856 research outputs found
Rectangular Beads from the Final Gravettian Level of the Abri Pataud: Raw Material Identification and its Archaeological Implications
The Final Gravettian level (level 2) of the abri Pataud (Dordogne, France) yielded a large assemblage of body ornaments that consists essentially of 85 quite standardized rectangular beads. Some uncertainty remained about the raw material in which these small beads were made: mammoth ivory, reindeer antler or bone? Non-invasive methods were employed in order to determine the raw material. First chemical analyses using microbeam Proton Induced X-ray Emission analysis (microPIXE) did not enable us to conclude definitively. Therefore, synchrotron and laboratory X-ray microtomography (microCT) were applied on eight beads and allowed us to identify ivory for all of them except for one, which shows slightly different morphological features.Le niveau 2 (Gravettien final) de l’abri Pataud (Dordogne, France) a livré un nombre important d’éléments de parure. L’essentiel (n : 85) correspond à des perles rectangulaires assez standardisées. Certaines incertitudes demeuraient sur leur matière première : ivoire de mammouth, bois de renne ou os ? Des méthodes non-invasives ont alors été employées pour déterminer la nature précise de celles-ci. Les analyses élémentaires par spectrométrie d’émission X induite par particules (PIXE) n’ayant pas été concluantes, la microtomographie de rayons X en laboratoire et au synchrotron a été utilisée sur huit perles et a permis d’identifier le matériau comme étant de l’ivoire, excepté pour l’une d’entre elles qui présente quelques légères différences de structure
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Near-field interference map due to a dipolar emission near the edge of a monocrystalline gold platelet
Point source excitation and point detection in the near-field provides new perspective to study the near-field optical phenomena of plasmonic nanostructures. Using the automated dual-tip scanning near-field optical microscope (SNOM), we have measured the optical near-field response of a dipolar emission near the edge of a monocrystalline gold platelet. The image dipole method was used to analytically calculate the interference pattern due to surface plasmon polaritons excited at the position of aperture tip and those reflected from edges of the gold platelet. The near-field enhancement was observed on the edges of the gold platelet. Our results verify that automated dual-tip SNOM is an intriguing technique for quantum plasmonic studies where deterministic coupling of quantum emitters and the detection of the near-field enhancement are of great interest
Dual-channel spontaneous emission of quantum dots in magnetic metamaterials
Metamaterials, artificial electromagnetic media realized by subwavelength nano-structuring, have become a paradigm for engineering electromagnetic space, allowing for independent control of both electric and magnetic responses of the material. Whereas mo
Silicon Mie Resonators for Highly Directional Light Emission from monolayer MoS2
Controlling light emission from quantum emitters has important applications
ranging from solid-state lighting and displays to nanoscale single-photon
sources. Optical antennas have emerged as promising tools to achieve such
control right at the location of the emitter, without the need for bulky,
external optics. Semiconductor nanoantennas are particularly practical for this
purpose because simple geometries, such as wires and spheres, support multiple,
degenerate optical resonances. Here, we start by modifying Mie scattering
theory developed for plane wave illumination to describe scattering of dipole
emission. We then use this theory and experiments to demonstrate several
pathways to achieve control over the directionality, polarization state, and
spectral emission that rely on a coherent coupling of an emitting dipole to
optical resonances of a Si nanowire. A forward-to-backward ratio of 20 was
demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2
by optically coupling it to a Si nanowire
The First Detections of the Extragalactic Background Light at 3000, 5500, and 8000A (II): Measurement of Foreground Zodiacal Light
We present a measurement of the absolute surface brightness of the zodiacal
light (3900-5100A) toward a fixed extragalactic target at high ecliptic
latitude based on moderate resolution (~1.3A per pixel) spectrophotometry
obtained with the du Pont 2.5m telescope at Las Campanas Observatory in Chile.
This measurement and contemporaneous Hubble Space Telescope data from WFPC2 and
FOS comprise a coordinated program to measure the mean flux of the diffuse
extragalactic background light (EBL). The zodiacal light at optical wavelengths
results from scattering by interplanetary dust, so that the zodiacal light flux
toward any extragalactic target varies seasonally with the position of the
Earth. This measurement of zodiacal light is therefore relevant to the specific
observations (date and target field) under discussion. To obtain this result,
we have developed a technique that uses the strength of the zodiacal Fraunhofer
lines to identify the absolute flux of the zodiacal light in the
multiple-component night sky spectrum. Statistical uncertainties in the result
are 0.6% (1 sigma). However, the dominant source of uncertainty is systematic
errors, which we estimate to be 1.1% (1 sigma). We discuss the contributions
included in this estimate explicitly. The systematic errors in this result
contribute 25% in quadrature to the final error in our coordinated EBL
measurement, which is presented in the first paper of this series.Comment: Accepted for publication in ApJ, 22 pages using emulateapj.sty,
version with higher resolution figures available at
http://www.astro.lsa.umich.edu/~rab/publications.html or at
http://nedwww.ipac.caltech.edu/level5/Sep01/Bernstein2/frames.htm
Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (λ = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large number of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis for the defect-based engineering of the electronic and optical properties of TMDs for device applications
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