Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS

A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology

With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with special layout techniques, this yields circuits with a high inherent robustness against X-rays and other ionizing radiation. In bandgap voltage references, the dominant radiation-susceptibility is then no longer associated with the MOS transistors, but is dominated by the diodes. This paper gives an analysis of radiation effects in both MOSdevices and diodes and presents a solution to realize a radiation-hard voltage reference circuit in a standard CMOS technology. A demonstrator circuit was implemented in a standard 0.13 m CMOS technology. Measurements show correct operation with supply voltages in the range from 1.4 V down to 0.85 V, a reference voltage of 405 mV 7.5 mV ( = 6mVchip-to-chip statistical spread), and a reference voltage shift of only 1.5 mV (around 0.8%) under irradiation up to 44 Mrad (Si)

A delay spread cancelling waveform characterizer for RF power amplifiers

A two channel 65 nm CMOS RF-waveform characterizer is presented that enables multi-harmonic Adaptive Matching Networks (AMN) or Adaptive Digital Pre-Distortion (ADPD) in RF-power amplifiers. The characterizer measures the DC component and the first 3 harmonics of RF signals by applying a DFT to 8 (ideally) equally spaced quasi-DC output voltages. Conventionally in these types of systems accuracy is limited by sample timing accuracies, which in our case are mainly due to delay cell mismatch. We introduce a novel way to cancel delay cell mismatch, that significantly increases measurement accuracy at the cost of only a small power and area increase. The RF-waveform characterizer achieves 6.8-bit measurement linearity together with a (clock feedthrough limited) 24 dB SFDR. The measured power consumption for our proof-of-principle demonstrator is 18.6 mW at a maximum input signal frequency of 1.1 GHz under continuous operation

Dependability investigation of wireless short range embedded systems: hardware platform oriented approach

A new direction in short-range wireless applications has appeared in the form of high-speed data communication devices for distances of hundreds meters. Behind these embedded applications, a complex heterogeneous architecture is built. Moreover, these short range communications are introduced into critical applications, where the dependability/reliability is mandatory. Thus, dependability concerns around reliability evaluation become a major challenge in these systems, and pose several questions to answer. Obviously, in such systems, the attribute reliability has to be investigated for various components and at different abstraction levels. In this paper, we discuss the investigation of dependability in wireless short range systems. We present a hardware platform for wireless system dependability analysis as an alternative for the time consuming simulation techniques. The platform is built using several instances of one of the commercial FPGA platforms available on the market place. We describe the different steps of building the wireless hardware platform for short range systems dependability analysis. Then, we show how this HW platform based dependability investigation framework can be a very interactive approach. Based on this platform we introduce a new methodology and a flow to investigate the different parts of system dependability at different abstraction levels. The benefits to use the proposed framework are three fold: first, it takes care of the whole system (HW/SW -digital part, mixed RF part, and wireless part); Second, the hardware platform enables to explore the application’s reliability under real environmental conditions taking into account the effect of the environment threats on the system; And last, the wireless platform built for dependability investigation present a fast investigation approach in comparison with the time consuming co-simulation technique

A 7-8 GHz serrodyne modulator in SiGe for MIMO signal generation

An 8-bit 360o sawtooth modulated phase shifter is used to apply very small frequency offsets to RF signals between 7 and 8 GHz. Offsets between 6 Hz and 10MHz can be obtained. Such frequency offsets can be used to generate orthogonal signals, which are required in e.g. MIMO applications. Each undesired frequency component is suppressed to below -30 dBc. The phase modulator is realized in a 250 nm SiGe BICMOS technology

RF Circuit linearity optimization using a general weak nonlinearity model

This paper focuses on optimizing the linearity in known RF circuits, by exploring the circuit design space that is usually available in today’s deep submicron CMOS technologies. Instead of using brute force numerical optimizers we apply a generalized weak nonlinearity model that only involves AC transfer functions to derive simple equations for obtaining design insights. The generalized weak nonlinearity model is applied to three known RF circuits: a cascode common source amplifier, a common gate LNA and a CMOS attenuator. It is shown that in deep submicron CMOS technologies the cascode transistor in both the common source amplifier and in the common gate amplifier significantly contributes IM3 distortion. Some design insights are presented for reducing the cascode transistor related distortion, among which moderate inversion biasing that improves IIP3 by 10 dB up to 5 GHz in a 90 nm CMOS process. For the attenuator, a wideband IM3 cancellation technique is introduced and demonstrated using simulations

Discrepancy between self-perceived mycophenolic acid-associated diarrhea and stool water content after kidney transplantation

BACKGROUND: Diarrhea is a well-known side effect of mycophenolic acid (MPA) use in kidney transplant recipients (KTRs). It is unknown whether self-reported diarrhea using the Modified Transplant Symptom Occurrence and Symptom Distress Scale (MTSOSD-59R) corresponds to stool water content and how both relate to MPA usage. METHODS: MTSOSD-59R questionnaires filled out by 700 KTRs from the TransplantLines Biobank and Cohort Study(NCT03272841) were analyzed and compared with stool water content. Stool samples(N=345) were freeze-dried and a water content ≥80% was considered diarrhea. RESULTS: Self-perceived diarrhea was reported by 46%, while stool water content ≥80% was present in 23% of KTRs. MPA use was not associated with self-perceived diarrhea (odds ratio(OR) 1.32; 95% confidence interval(CI), 0.87-1.99, P=0.2), while it was associated with stool water content ≥80% (OR 2.88; 95%CI, 1.41-5.89, P=0.004), independent of potential confounders. Adjustment for prior MPA discontinuation because of severe diarrhea, uncovered an association between MPA use and self-perceived diarrhea (OR 1.80; 95%CI, 1.13-2.89, P=0.01). CONCLUSIONS: These results suggest that reporting bias could add to the discrepancy between both methods for diarrhea assessment. We recommend use of objective biomarkers or more extensive questionnaires which assess information on stool frequency and stool consistency, to investigate post-transplantation diarrhea

A Single-Trim frequency reference system with 0.7 ppm/°C from −63 °C to 165 °C Consuming 210 μW at 70 MHz

This article presents a frequency reference system that combines high frequency accuracy and low power consumption using a single-point temperature trim and batch calibration. The system is intended as a low-cost fully integrated crystal oscillator replacement. In this system, the oscillation frequency of a power-efficient, but process, voltage, temperature (PVT) and lifetime (L)-sensitive current-controlled ring oscillator (CCO) is periodically (re)calibrated by the well-behaved frequency stability of an untuned LC -based Colpitts oscillator (LCO), which is optimized for stability over PVT variations and lifetime (PVTL). During the single-point room temperature factory trim, the frequency of the LCO is determined and the result is digitally stored. An on-chip calibration engine tunes the CCO to the target frequency based on the LCO frequency, temperature sensor information, and digitally stored trimming information, thus effectively improving the frequency stability of the ring oscillator. The relatively high-power LCO is heavily duty-cycled to minimize the overall power consumption. A prototype fabricated in a 0.13- μ m high-voltage (HV) CMOS SOI process and assembled in a plastic package demonstrates an inaccuracy lower than ±93 ppm over a temperature range from -63 °C to 165 °C across 18 samples. The presented frequency reference system, including on-chip voltage regulators and a temperature sensor, occupies a chip area of 0.69 mm2 and consumes about 64 μA from a single 3.3-V supply. The frequency error due to supply variation is roughly 92 ppm/V. The mean frequency shift due to aging, measured before and after a six-day storage bake at 175 °C, is only 52 ppm.</p