3,958 research outputs found

    High temperature thermoelectric efficiency in Ba8Ga16Ge30

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    The high thermoelectric figure of merit (zT) of Ba8Ga16Ge30 makes it one of the best n-type materials for thermoelectric power generation. Here, we describe the synthesis and characterization of a Czochralski pulled single crystal of Ba8Ga16Ge30 and polycrystalline disks. Measurements of the electrical conductivity, Hall effect, specific heat, coefficient of thermal expansion, thermal conductivity, and Seebeck coefficient were performed up to 1173 K and compared with literature results. Dilatometry measurements give a coefficient of thermal expansion of 16×10^−6 K^−1 up to 1175 K. The trend in electronic properties with composition is typical of a heavily doped semiconductor. The maximum in the thermoelectric figure of merit is found at 1050 K with a value of 0.8. The correction of zT due to thermal expansion is not significant compared to the measurement uncertainties involved. Comparing the thermoelectric efficiency of segmented materials, the effect of compatibility makes Ba8Ga16Ge30 more efficient than the higher zT n-type materials SiGe or skutterudite CoSb3

    Unchanged thermopower enhancement at the semiconductor-metal transition in correlated FeSb2−x_{2-x}Tex_x

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    Substitution of Sb in FeSb2_2 by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass m∗m^*. Spanning the entire range of the semiconductor-metal crossover, we observed an almost constant enhancement of the measured thermopower compared to that estimated by the classical theory of electron diffusion. Using the latter for a quantitative description one has to employ an enhancement factor of 10-30. Our observations point to the importance of electron-electron correlations in the thermal transport of FeSb2_2, and suggest a route to design thermoelectric materials for cryogenic applications.Comment: 3 pages, 3 figures, accepted for publication in Appl. Phys. Lett. (2011

    Escaping many-body localization in an exact eigenstate

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    Isolated quantum systems typically follow the eigenstate thermalization hypothesis, but there are exceptions, such as many-body localized (MBL) systems and quantum many-body scars. Here, we present the study of a weak violation of MBL due to a special state embedded in a spectrum of MBL states. The special state is not MBL since it displays logarithmic scaling of the entanglement entropy and of the bipartite fluctuations of particle number with subsystem size. In contrast, the bulk of the spectrum becomes MBL as disorder is introduced. We establish this by studying the entropy as a function of disorder strength and by observing that the level spacing statistics undergoes a transition from Wigner-Dyson to Poisson statistics as the disorder strength is increased.Comment: 8 pages, 7 figure

    Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

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    Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at the Brillouin center only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.Comment: 8 pages, 4 figure

    The Harish-Chandra isomorphism for reductive symmetric superpairs

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    We consider symmetric pairs of Lie superalgebras which are strongly reductive and of even type, and introduce a graded Harish-Chandra homomorphism. We prove that its image is a certain explicit filtered subalgebra of the Weyl invariants on a Cartan subspace whose associated graded is the image of Chevalley's restriction map on symmetric invariants. This generalises results of Harish-Chandra and V. Kac, M. Gorelik.Comment: 43 pages; v2: substantially improved versio

    A Helium-Surface Interaction Potential of Bi2_2Te3_3(111) from Ultrahigh-Resolution Spin-Echo Measurements

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    We have determined an atom-surface interaction potential for the He−-Bi2_2Te3_3(111) system by analysing ultrahigh resolution measurements of selective adsorption resonances. The experimental measurements were obtained using 3^3He spin-echo spectrometry. Following an initial free-particle model analysis, we use elastic close-coupling calculations to obtain a three-dimensional potential. The three-dimensional potential is then further refined based on the experimental data set, giving rise to an optimised potential which fully reproduces the experimental data. Based on this analysis, the He−-Bi2_2Te3_3(111) interaction potential can be described by a corrugated Morse potential with a well depth D=(6.22±0.05) meVD=(6.22\pm0.05)~\mathrm{meV}, a stiffness κ=(0.92±0.01) A˚−1\kappa =(0.92\pm0.01)~\mathrm{\AA}^{-1} and a surface electronic corrugation of (9.6±0.2)(9.6\pm0.2)% of the lattice constant. The improved uncertainties of the atom-surface interaction potential should also enable the use in inelastic close-coupled calculations in order to eventually study the temperature dependence and the line width of selective adsorption resonances

    In-plane magnetic anisotropy of Fe atoms on Bi2_2Se3_3(111)

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    The robustness of the gapless topological surface state hosted by a 3D topological insulator against perturbations of magnetic origin has been the focus of recent investigations. We present a comprehensive study of the magnetic properties of Fe impurities on a prototypical 3D topological insulator Bi2_2Se3_3 using local low temperature scanning tunneling microscopy and integral x-ray magnetic circular dichroism techniques. Single Fe adatoms on the Bi2_2Se3_3 surface, in the coverage range ≈1\approx 1% are heavily relaxed into the surface and exhibit a magnetic easy axis within the surface-plane, contrary to what was assumed in recent investigations on the opening of a gap. Using \textit{ab initio} approaches, we demonstrate that an in-plane easy axis arises from the combination of the crystal field and dynamic hybridization effects.Comment: 5 pages, 3 figures, typos correcte

    Embeddings of SL(2,Z) into the Cremona group

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    Geometric and dynamic properties of embeddings of SL(2,Z) into the Cremona group are studied. Infinitely many non-conjugate embeddings which preserve the type (i.e. which send elliptic, parabolic and hyperbolic elements onto elements of the same type) are provided. The existence of infinitely many non-conjugate elliptic, parabolic and hyperbolic embeddings is also shown. In particular, a group G of automorphisms of a smooth surface S obtained by blowing-up 10 points of the complex projective plane is given. The group G is isomorphic to SL(2,Z), preserves an elliptic curve and all its elements of infinite order are hyperbolic.Comment: to appear in Transformation Group
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