Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band

Strong absorption of sub-band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However, despite the enhanced absorption in this material, the transformation of infrared radiation into an electrical signal via extrinsic photoconductivity—the critical performance requirement for many optoelectronic applications—has only been reported at low temperature because thermal impurity ionization overwhelms photoionization at room temperature. Here, dopant compensation is used to manipulate the optical and electronic properties and thereby improve the room-temperature infrared photoresponse. Silicon co-doped with boron and sulfur is fabricated using ion implantation and nanosecond pulsed laser melting to achieve supersaturated sulfur concentrations and a matched boron distribution. The location of the Fermi level within the sulfur-induced impurity band is controlled by tuning the acceptor-to-donor ratio, and through this dopant compensation, three orders of magnitude improvement in infrared detection at 1550 nm is demonstrated.Engineering and Applied Science

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm[superscript 2] 2-terminal monolithic perovskite/silicon multijunction solar cell with a V [subscript OC] as high as 1.65 V. We achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.Bay Area Photovoltaic Consortium (Contract DE-EE0004946)United States. Dept. of Energy (Contract DE-EE0006707

Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm−3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors

Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si

Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a limit to this behavior since ultrahigh Au concentrations (>1 x 10(20) cm(-3)) are expected to induce cellular breakdown during the rapid resolidification of Si, a process that is associated with significant lateral impurity precipitation. This work shows that the cellular morphology observed in Au-hyperdoped Si differs from that in conventional, steady-state cellular breakdown. In particular, Rutherford backscattering spectrometry combined with channeling and transmission electron microscopy revealed an inhomogeneous Au distribution and a subsurface network of Au-rich filaments, within which the Au impurities largely reside on substitutional positions in the crystalline Si lattice, at concentrations as high as similar to 3 at. %. The measured substitutional Au dose, regardless of the presence of Au-rich filaments, correlates strongly with the sub-band gap optical absorptance. Upon subsequent thermal treatment, the supersaturated Au forms precipitates, while the Au substitutionality and the sub-band gap optical absorption both decrease. These results offer insight into a metastable filamentary regime in Au-hyperdoped Si that has important implications for Si-based infrared optoelectronics.The US Army (Contract No. FA5209-16-P-0104) for partial financial support of this project

Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

e quantify the effects of growth temperature on material and deviceproperties of thermally evaporated SnSthin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.Chemistry and Chemical Biolog

Gold-hyperdoped Germanium with Room-Temperature Sub-bandgap Optoelectronic Response

Hyperdoping germanium with gold is a potential method to produce room-temperature short-wavelength-infrared radiation (SWIR; 1.4–3.0μm) photodetection. We investigate the charge carrier dynamics, light absorption, and structural properties of gold-hyperdoped germanium (Ge:Au) fabricated with varying ion implantation and nanosecond pulsed laser melting conditions. Time-resolved terahertz spectroscopy (TRTS) measurements show that Ge:Au carrier lifetime is significantly higher than that in previously studied hyperdoped silicon systems. Furthermore, we find that lattice composition, sub-band-gap optical absorption, and carrier dynamics depend greatly on hyperdoping conditions. We use density functional theory (DFT) to model dopant distribution, electronic band structure, and optical absorption. These simulations help explain experimentally observed differences in optical and optoelectronic behavior across different samples. DFT modeling reveals that substitutional dopant incorporation has the lowest formation energy and leads to deep energy levels. In contrast, interstitial or dopant-vacancy complex incorporation yields shallower energy levels that do not contribute to sub-band-gap light absorption and have a small effect on charge carrier lifetimes. These results suggest that it is promising to tailor dopant incorporation sites of Ge:Au for SWIR photodetection applications

Enhancing quantum efficiency of thin-film silicon solar cells by Pareto optimality

We present a composite design methodology for the simulation and optimization of the solar cell performance. Our method is based on the synergy of different computational techniques and it is especially designed for the thin-film cell technology. In particular, we aim to efficiently simulate light trapping and plasmonic effects to enhance the light harvesting of the cell. The methodology is based on the sequential application of a hierarchy of approaches: (a) full Maxwell simulations are applied to derive the photon’s scattering probability in systems presenting textured interfaces; (b) calibrated Photonic Monte Carlo is used in junction with the scattering matrices method to evaluate coherent and scattered photon absorption in the full cell architectures; (c) the results of these advanced optical simulations are used as the pair generation terms in model implemented in an effective Technology Computer Aided Design tool for the derivation of the cell performance; (d) the models are investigated by qualitative and quantitative sensitivity analysis algorithms, to evaluate the importance of the design parameters considered on the models output and to get a first order descriptions of the objective space; (e) sensitivity analysis results are used to guide and simplify the optimization of the model achieved through both Single Objective Optimization (in order to fully maximize devices efficiency) and Multi Objective Optimization (in order to balance efficiency and cost); (f) Local, Global and “Glocal” robustness of optimal solutions found by the optimization algorithms are statistically evaluated; (g) data-based Identifiability Analysis is used to study the relationship between parameters. The results obtained show a noteworthy improvement with respect to the quantum efficiency of the reference cell demonstrating that the methodology presented is suitable for effective optimization of solar cell devices