Attenuation lengths of high energy photoelectrons in compact and mesoporous SiO2 films

El pdf del artículo es la versión post-print.We have experimentally evaluated attenuation lengths (AL) of photoelectrons traveling in compact and micro and mesoporous (∼ 45% voids) SiO 2 thin films with high (8.2-13.2 keV) kinetic energies. The films were grown on polished Si(100) wafers. ALs were deduced from the intensity ratio of the Si 1s signal from the SiO 2 film and Si substrate using the two-peaks overlayer method. We obtain ALs of 15-22 nm and 23-32 nm for the compact and porous SiO 2 films for the range of kinetic energies considered. The observed AL values follow a power law dependence on the kinetic energy of the electrons where the exponent takes the values 0.81 ± 0.13 and 0.72 ± 0.12 for compact and porous materials, respectively. © 2012 Elsevier B.V. All rights reserved.We thank the Spanish MICINN (projects MAT2010-18447 and Consolider CSD2008-00023 and CPAN CSD2007-42) for financial support.Peer Reviewe

Simultaneous Surface Plasmon Resonance and X-ray Absorption Spectroscopy

We present here an experimental set-up to perform simultaneously measurements of surface plasmon resonance (SPR) and X-ray absorption spectroscopy (XAS) in a synchrotron beamline. The system allows measuring in situ and in real time the effect of X-ray irradiation on the SPR curves to explore the interaction of X-rays with matter. It is also possible to record XAS spectra while exciting SPR in order to detect the changes in the electronic configuration of thin films induced by the excitation of surface plasmons. Combined experiments recording simultaneously SPR and XAS curves while scanning different parameters can be carried out. The relative variations in the SPR and XAS spectra that can be detected with this set-up ranges from 10-3 to 10-5, depending on the particular experiment

Role of the metal supply pathway on silicon patterning by oblique ion beam sputtering

The dynamics of the pattern induced on a silicon surface by oblique incidence of a 40 keV Fe ion beam is studied. The results are compared with those obtained for two reference systems, namely a noble gas ion beam either without or with Fe co-deposition. The techniques employed include Atomic Force Microscopy, Rutherford Backscattering Spectrometry, Transmission Electron Microscopy, X-ray Photoelectron and hard X-ray photoelectron spectroscopies, as well as Superconducting Quantum Interference Device measurements. The Fe-induced pattern differs from those of both reference systems since a pattern displaying short hexagonal ordering develops, although it shares some features with them. In both Fe systems a chemical pattern, with iron silicide-rich and -poor regions, is formed upon prolonged irradiation. The metal pathway has a marked influence on the patterns’ morphological properties and on the spatial correlation between the chemical and morphological patterns. It also determines the iron silicide stoichiometry and the surface pattern magnetic properties that are better for the Fe-implanted system. These results show that in ion-beam-induced silicon surface patterning with reactive metals, the metal supply pathway is critical to determine not only the morphological pattern properties, but also the chemical and magnetic one

Large-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2films on graphene

Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe3GeTe2 (FGT) - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism (FM) - directly on graphene by employing molecular beam epitaxy. Morphological and structural characterization confirmed the realization of large-area, continuous FGT/graphene heterostructure films with stable interfaces and good crystalline quality. Furthermore, magneto-transport and x-ray magnetic circular dichroism investigations confirmed a robust out-of-plane FM in the layers, comparable to state-of-the-art exfoliated flakes from bulk crystals. These results are highly relevant for further research on wafer-scale growth of vdW heterostructures combining FGT with other layered crystals such as transition metal dichalcogenides for the realization of multifunctional, atomically thin devices.They also acknowledge the provision of beamtime under the project HC-4068 at the European Synchrotron Radiation Facility (ESRF), located in Grenoble (France). ICN2 researchers acknowledge support from the European Union Horizon 2020 research and innovation programme under Grant Agreement No. 881603 (Graphene Flagship)

A combined micro-Raman, X-ray absorption and magnetic study to follow the glycerol-assisted growth of epsilon-iron oxide sol-gel coatings

[EN] Epsilon iron oxide (ε-FeO) coatings on Si(100) substrates are obtained by an easy one-pot sol-gel recipe assisted by glycerol in an acid medium. Glycerol, given its small dimensions, enables the formation of ε-FeO nanoparticles with a size of a few nanometers and the highest purity is reached in coatings after a densification treatment at 960 °C. The structural and compositional evolution up to 1200 °C is studied by confocal Raman microscopy and X-ray absorption spectroscopy techniques, correlating the existing magnetic properties. We report a novel characterization method, which allows monitoring the evolution of the precursor micelles as well as the intermediate and final phases formed. Furthermore, the inherent industrial technology transfer of the sol-gel process is also demonstrated with the ε-FeO polymorph, impelling its application in the coatings form.This work has been supported by the Ministerio de Ciencia e Innovación (MCINN, Spain) through the projects PIE: 2021-60-E-030, PIE: 2010-6-OE-013, PID2019-104717RB-I00 (2020–2022), MAT2017-86540-C4-1-R, RTI2018-095856-B-C21 (2019–2021), RTI2018-097895-B-C43 and RTI2018-095303-A-C52. The authors are grateful to The ESRF (France), MCINN and Consejo Superior de Investigaciones Científicas (CSIC, Spain) for the provision of synchrotron radiation facilities and to the BM25-SpLine Staff for their valuable help. A.S.and A.M.-N acknowledge financial support from Comunidad de Madrid (Spain) for an “Atracción de Talento Investigador” Contract 2017-t2/IND5395 and 2018-T1/IND-10360, respectivel

Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy

Themechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs nanowire (NW) grown by selective area epitaxy (SAE) is studied. We demonstrate that the crystal structure in InAs NW grown by SAE can be controlled using basic growth parameters, and wurtzitelike InAs NWs are achieved.We link the polytypic InAs NWs SAE to the reconstruction of the growth front (111)B surface. Surface reconstruction study of InAs (111) substrate and the following homoepitaxy experiment suggest that (111) planar defect nucleation is related to the (1 × 1) reconstruction of InAs (111)B surface. In order to reveal it more clearly, a model is presented to correlate growth temperature and arsenic partial pressure with InAs NW crystal structure. This model considers the transition between (1 × 1) and (2 × 2) surface reconstructions in the frame of adatom atoms adsorption/desorption, and the polytypism is thus linked to reconstruction quantitatively. The experimental data fit well with the model, which highly suggests that surface reconstruction plays an important role in the polytypism phenomenon in InAs NWs SAE.https://doi.org/10.1103/PhysRevMaterials.1.074603Peer Reviewe

Large-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2films on graphene

Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe3GeTe2 (FGT) - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism (FM) - directly on graphene by employing molecular beam epitaxy. Morphological and structural characterization confirmed the realization of large-area, continuous FGT/graphene heterostructure films with stable interfaces and good crystalline quality. Furthermore, magneto-transport and x-ray magnetic circular dichroism investigations confirmed a robust out-of-plane FM in the layers, comparable to state-of-the-art exfoliated flakes from bulk crystals. These results are highly relevant for further research on wafer-scale growth of vdW heterostructures combining FGT with other layered crystals such as transition metal dichalcogenides for the realization of multifunctional, atomically thin devices

Characterization of a robust Co-II fluorescent complex deposited intact on HOPG

The new diimine fluorescent ligand ACRI-1 based on a central acridine yellow core is reported along with its coordination complex [Co-2(ACRI-1)(2)] (1), a fluorescent weak ferromagnet. Due to the strong fluorescence of the acridine yellow fluorophore, it is not completely quenched when the ligand is coordinated to Co-II. The magnetic properties of bulk complex 1 and its stability in solution have been studied. Complex 1 has been deposited on highly ordered pyrolitic graphite (HOGP) from solution. The thin films prepared have been characterized by AFM, time-of-flight secondary ion mass spectrometry (TOF-SIMS), grazing incidence X-ray diffraction (GIXRD), X-ray absorption spectroscopy (XAS), X-ray magnetic circular dichroism (XMCD) and theoretical calculations. The data show that the complex is robust and remains intact on the surface of graphite

Formation of titanium monoxide (001) single-crystalline thin film induced by ion bombardment of titanium dioxide (110)

© 2015 Macmillan Publishers Limited. All rights reserved. A plethora of technological applications justify why titanium dioxide is probably the most studied oxide, and an optimal exploitation of its properties quite frequently requires a controlled modification of the surface. Low-energy ion bombardment is one of the most extended techniques for this purpose and has been recently used in titanium oxides, among other applications, to favour resistive switching mechanisms or to form transparent conductive layers. Surfaces modified in this way are frequently described as reduced and defective, with a high density of oxygen vacancies. Here we show, at variance with this view, that high ion doses on rutile titanium dioxide (110) induce its transformation into a nanometric and single-crystalline titanium monoxide (001) thin film with rocksalt structure. The discovery of this ability may pave the way to new technical applications of ion bombardment not previously reported, which can be used to fabricate heterostructures and interfaces.Peer Reviewe

Geometric and electronic structure of the Cs-doped Bi2Se3(0001) surface

Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001) surface kept at room temperature. Two samples were investigated: a single Bi2Se3 crystal, whose surface was Ar sputtered and then annealed at ∼500∘C for several minutes prior to Cs deposition, and a 13-nm-thick epitaxial Bi2Se3 film that was not subject to sputtering and was annealed only at ∼350∘C. In the first case, a considerable fraction of Cs atoms occupy top layer Se atoms sites both on the terraces and along the upper step edges where they form one-dimensional-like structures parallel to the step. In the second case, Cs atoms occupy the fcc hollow site positions. First-principles calculations reveal that Cs atoms prefer to occupy Se positions on the Bi2Se3(0001) surface only if vacancies are present, which might be created during the crystal growth or during the surface preparation process. Otherwise, Cs atoms prefer to be located in fcc hollow sites in agreement with the experimental finding for the MBE-grown sample