4,271 research outputs found
Development of a Breeders’ Toolkit for Drought Resistance in a \u3cem\u3eLolium/Festuca\u3c/em\u3e Hybrid
Lolium multiflorum (Lm) is considered an ideal grass for European agriculture. However, existing high-quality forage Lm cultivars have been bred for intensive systems in benign environments, and have proved to be insufficiently robust to meet many of the environmental challenges that face extensive agriculture in more extreme conditions. Genes for persistency, tolerance of cold, drought and poor soils, can be found in currently under-exploited native Festuca ecotypes. These Festuca ecotypes cannot however compare with Lm cultivars for productivity or quality of forage under favourable conditions. Festuca glaucescens (Fg) is of Mediterranean origin and as such is adapted to drought and heat stress. The object of this work was to introgress a single chromosome segment of Fg containing genes for drought resistance into a diploid Lm background. Subsequent to the introgression of a Fg chromosome segment, Fg markers were mapped and a prototype toolkit developed to follow the genes for drought resistance through a breeding programme
Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC
In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as −18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates
The transferability of the low-cost model to long-haul airline operations
Since their emergence in the US in the mid 1970's there has been
significant growth in the low-cost airline sector but with a few notable
exceptions low-cost airlines have operated on short-haul routes. This
paper examines the extent to which the low-cost model is, or could be,
applicable to long-haul operations and whether the recent emergence of
long-haul low-cost carriers is a sustainable phenomenon. The authors
explore the extent to which elements of the so-called low-cost model
might be transferable to long-haul operations. The paper seeks to quantify
the potential cost differentials that might be achievable on a long-haul service. The paper also speculates as to the development and sustainability of the low-cost long-haul operations
Approaches for Associating Molecular Polymorphisms with Phenotypic Traits Based on Linkage Disequilibrium in Natural Populations of \u3cem\u3eLolium Perenne\u3c/em\u3e
Association mapping relies on linkage disequilibrium (LD) between haplotypes and quantitative trait loci (QTL). The level of LD in a genome determines the resolution of this approach. In out-breeding species, LD is expected to decay rapidly, thus allowing for high-resolution mapping. It has been most extensively used in human genetics, but recent work with maize populations has demonstrated its potential in plants (Thornsberry et al., 2001; Wilson et al., 2004), and used in L. perenne to identify AFLP markers associated with a major QTL for heading date on linkage group 7 (Skøt et al., 2004). The objective of the present work is to associate allelic variation in candidate genes for heading date and water soluble carbohydrates (WSC) in natural populations of L. perenne with phenotypic variation. Both these traits are important breeding targets in ryegrass
On the multiplicity of ALMA Compact Array counterparts of far-infrared bright quasars
We present ALMA Atacama Compact Array (ACA) 870 micron continuum maps of 28
infrared-bright SDSS quasars with Herschel/SPIRE detections at redshifts 2-4,
the largest such sample ever observed with ALMA. The ACA detections are centred
on the SDSS coordinates to within 1 arcsec for about 80 per cent of the sample.
Larger offsets indicate that the far-infrared (FIR) emission detected by
Herschel might come from a companion source. The majority of the objects (about
70 per cent) have unique ACA counterparts within the SPIRE beam down to 3-4
arcsec resolution. Only 30 per cent of the sample shows clear evidence for
multiple sources with secondary counterparts contributing to the total 870
micron flux within the SPIRE beam to at least 25 per cent. We discuss the
limitations of the data based on simulated pairs of point-like sources at the
resolution of the ACA and present an extensive comparison of our findings with
recent works on the multiplicities of sub-millimetre galaxies. We conclude
that, despite the coarse resolution of the ACA, our data support the idea that,
for a large fraction of FIR-bright quasars, the sub-mm emission comes from
single sources. Our results suggest that, on average, optically bright quasars
with strong FIR emission are not triggered by early-stage mergers but are,
instead, together with their associated star formation rates, the outcome of
either late-stage mergers or secular processes.Comment: 16 pages, 10 figure
Stellar tracers of the Cygnus Arm. II: A young open cluster in Cam OB3
Cam OB3 is the only defined OB association believed to belong to the Outer
Galactic Arm or Cygnus Arm. Very few members have been observed and the
distance modulus to the association is not well known. We attempt a more
complete description of the population of Cam OB3 and a better determination of
its distance modulus. We present uvby photometry of the area surrounding the
O-type stars BD +56 864 and LS I +57 138, finding a clear sequence of
early-type stars that define an uncatalogued open cluster, which we call
Alicante 1. We also present spectroscopy of stars in this cluster and the
surrounding association. From the spectral types for 18 very likely members of
the association and UBV photometry found in the literature, we derive
individual reddenings, finding a extinction law close to standard and an
average distance modulus DM=13.0+-0.4. This value is in excellent agreement
with the distance modulus to the new cluster Alicante 1 found by fitting the
photometric sequence to the ZAMS. In spite of the presence of several O-type
stars, Alicante 1 is a very sparsely populated open cluster, with an almost
total absence of early B-type stars. Our results definitely confirm Cam OB3 to
be located on the Cygnus Arm and identify the first open cluster known to
belong to the association.Comment: Accepted for publication in Astronomy & Astrophysics. Tables 7 & 8 to
appear only in electronic forma
Considering the impact of situation-specific motivations and constraints in the design of naturally ventilated and hybrid buildings
A simple logical model of the interaction between a building and its occupants is presented based on the principle that if free to do so, people will adjust their posture, clothing or available building controls (windows, blinds, doors, fans, and thermostats) with the aim of achieving or restoring comfort and reducing discomfort. These adjustments are related to building design in two ways: first the freedom to adjust depends on the availability and ease-of-use of control options; second the use of controls affects building comfort and energy performance. Hence it is essential that these interactions are considered in the design process. The model captures occupant use of controls in response to thermal stimuli (too warm, too cold etc.) and non-thermal stimuli (e.g. desire for fresh air). The situation-specific motivations and constraints on control use are represented through trigger temperatures at which control actions occur, motivations are included as negative constraints and incorporated into a single constraint value describing the specifics of each situation. The values of constraints are quantified for a range of existing buildings in Europe and Pakistan. The integration of the model within a design flow is proposed and the impact of different levels of constraints demonstrated. It is proposed that to minimise energy use and maximise comfort in naturally ventilated and hybrid buildings the designer should take the following steps: 1. Provide unconstrained low energy adaptive control options where possible, 2. Avoid problems with indoor air quality which provide motivations for excessive ventilation rates, 3. Incorporate situation-specific adaptive behaviour of occupants in design simulations, 4. Analyse the robustness of designs against variations in patterns of use and climate, and 5. Incorporate appropriate comfort standards into the operational building controls (e.g. BEMS)
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices
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