Optical properties of high quality Cu2ZnSnSe4 thin films

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectr

Extended performance solar electric propulsion thrust system study. Volume 4: Thruster technology evaluation

Several thrust system design concepts were evaluated and compared using the specifications of the most advanced 30 cm engineering model thruster as the technology base. Emphasis was placed on relatively high power missions (60 to 100 kW) such as a Halley's comet rendezvous. The extensions in thruster performance required for the Halley's comet mission were defined and alternative thrust system concepts were designed in sufficient detail for comparing mass, efficiency, reliability, structure, and thermal characteristics. Confirmation testing and analysis of thruster and power processing components were performed, and the feasibility of satisfying extended performance requirements was verified. A baseline design was selected from the alternatives considered, and the design analysis and documentation were refined. The baseline thrust system design features modular construction, conventional power processing, and a concentrator solar array concept and is designed to interface with the Space Shuttle

The Hopf modules category and the Hopf equation

We study the Hopf equation which is equivalent to the pentagonal equation, from operator algebras. A FRT type theorem is given and new types of quantum groups are constructed. The key role is played now by the classical Hopf modules category. As an application, a five dimensional noncommutative noncocommutative bialgebra is given.Comment: 30 pages, Letax2e, Comm. Algebra in pres

Optical spectroscopy studies of Cu2ZnSnSe4 thin films

Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor–acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis

Braided racks, Hurwitz actions and Nichols algebras with many cubic relations

We classify Nichols algebras of irreducible Yetter-Drinfeld modules over groups such that the underlying rack is braided and the homogeneous component of degree three of the Nichols algebra satisfies a given inequality. This assumption turns out to be equivalent to a factorization assumption on the Hilbert series. Besides the known Nichols algebras we obtain a new example. Our method is based on a combinatorial invariant of the Hurwitz orbits with respect to the action of the braid group on three strands.Comment: v2: 35 pages, 6 tables, 14 figure

Analysis of InAs/GaAs quantum dot solar cells using Suns-V<inf>oc</inf> measurements

This is the final published version. It first appeared at http://www.sciencedirect.com/science/article/pii/S0927024814003833#.The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.The authors acknowledge financial support from the European Union under the Seventh Framework Programme under a contract for an Integrated Infrastructure Initiative. Reference 312483 – ESTEEM2

Dehydropolymerization of H3B·NMeH2 Using a [Rh(DPEphos)]+ Catalyst : The Promoting Effect of NMeH2

[Rh(κ2-PP-DPEphos){η2η2-H2B(NMe3)(CH2)2tBu}][BArF4] acts as an effective precatalyst for the dehydropolymerization of H3B·NMeH2 to form N-methylpolyaminoborane (H2BNMeH)n. Control of polymer molecular weight is achieved by variation of precatalyst loading (0.1-1 mol %, an inverse relationship) and use of the chain-modifying agent H2: with Mn ranging between 5 500 and 34 900 g/mol and between 1.5 and 1.8. H2 evolution studies (1,2-F2C6H4 solvent) reveal an induction period that gets longer with higher precatalyst loading and complex kinetics with a noninteger order in [Rh]TOTAL. Speciation studies at 10 mol % indicate the initial formation of the amino-borane bridged dimer, [Rh2(κ2-PP-DPEphos)2(μ-H)(μ-H2BN=HMe)][BArF4], followed by the crystallographically characterized amidodiboryl complex [Rh2(cis-κ2-PP-DPEphos)2(σ,μ-(H2B)2NHMe)][BArF4]. Adding ∼2 equiv of NMeH2 in tetrahydrofuran (THF) solution to the precatalyst removes this induction period, pseudo-first-order kinetics are observed, a half-order relationship to [Rh]TOTAL is revealed with regard to dehydrogenation, and polymer molecular weights are increased (e.g., Mn = 40 000 g/mol). Speciation studies suggest that NMeH2 acts to form the precatalysts [Rh(κ2-DPEphos)(NMeH2)2][BArF4] and [Rh(κ2-DPEphos)(H)2(NMeH2)2][BArF4], which were independently synthesized and shown to follow very similar dehydrogenation kinetics, and produce polymers of molecular weight comparable with [Rh(κ2-PP-DPEphos){ η2-H2B(NMe3)(CH2)2tBu}][BArF4], which has been doped with amine. This promoting effect of added amine in situ is shown to be general in other cationic Rh-based systems, and possible mechanistic scenarios are discussed

Auger Recombination in Semiconductor Quantum Wells

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only slightly. The rate of the quasi-threshold Auger process depends on temperature exponentially. However, its threshold energy essentially varies with quantum well width and is close to zero for narrow quantum wells. It is shown that the thresholdless and the quasi-threshold Auger processes dominate in narrow quantum wells, while the threshold and the quasi-threshold processes prevail in wide quantum wells. The limiting case of a three-dimensional (3D)Auger process is reached for infinitely wide quantum wells. The critical quantum well width is found at which the quasi-threshold and threshold Auger processes merge into a single 3D Auger process. Also studied is phonon-assisted Auger recombination in quantum wells. It is shown that for narrow quantum wells the act of phonon emission becomes resonant, which in turn increases substantially the coefficient of phonon-assisted Auger recombination. Conditions are found under which the direct Auger process dominates over the phonon-assisted Auger recombination at various temperatures and quantum well widths.Comment: 38 pages, 7 figure