58 research outputs found
Low-Temperature Hall Effect in Substituted Sr2RuO4
We report the results of a study of the Hall effect and magnetoresistance in
single crystals of Sr2RuO4 in which Sr^(2+) has been substituted by La^(3+)
(Sr(2-y)La(y)RuO(4)) or Ru^(4+) by Ti^(4+) (Sr(2)Ru(1-x)Ti(x)O(4)). For undoped
Sr2RuO4, the purity is so high that the strong-field Hall coefficient can be
measured for fields above 4 T. The conventional weak-field Hall coefficient as
a function of doping shows a sharp jump and sign change at y ~ 0.01 that is
unrelated to either a sharp change in Fermi-surface topography or a magnetic
instability. The implications of these results are discussed.Comment: 5 pages, 4 figure
Dark Energy and Projective Symmetry
Nurowski [arXiv:1003.1503] has recently suggested a link between the
observation of Dark Energy in cosmology and the projective equivalence of
certain Friedman-Lemaitre-Robertson-Walker (FLRW) metrics. Specifically, he
points out that two FLRW metrics with the same unparameterized geodesics have
their energy densities differing by a constant. From this he queries whether
the existence of dark energy is meaningful. We point out that physical
observables in cosmology are not projectively invariant and we relate the
projective symmetry uncovered by Nurowski to some previous work on projective
equivalence in cosmology
Spin Glass Behavior in RuSr2Gd1.5Ce0.5Cu2O10
The dynamics of the magnetic properties of polycrystalline
RuSr2Gd1.5Ce0.5Cu2O10 (Ru-1222) have been studied by ac susceptibility and dc
magnetization measurements, including relaxation and ageing studies. Ru-1222 is
a reported magneto-superconductor with Ru spins magnetic ordering at
temperatures near 100 K and superconductivity in Cu-O2 planes below Tc ~ 40 K.
The exact nature of Ru spins magnetic ordering is still debated and no
conclusion has been reached yet. In this work, a frequency-dependent cusp was
observed in ac susceptibility vs. T measurements, which is interpreted as a
spin glass transition. The change in the cusp position with frequency follows
the Vogel-Fulcher law, which is commonly accepted to describe a spin glass with
magnetically interacting clusters. Such interpretation is supported by
themoremanaent magnetization (TRM) measurements at T = 60 K. TRM relaxations
are well described by a stretched exponential relation, and present significant
ageing effects.Comment: 4 pages, 6 figures, submitted to Phys. Rev.
Localization corrections to the anomalous Hall effect in a ferromagnet
We calculate the localization corrections to the anomalous Hall conductivity
related to the contribution of spin-orbit scattering into the current vertex
(side-jump mechanism). We show that in contrast to the ordinary Hall effect,
there exists a nonvanishing localization correction to the anomalous Hall
resistivity. The correction to the anomalous Hall conductivity vanishes in the
case of side-jump mechanism, but is nonzero for the skew scattering. The total
correction to the nondiagonal conductivity related to both mechanisms, does not
compensate the correction to the diagonal conductivity.Comment: 7 pages with 7 figure
Two-dimensional numerical simulation of the pulse response of a semi-insulating InGaAs:Fe photodetector
A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. The simulation uses a two-dimensional, drift/diffusion calculation and includes external circuit elements. Realistic conditions are considered where the semi-insulating material is represented by a two-level compensation model with Fe as a deep acceptor and hole trap that compensates shallow n-type impurities. The calculated results are compared directly with experimental ones for micron-scale devices described in the literature. The calculation gives a microscopic picture of how trapping controls particularly the falling side of the transient response, and it also shows how the measured performance of the device can reflect the influence of typical external circuit elements.NRC publication: Ye
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