58 research outputs found

    Low-Temperature Hall Effect in Substituted Sr2RuO4

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    We report the results of a study of the Hall effect and magnetoresistance in single crystals of Sr2RuO4 in which Sr^(2+) has been substituted by La^(3+) (Sr(2-y)La(y)RuO(4)) or Ru^(4+) by Ti^(4+) (Sr(2)Ru(1-x)Ti(x)O(4)). For undoped Sr2RuO4, the purity is so high that the strong-field Hall coefficient can be measured for fields above 4 T. The conventional weak-field Hall coefficient as a function of doping shows a sharp jump and sign change at y ~ 0.01 that is unrelated to either a sharp change in Fermi-surface topography or a magnetic instability. The implications of these results are discussed.Comment: 5 pages, 4 figure

    Dark Energy and Projective Symmetry

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    Nurowski [arXiv:1003.1503] has recently suggested a link between the observation of Dark Energy in cosmology and the projective equivalence of certain Friedman-Lemaitre-Robertson-Walker (FLRW) metrics. Specifically, he points out that two FLRW metrics with the same unparameterized geodesics have their energy densities differing by a constant. From this he queries whether the existence of dark energy is meaningful. We point out that physical observables in cosmology are not projectively invariant and we relate the projective symmetry uncovered by Nurowski to some previous work on projective equivalence in cosmology

    Spin Glass Behavior in RuSr2Gd1.5Ce0.5Cu2O10

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    The dynamics of the magnetic properties of polycrystalline RuSr2Gd1.5Ce0.5Cu2O10 (Ru-1222) have been studied by ac susceptibility and dc magnetization measurements, including relaxation and ageing studies. Ru-1222 is a reported magneto-superconductor with Ru spins magnetic ordering at temperatures near 100 K and superconductivity in Cu-O2 planes below Tc ~ 40 K. The exact nature of Ru spins magnetic ordering is still debated and no conclusion has been reached yet. In this work, a frequency-dependent cusp was observed in ac susceptibility vs. T measurements, which is interpreted as a spin glass transition. The change in the cusp position with frequency follows the Vogel-Fulcher law, which is commonly accepted to describe a spin glass with magnetically interacting clusters. Such interpretation is supported by themoremanaent magnetization (TRM) measurements at T = 60 K. TRM relaxations are well described by a stretched exponential relation, and present significant ageing effects.Comment: 4 pages, 6 figures, submitted to Phys. Rev.

    Localization corrections to the anomalous Hall effect in a ferromagnet

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    We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in the case of side-jump mechanism, but is nonzero for the skew scattering. The total correction to the nondiagonal conductivity related to both mechanisms, does not compensate the correction to the diagonal conductivity.Comment: 7 pages with 7 figure

    Two-dimensional numerical simulation of the pulse response of a semi-insulating InGaAs:Fe photodetector

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    A calculation is described of the transient pulse response of a planar metal-semiconductor-metal photodetector consisting of Schottky contacts made to an active layer of semi-insulating InGaAs:Fe that is supported on an InP:Fe substrate. The simulation uses a two-dimensional, drift/diffusion calculation and includes external circuit elements. Realistic conditions are considered where the semi-insulating material is represented by a two-level compensation model with Fe as a deep acceptor and hole trap that compensates shallow n-type impurities. The calculated results are compared directly with experimental ones for micron-scale devices described in the literature. The calculation gives a microscopic picture of how trapping controls particularly the falling side of the transient response, and it also shows how the measured performance of the device can reflect the influence of typical external circuit elements.NRC publication: Ye
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