Ultrahigh Energy Tau Neutrinos

We study ultrahigh energy astrophysical neutrinos and the contribution of tau neutrinos from neutrino oscillations, relative to the contribution of the other flavors. We show the effect of tau neutrino regeneration and tau energy loss as they propagate through the Earth. We consider a variety of neutrino fluxes, such as cosmogenic neutrinos and neutrinos that originate in Active Galactic Nuclei. We discuss signals of tau neutrinos in detectors such as IceCube, RICE and ANITA.Comment: Invited talk given at the ``8th Workshop on Non-Perturbative Quantum Chromodynamics", June 7-11, 2004, Paris, France; 10 pages, 6 figure

Preparation of Cu-based bulk metallic glasses by suction casting

A series of Cu-Hf-Ti alloys prepared by rapid solidification of the melt and by copper mould casting were studied in the present work. Alloy ingots were prepared by arc-melting mixtures of pure metals in an argon atmosphere. An indication of the cooling rate obtained was determined using an Al-4.5 wt%Cu alloy. Cooling rates varied from 540 K/s for the centre section of a 4 mm die to 885 K/s for the outside wall section of the 2 mm die. The glass-forming ability, structure and thermal stability of Cu-Hf-Ti glassy alloys were studied by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and differential thermal analysis (DTA). Bulk glass formation was observed for the Cu64Hf36, Cu55Hf25Ti20 and Cu56Hf25Ti19 alloys, with critical diameters dc for a fully glassy structure of 1, 4 and 5 mm, respectively. The substitution of Hf by Ti increased the glassforming ability (GFA) and the thermal stability

Renormalisation of supersymmetric gauge theory in the uneliminated component formalism

We show that the renormalisation of the N=1 supersymmetric gauge theory when working in the component formalism, without eliminating auxiliary fields and using a standard covariant gauge, requires a non-linear renormalisation of the auxiliary fields.Comment: 9 pages, including 4 figures. Plain TeX. Uses Harvmac and epsf; reference added and minor changes to Introductio

4D STEM: high efficiency phase contrast imaging using a fast pixelated detector

Phase contrast imaging is widely used for imaging beam sensitive and weak phase objects in electron microscopy. In this work we demonstrate the achievement of high efficient phase contrast imaging in STEM using the pnCCD, a fast direct electron pixelated detector, which records the diffraction patterns at every probe position with a speed of 1000 to 4000 frames per second, forming a 4D STEM dataset simultaneously with the incoherent Z-contrast imaging. Ptychographic phase reconstruction has been applied and the obtained complex transmission function reveals the phase of the specimen. The results using GaN and Ti, Nd- doped BiFeO3 show that this imaging mode is especially powerful for imaging light elements in the presence of much heavier elements

Giant planets around two intermediate-mass evolved stars and confirmation of the planetary nature of HIP67851 c

Precision radial velocities are required to discover and characterize planets orbiting nearby stars. Optical and near infrared spectra that exhibit many hundreds of absorption lines can allow the m/s precision levels required for such work. However, this means that studies have generally focused on solar-type dwarf stars. After the main-sequence, intermediate-mass stars (former A-F stars) expand and rotate slower than their progenitors, thus thousands of narrow absorption lines appear in the optical region, permitting the search for planetary Doppler signals in the data for these types of stars. We present the discovery of two giant planets around the intermediate-mass evolved star HIP65891 and HIP107773. The best Keplerian fit to the HIP65891 and HIP107773 radial velocities leads to the following orbital parameters: P=1084.5 d; m$_b$sin$i$ = 6.0 M$_{jup}$; $e$=0.13 and P=144.3 d; m$_b$sin$i$ = 2.0 M$_{jup}$; $e$=0.09, respectively. In addition, we confirm the planetary nature of the outer object orbiting the giant star HIP67851. The orbital parameters of HIP67851c are: P=2131.8 d, m$_c$sin$i$ = 6.0 M$_{jup}$ and $e$=0.17. With masses of 2.5 M$_\odot$ and 2.4 M$_\odot$ HIP65891 and HIP107773 are two of the most massive stars known to host planets. Additionally, HIP67851 is one of five giant stars that are known to host a planetary system having a close-in planet ($a <$ 0.7 AU). Based on the evolutionary states of those five stars, we conclude that close-in planets do exist in multiple systems around subgiants and slightly evolved giants stars, but probably they are subsequently destroyed by the stellar envelope during the ascent of the red giant branch phase. As a consequence, planetary systems with close-in objects are not found around horizontal branch stars.Comment: Accepted for publication in A&

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers