Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as ultra-low power nonvolatile memory even in aggressively scaled dimensions. A Fe-TFET analytical model is derived by combining the pseudo 2-D Poisson equation and Maxwell’s equation. The model describes the Fe-TFET behavior when a time-dependent voltage is applied to the device with hysteretic output characteristic due to the ferroelectric’s dipole switching. The theoretical results provide unique insights into how device geometry and ferroelectric properties affect the Fe-TFET transfer characteristic. The recently explored ferroelectric, silicon-doped HfO2 is employed as the gate ferroelectric. With the ability to engineer ferroelectricity in HfO2 thin films, a high-K dielectric well established in memory devices, the silicon-doped HfO2 opens a new route for improved manufacturability and scalability of future 1-T ferroelectric memories. In the current research, a Si:HfO2 based Fe-TFET with large memory window and low power dissipation is designed and simulated. Utilizing our presented model, the device characteristics of a Fe-TFET that takes full benefits from Si:HfO2 is compared with the same devices using well-known perovskite ferroelectrics. Finally, the Fe-TFET is compared with a conventional ferroelectric memory transistor highlighting the advantages of using tunneling memory devices

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

Investigation techniques based on tip-enhanced optical effects, capable to yield spatial resolutions down to nanometers level, have enabled a wide palette of important discoveries over the past twenty years. Recently, their underlying optical setups are beginning to emerge as useful tools to modify and manipulate matter with nanoscale spatial resolution. We try to contribute to these efforts by reporting a method that we found viable to modify the surface refractive index of polymethyl methacrylate (PMMA), an acrylic polymer material. The changes in the refractive index are accomplished by focusing a femtosecond pulsed near-infrared laser beam on the apex of a metalized nano-sized tip, traditionally used in scanning probe microscopy (SPM) applications. The adopted illumination strategy yields circular-shaped modifications of the refractive index occurring at the surface of the PMMA sample, exhibiting a lateral size <200 nm, under 790 nm illumination, representing a four-fold increase in precision compared to the current state-of-the-art. The light intensity enhancement effects taking place at the tip apex makes possible achieving refractive index changes at low laser pulse energies (<0.5 nJ), which represents two orders of magnitude advantage over the current state-of-the art. The presented nanoimprinting method is very flexible, as it can be used with different power levels and can potentially be operated with other materials. Besides enabling modifications of the refractive index with high lateral resolution, this method can pave the way towards other important applications such the fabrication of photonic crystal lattices or surface waveguides

Systematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.

Ferromagnetic ordering in a topological insulator can break time-reversal symmetry, realizing dissipationless electronic states in the absence of a magnetic field. The control of the magnetic state is of great importance for future device applications. We provide a detailed systematic study of the magnetic state in highly doped CrxSb2-xTe3 thin films using electrical transport, magneto-optic Kerr effect measurements and terahertz time domain spectroscopy, and also report an efficient electric gating of ferromagnetic order using the electrolyte ionic liquid [DEME][TFSI]. Upon increasing the Cr concentration from x = 0.15 to 0.76, the Curie temperature (Tc) was observed to increase by ~5 times to 176 K. In addition, it was possible to modify the magnetic moment by up to 50% with a gate bias variation of just ±3 V, which corresponds to an increase in carrier density by 50%. Further analysis on a sample with x = 0.76 exhibits a clear insulator-metal transition at Tc, indicating the consistency between the electrical and optical measurements. The direct correlation obtained between the carrier density and ferromagnetism - in both electrostatic and chemical doping - using optical and electrical means strongly suggests a carrier-mediated Ruderman-Kittel-Kasuya-Yoshida (RKKY) coupling scenario. Our low-voltage means of manipulating ferromagnetism, and consistency in optical and electrical measurements provides a way to realize exotic quantum states for spintronic and low energy magneto-electronic device applications

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

This paper presents the design, fabrication, and electrical characterization of a reconfigurable RF capacitive shunt switch that exploits the electro-thermally triggered vanadium dioxide (VO2) insulator to metal phase transition. The RF switch is further exploited to build wide-band RF true-time delay tunable phase shifters. By triggering the VO2 switch insulator to metal transition (IMT), the total capacitance can be reconfigured from the series of two metal-insulator-metal (MIM) capacitors to a single MIM capacitor. The effect of bias voltage on losses and phase shift is investigated, explained, and compared to the state of the art in the field. We report thermal actuation of the devices by heating the devices above VO2 IMT temperature. By cascading multiple stages a maximum of 40° per dB loss close to 7 GHz were obtained

Construction and analysis of tag single nucleotide polymorphism maps for six human-mouse orthologous candidate genes in type 1 diabetes.

BACKGROUND: One strategy to help identify susceptibility genes for complex, multifactorial diseases is to map disease loci in a representative animal model of the disorder. The nonobese diabetic (NOD) mouse is a model for human type 1 diabetes. Linkage and congenic strain analyses have identified several NOD mouse Idd (insulin dependent diabetes) loci, which have been mapped to small chromosome intervals, for which the orthologous regions in the human genome can be identified. Here, we have conducted re-sequencing and association analysis of six orthologous genes identified in NOD Idd loci: NRAMP1/SLC11A1 (orthologous to Nramp1/Slc11a1 in Idd5.2), FRAP1 (orthologous to Frap1 in Idd9.2), 4-1BB/CD137/TNFRSF9 (orthologous to 4-1bb/Cd137/Tnrfrsf9 in Idd9.3), CD101/IGSF2 (orthologous to Cd101/Igsf2 in Idd10), B2M (orthologous to B2m in Idd13) and VAV3 (orthologous to Vav3 in Idd18). RESULTS: Re-sequencing of a total of 110 kb of DNA from 32 or 96 type 1 diabetes cases yielded 220 single nucleotide polymorphisms (SNPs). Sixty-five SNPs, including 54 informative tag SNPs, and a microsatellite were selected and genotyped in up to 1,632 type 1 diabetes families and 1,709 cases and 1,829 controls. CONCLUSION: None of the candidate regions showed evidence of association with type 1 diabetes (P values > 0.2), indicating that common variation in these key candidate genes does not play a major role in type 1 diabetes susceptibility in the European ancestry populations studied.RIGHTS : This article is licensed under the BioMed Central licence at http://www.biomedcentral.com/about/license which is similar to the 'Creative Commons Attribution Licence'. In brief you may : copy, distribute, and display the work; make derivative works; or make commercial use of the work - under the following conditions: the original author must be given credit; for any reuse or distribution, it must be made clear to others what the license terms of this work are

ImageCLEF 2019: Multimedia Retrieval in Lifelogging, Medical, Nature, and Security Applications

This paper presents an overview of the foreseen ImageCLEF 2019 lab that will be organized as part of the Conference and Labs of the Evaluation Forum - CLEF Labs 2019. ImageCLEF is an ongoing evaluation initiative (started in 2003) that promotes the evaluation of technologies for annotation, indexing and retrieval of visual data with the aim of providing information access to large collections of images in various usage scenarios and domains. In 2019, the 17th edition of ImageCLEF will run four main tasks: (i) a Lifelog task (videos, images and other sources) about daily activities understanding, retrieval and summarization, (ii) a Medical task that groups three previous tasks (caption analysis, tuberculosis prediction, and medical visual question answering) with newer data, (iii) a new Coral task about segmenting and labeling collections of coral images for 3D modeling, and (iv) a new Security task addressing the problems of automatically identifying forged content and retrieve hidden information. The strong participation, with over 100 research groups registering and 31 submitting results for the tasks in 2018 shows an important interest in this benchmarking campaign and we expect the new tasks to attract at least as many researchers for 2019