene eliminates the resonances completely. We ascribe this effect to a nanodot-induced buckling of graphene and its local rehybridization from sp$^{2}$ to sp$^{3}$ towards a three-dimensional structure. Our results suggest nanopatterning as a prospective tool for tuning optoelectronic properties of two-dimensional materials with graphene-like structure.Comment: The following article has been submitted to Applied Physics Letters. If it is published, it will be found online at http://apl.aip.or

Rashba splitting of 100 meV in Au-intercalated graphene on SiC

Intercalation of Au can produce giant Rashba-type spin-orbit splittings in graphene but this has not yet been achieved on a semiconductor substrate. For graphene/SiC(0001), Au intercalation yields two phases with different doping. Here, we report the preparation of an almost pure p-type graphene phase after Au intercalation. We observe a 100 meV Rashba-type spin-orbit splitting at 0.9 eV binding energy. We show that this giant splitting is due to hybridization and much more limited in energy and momentum space than for Au-intercalated graphene on Ni

Laser-induced persistent photovoltage on the surface of a ternary topological insulator at room temperature

Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical concentration $x$=0.55, where the system becomes bulk insulating, a surface voltage can be driven at room temperature through the topological surface state solely by optical means. We further show that such a photovoltage persists over a time scale that exceeds $\sim$6 $\mu$s, i.e, much longer than the characteristic relaxation times of bulk states. We attribute the origin of the photovoltage to a laser-induced band-bending effect which emerges near the surface region on ultrafast time scales. The photovoltage is also accompanied by a remarkable increase in the relaxation times of excited states as compared to undoped topological insulators. Our findings are relevant in the context of applications of topological surface states in future optical devices.Comment: 5 pages, 4 figure

Ultrafast spin polarization control of Dirac fermions in topological insulators

Three-dimensional topological insulators (TIs) are characterized by spin-polarized Dirac-cone surface states that are protected from backscattering by time-reversal symmetry. Control of the spin polarization of topological surface states (TSSs) using femtosecond light pulses opens novel perspectives for the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Using time-, spin-, and angle-resolved spectroscopy, we directly monitor for the first time the ultrafast response of the spin polarization of photoexcited TSSs to circularly-polarized femtosecond pulses of infrared light. We achieve all-optical switching of the transient out-of-plane spin polarization, which relaxes in about 1.2 ps. Our observations establish the feasibility of ultrafast optical control of spin-polarized Dirac fermions in TIs and pave the way for novel optospintronic applications at ultimate speeds.Comment: 9 pages, 4 figure

Design issues for the VLSI implementation of universal approximator fuzzy systems

Comunicación presentada al "CSCC'99" celebrado en Atenas en Julio de 1999.Several VLSI realizations of fuzzy systems have been proposed in the literature in the recent years. They employ analog or digital circuitry, offering more or less programmability, implementing different inference methods, with different types of membership functions as well as different antecedents’ connectives. This paper centers this wide design space by fixing several parameters that allow efficient VLSI implementations of programmable fuzzy systems featuring first, second and third order accurate approximation. Hardware requirements are discussed and compared from the point of view of approximation capability or precision, thus attempting to a formalization that has never been applied before to the field of fuzzy hardware.This work has been partially supported by the Spanish CICYT Project TIC98-0869.Peer reviewe

Hidden spin-orbital texture at the Γˉ\bar{\Gamma}-located valence band maximum of a transition metal dichalcogenide semiconductor

Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the $p$-derived bulk valence bands of semiconducting 1T-HfSe$_2$ possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the $c$-axis. This hidden spin-polarisation manifests in a `coupled spin-orbital texture' with in-equivalent contributions from the constituent $p$-orbitals. While the overall spin-orbital texture for each Se sublayer is in strict adherence to time-reversal symmetry (TRS), spin-orbital mixing terms with net polarisations at time-reversal invariant momenta are locally maintained. These apparent TRS-breaking contributions dominate, and can be selectively tuned between with a choice of linear light polarisation, facilitating the observation of pronounced spin-polarisations at the Brillouin zone centre for all $k_z$. We discuss the implications for the generation of spin-polarised populations from 1T-structured transition metal dichalcogenides using a fixed energy, linearly polarised light source.Comment: 11 pages, 6 figure

Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb and Fe

Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS) surfaces both at room temperature and 38K. The coverage- and temperature-dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.1 monolayer at low temperature all three metals lead to a downward shift of the TI's bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution of the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behaviour consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pathways leads to the qualitatively similar and remarkable behavior for low temperature deposition that the chemical potential first moves upward (n-type dopant behavior) and then downward (p-type behavior) on increasing coverage.Comment: 10 pages, 4 figures. In our Phys. Rev. B manuscript an error was made in formulating the last sentence of the abstract that, unfortunately, was missed in the page proofs. Version 2 on arxiv has the correct formulation of this sentenc

Magnetostatic coupling of 90° domain walls in Fe19Ni81/Cu/Co trilayers

The magnetic interlayer coupling of Fe19Ni81/Cu/Co trilayered microstructures has been studied by means of x-ray magnetic circular dichroism in combination with photoelectron emission microscopy (XMCD-PEEM). We find that a parallel coupling between magnetic domains coexists with a non-parallel coupling between magnetic domain walls (DWs) of each ferromagnetic layer. We attribute the non-parallel coupling of the two magnetic layers to local magnetic stray fields arising at DWs in the magnetically harder Co layer. In the magnetically softer FeNi layer, non-ordinary DWs, such as 270° and 90° DWs with overshoot of the magnetization either inwards or outwards relative to the turning direction of the Co magnetization, are identified. Micromagnetic simulations reveal that in the absence of magnetic anisotropy, both types of overshooting DWs are energetically equivalent. However, if a uniaxial in-plane anisotropy is present, the relative orientation of the DWs with respect to the anisotropy axis determines which of these DWs is energetically favorable

Ferrimagnetic nanostructures for magnetic memory bits

Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the potential of heat-assisted magnetic recording on a patterned sample; a ferrimagnetic alloy composed of a rare earth and a transition metal, DyCo$_5$, which is grown on a hexagonal-ordered nanohole array membrane. The magnetization of the antidot array sample is out-of-plane oriented at room temperature and rotates towards in-plane upon heating above its spin-reorientation temperature (T$_R$) of ~350 K, just above room temperature. Upon cooling back to room temperature (below T$_R$), we observe a well-defined and unexpected in-plane magnetic domain configuration modulating with ~45 nm. We discuss the underlying mechanisms giving rise to this behavior by comparing the magnetic properties of the patterned sample with the ones of its extended thin film counterpart. Our results pave the way for novel applications of ferrimagnetic antidot arrays of superior functionality in magnetic nano-devices near room temperature.Comment: 19 pages, 4 figure

Probing two topological surface bands of Sb2Te3 by spin-polarized photoemission spectroscopy

Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a spin polarization of the occupied Dirac cone states of 80-90%, which is in reasonable agreement with the experimental data after careful background subtraction. Furthermore, we observe a strongly spin-orbit split surface band at lower energy. This state is found at 0.8eV below the Fermi level at the gamma-point, disperses upwards, and disappears at about 0.4eV below the Fermi level into two different bulk bands. Along the gamma-K direction, the band is located within a spin-orbit gap. According to an argument given by Pendry and Gurman in 1975, such a gap must contain a surface state, if it is located away from the high symmetry points of the Brillouin zone. Thus, the novel spin-split state is protected by symmetry, too.Comment: 8 pages, 10 figure