Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

The relative static dielectric constant ℇr of β-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined in the temperature range from 25 K to 500 K by measuring the AC capacitance of correspondingly oriented plate capacitor structures using test frequencies of up to 1 MHz. This allows a direct quantification of the static dielectric constant and a unique direction assignment of the obtained values. At room temperature, ℇr perpendicular to the planes (100), (010), and (001) amounts to 10.2 ± 0.2, 10.87 ± 0.08, and 12.4 ± 0.4, respectively, which clearly evidence the anisotropy expected for β-Ga2O3 due to its monoclinic crystal structure. An increase of ℇr by about 0.5 with increasing temperature from 25 K to 450 K was found for all orientations. Our ℇr data resolve the inconsistencies in the previously available literature data with regard to absolute values and their directional assignment and therefore provide a reliable basis for the simulation and design of devices. © The Author(s) 2019

Vanadium centers in ZnTe crystals. II. Electron paramagnetic resonance

Four V-related electron-paramagnetic-resonance (EPR) spectra are observed in Bridgman-grown ZnTe doped with vanadium. Two of them are attributed to the charge states VZn3+(A+) and VZn2+(A0) of the isolated V impurity. For the ionized donor, VZn3+(A+), the spectrum reveals the typical behavior of the expected 3A2(F) ground state in tetrahedral symmetry. The incorporation on a cation lattice site could be proved by the resolved superhyperfine interaction with four Te ions. The second spectrum showing triclinic symmetry and S=3/2 is interpreted as the neutral donor state VZn2+(A0). The origin of the triclinic distortion of the cubic (Td) crystal field could be a static Jahn-Teller effect. The two additionally observed EPR spectra are attributed to nearest-neighbor V-related defect pairs. The spectrum of the first one, V2+Zn-YTe, shows trigonal symmetry and can be explained by the S=3/2 manifold of an orbital singlet ground state. An associated defect "YTe" is responsible for the trigonal distortion of the tetrahedral crystal field of V2+Zn. The spectrum of the second pair defect also shows trigonal symmetry and can be described by S=1/2. The ground-state manifold implies a VZn3+−XTe pair as the most probable origin of this spectrum. The S=1/2 ground state is produced by a dominating isotropic exchange interaction coupling the S=1 ground-state manifold of V3+Zn to an assumed S=1/2 ground state of "XTe" in antiferromagnetic orientation. The nature of the associated defects "YTe" and "XTe" remains unknown for both pairs since no hyperfine structure has been observed, but most probably acceptorlike defects are involved

Vanadium centers in ZnTe crystals. I. Optical properties

In ZnTe:V bulk crystals with nominal vanadium concentrations between 1000 and 7000 ppm three vanadium-ion states V+, V2+, and V3+ were found in low-temperature optical measurements. No-phonon lines of the internal emissions were detected for the 5E(D)→5T2(D) transition of V+(d4) at 3401 cm−1 (0.422 eV), for 4T2(F)→4T1(F) of V2+(d3) at 4056 cm−1 (0.503 eV), and for 3T2(F)→3A2(F) of V3+(d2) at 4726 cm−1 (0.586 eV). The energies of the internal transitions are reduced with respect to the corresponding transitions in ZnS:V and ZnSe:V. The respective excitation spectra display, in addition to broad charge-transfer bands, higher excited levels of the individual charge states. Crystal-field calculations of the detected transition energies based on the Tanabe-Sugano scheme are presented. With the help of sensitization experiments, a one-electron model is designed, in which the donor level (V2+/V3+) is situated 12 500 cm−1 (1.55 eV) below the conduction-band edge and the acceptor level (V2+/V+) 9400 cm−1 (1.17 eV) above the valence-band edge. The dynamical behavior of the three infrared lurainescence bands was measured. Decay time constants of 43 μs (V+), 120 μs (V2+), and 420 μs (V3+) were found. Electron-paramagnetic-resonance (EPR) results measured on the same samples are presented in an accompanying paper and confirm the optical detection of isolated substitutional V2+(d3) and V3+(d2) ions. Relations between the EPR and optical results are discussed

Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible

The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of various defects is discussed and attributed to feedstock (concentration of transition metals), growth setup (carbon concentration), or growth process (dislocation density), showing the potential for further optimization. A distinct correlation between crystal defects and bulk carrier lifetime is observed. A bulk carrier lifetime with values up to 600 μs on passivated surfaces of dislocation-free parts of the crystal is currently achieved

Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect

This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) doping in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with defect properties predicted from first-principles calculations. The vibrational frequency shift in two $^{13}C$ enriched samples related to the effect of the isotope mass indicates six distinct configurations of the carbon-containing point defects. The effect of the isotope replacement is well reproduced by the density functional theory (DFT) calculations. Specific attention is paid to the most pronounced defects, namely tri-carbon complexes($C_N=C=C_N$) and carbon substituting for nitrogen $C_N$. The position of the transition level (+/0) in the bandgap found for $C_N=C=C_N$ defects by DFT at 1.1 eV above the valence band maximum, suggest that $(C_N=C=C_N)^+$ provides compensation of ${C_N}^-$. $C_N=C=C_N$ defects are observed to be prominent, yet have high formation energies in DFT calculations. Regarding ${C_N}$ defects, it is shown that the host Ga and N atoms are involved in the defect's delocalized vibrations and significantly affect the isotopic frequency shift. Much more faint vibrational modes are found from di-atomic carbon-carbon and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode intensities of $C_N$, $C_N=C=C_N$, C-H, and $C_N-C_i$ defects in the IR absorption spectra upon irradiation in the defect-related UV/visible absorption range. Finally, it is demonstrated that the resonant enhancement of the Raman process in the range of defect absorption above 2.5 eV enables the detection of defects at carbon doping concentrations as low as $3.2*10^{17} cm^{-3}$

Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

We study the homoepitaxial growth of β-Ga2O3 (100) grown by metal-organic vapour phase as dependent on miscut-angle vs. the c direction. Atomic force microscopy of layers grown on substrates with miscut-angles smaller than 2° reveals the growth proceeding through nucleation and growth of two-dimensional islands. With increasing miscut-angle, step meandering and finally step flow growth take place. While step-flow growth results in layers with high crystalline perfection, independent nucleation of two-dimensional islands causes double positioning on the (100) plane, resulting in twin lamellae and stacking mismatch boundaries. Applying nucleation theory in the mean field approach for vicinal surfaces, we can fit experimentally found values for the density of twin lamellae in epitaxial layers as dependent on the miscut-angle. The model yields a diffusion coefficient for Ga adatoms of D = 7 × 10−9 cm2 s−1 at a growth temperature of 850 °C, two orders of magnitude lower than the values published for GaAs

Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors

The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in AlxGa1-xAs:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect

Human Lin28 forms a high-affinity 1:1 complex with the 106~363 cluster miRNA miR-363

Lin28A is a post-transcriptional regulator of gene expression that interacts with and negatively regulates the biogenesis of let-7 family miRNAs. Recent data suggested that Lin28A also binds the putative tumour suppressor miR-363, a member of the 106~363 cluster of miRNAs. Affinity toward this miRNA and the stoichiometry of the protein-RNA complex are unknown. Characterisation of human Lin28's interaction with RNA has been complicated by difficulties in producing stable RNA-free protein. We have engineered a maltose binding protein fusion with Lin28, which binds let-7 miRNA with a Kd of 54.1 ± 4.2 nM, in agreement with previous data on a murine homologue. We show that human Lin28A binds miR-363 with 1:1 stoichiometry and with similar, if not higher, affinity (Kd = 16.6 ± 1.9 nM). Further analysis suggests that the interaction of the N-terminal cold shock domain of Lin28A with RNA is salt-dependent, supporting a model where the cold shock domain allows the protein to sample RNA substrates through transient electrostatic interactions

Experimental Study of the Shortest Reset Word of Random Automata

In this paper we describe an approach to finding the shortest reset word of a finite synchronizing automaton by using a SAT solver. We use this approach to perform an experimental study of the length of the shortest reset word of a finite synchronizing automaton. The largest automata we considered had 100 states. The results of the experiments allow us to formulate a hypothesis that the length of the shortest reset word of a random finite automaton with $n$ states and 2 input letters with high probability is sublinear with respect to $n$ and can be estimated as $1.95 n^{0.55}.

Baryon Stopping and Charged Particle Distributions in Central Pb+Pb Collisions at 158 GeV per Nucleon

Net proton and negative hadron spectra for central \PbPb collisions at 158 GeV per nucleon at the CERN SPS were measured and compared to spectra from lighter systems. Net baryon distributions were derived from those of net protons, utilizing model calculations of isospin contributions as well as data and model calculations of strange baryon distributions. Stopping (rapidity shift with respect to the beam) and mean transverse momentum \meanpt of net baryons increase with system size. The rapidity density of negative hadrons scales with the number of participant nucleons for nuclear collisions, whereas their \meanpt is independent of system size. The \meanpt dependence upon particle mass and system size is consistent with larger transverse flow velocity at midrapidity for \PbPb compared to \SS central collisions.Comment: This version accepted for publication in PRL. 4 pages, 3 figures. Typos corrected, some paragraphs expanded in response to referee comments, to better explain details of analysi