Topological band inversion in HgTe(001): surface and bulk signatures from photoemission

HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its non-trivial band topology

Observation of flat Γ\Gamma moir\'e bands in twisted bilayer WSe2_2

The recent observation of correlated phases in transition metal dichalcogenide moir\'e systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space mapping techniques to study moir\'e superlattice effects in 57.4$^{\circ}$ twisted WSe$_2$ (tWSe$_2$). Our data reveal a split-off flat band that derives from the monolayer $\Gamma$ states. Using advanced data analysis, we directly quantify the moir\'e potential from our data. We further demonstrate that the global valence band maximum in tWSe$_2$ is close in energy to this flat band but derives from the monolayer K-states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that $\Gamma$-valley flat bands might be involved in the correlated physics of twisted WSe$_2$

Flat Gamma Moiré Bands in Twisted Bilayer WSe2 (Source Data)

AbstractSource data of manuscript "Flat Gamma Moiré Bands in Twisted Bilayer WSe2" published in Physical Review Letter

Electronic structure of the highly conductive perovskite oxide SrMoO₃

We use angle-resolved photoemission to map the Fermi surface and quasiparticle dispersion of bulk-like thin films of SrMoO$_3$ grown by pulsed laser deposition. The electronic self-energy deduced from our data reveals weak to moderate correlations in SrMoO$_3$, consistent with our observation of well-defined electronic states over the entire occupied band width. We further introduce spectral function calculations that combine dynamical mean-field theory with an unfolding procedure of density functional calculations and demonstrate good agreement of this approach with our experiments