The effect of gate length on SOI-MOSFETS operation

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate length is increased, the output drain current characteristics slope is increased and therefore the transistor transconductance increases. Moreover, with increasing gate length, the effect of the drain voltage on the drain current was reduced, which resulted in reduced drain induced barrier lowering.Keywords: SOI-MOSFET, silicon, transconductance, drain voltage International Journal of Natural and Applied Sciences, 6(3): 373-376, 201

Electrical and optical properties of an organic semiconductor metal-free phthalocyanine (C

In a recent work we calculated some electronic properties of metal-free phthalocyanine such as band structure, density of states and energy gap. We have also presented some optical properties such as dielectric function, electrical loss function, optical conduction, absorption and refractive index, some of which have never been studied before. Calculations were performed in the framework of density functional theory (DFT), using the full-potential linearized augmented plane wave (FP-LAPW) method. This study presents the electrical gap energy of metal-free phthalocyanine to be Eg = 2.4 eV which is in good agreement with experimental data. A trap energy level is also observed. Optical band gap is about 2.48 eV with an optical trap level at 1.48 eV. In addition, we obtained the static refractive index in the x-, y- and z-directions as n0xx = 2.43, n0yy = 2.06 and n0zz = 2.32. Finally, absorption spectra display the existence of strong absorption bands at the wavelengths of 400 and 800 nm which compare favorably with experimental results

Study of some electronics properties of new superconductor Sr2VO3FeAs in ground state

In this paper, some electronics properties of new superconductor Sr2VO3FeAs, such as density of states, band structure, density of electron cloud and bound lengths in the ground state have been calculated. According to N(Ef) in ground state CV/T value has been estimated. The calculations were performed in the framework of density functional theory (DFT), using the full potential linearized augmented plane wave (FP-LAPW) method with the general gradient approximation (GGA)