Center and representations of infinitesimal Hecke algebras of sl_2

In this paper, we compute the center of the infinitesimal Hecke algebras Hz associated to sl_2 ; then using nontriviality of the center, we study representations of these algebras in the framework of the BGG category O. We also discuss central elements in infinitesimal Hecke algebras over gl(n) and sp(2n) for all n. We end by proving an analogue of the theorem of Duflo for Hz.Comment: Final form, to appear in "Communications in Algebra"; 35 pages, laTe

Morphological instability, evolution, and scaling in strained epitaxial films: An amplitude equation analysis of the phase field crystal model

Morphological properties of strained epitaxial films are examined through a mesoscopic approach developed to incorporate both the film crystalline structure and standard continuum theory. Film surface profiles and properties, such as surface energy, liquid-solid miscibility gap and interface thickness, are determined as a function of misfit strains and film elastic modulus. We analyze the stress-driven instability of film surface morphology that leads to the formation of strained islands. We find a universal scaling relationship between the island size and misfit strain which shows a crossover from the well-known continuum elasticity result at the weak strain to a behavior governed by a "perfect" lattice relaxation condition. The strain at which the crossover occurs is shown to be a function of liquid-solid interfacial thickness, and an asymmetry between tensile and compressive strains is observed. The film instability is found to be accompanied by mode coupling of the complex amplitudes of the surface morphological profile, a factor associated with the crystalline nature of the strained film but absent in conventional continuum theory.Comment: 16 pages, 10 figures; to be published in Phys. Rev.

Comparing Segmentation by Time and by Motion in Visual Search: An fMRI Investigation

Abstract Brain activity was recorded while participants engaged in a difficult visual search task for a target defined by the spatial configuration of its component elements. The search displays were segmented by time (a preview then a search display), by motion, or were unsegmented. A preparatory network showed activity to the preview display, in the time but not in the motion segmentation condition. A region of the precuneus showed (i) higher activation when displays were segmented by time or by motion, and (ii) correlated activity with larger segmentation benefits behaviorally, regardless of the cue. Additionally, the results revealed that success in temporal segmentation was correlated with reduced activation in early visual areas, including V1. The results depict partially overlapping brain networks for segmentation in search by time and motion, with both cue-independent and cue-specific mechanisms.</jats:p

Characterization of qutrit channels in terms of their covariance and symmetry properties

We characterize the completely positive trace-preserving maps on qutrits (qutrit channels) according to their covariance and symmetry properties. Both discrete and continuous groups are considered. It is shown how each symmetry group restricts arbitrariness in the parameters of the channel to a very small set. Although the explicit examples are related to qutrit channels, the formalism is sufficiently general to be applied to qudit channels

Non-linear Microwave Surface Impedance of Epitaxial HTS Thin Films in Low DC Magnetic Fields

We have carried out non-linear microwave (8 GHz) surface impedance measurements of three YBaCuO thin films in dc magnetic fields $H_{dc}$ (parallel to c axis) up to 12 mT using a coplanar resonator technique. In zero dc field the three films, deposited by the same method, show a spread of low-power residual surface resistance, $R_{res}$ and penetration depth, $\lambda$ (T=15 K) within a factor of 1.9. However, they exhibit dramatically different microwave field, $H_{rf}$ dependences of the surface resistance, $R_s$, but universal $X_s(H_{rf})$ dependence. Application of a dc field was found to affect not only absolute values of $R_s$ and $X_s$, but the functional dependences $R_s(H_{rf})$ and $X_s(H_{rf})$ as well. For some of the samples the dc field was found to decrease $R_s$ below its zero-field low-power value.Comment: 4 pages, 4 figures. To be published in IEEE Trans. Appl. Supercond., June 199

SN2002kg -- the brightening of LBV V37 in NGC 2403

SN2002kg is a type IIn supernova, detected in October 2002 in the nearby spiral galaxy NGC 2403. We show that the position of SN2002kg agrees within the errors with the position of the LBV V37. Ground based and HST ACS images however show that V37 is still present after the SN2002kg event. We compiled a lightcurve of V37 which underlines the variablity of the object, and shows that SN2002kg was the brightening of V37 and not a supernova. The recent brightening is not a giant eruption, but more likely part of an S Dor phase. V37 shows strong Halpha +[NII] emission in recent images and in the SN2002kg spectrum, which we interprete as the signature of the presence of an LBV nebula. A historic spectrum lacks emission, which may hint that we are witnessing the formation of an LBV nebula.Comment: 4 pages, 5 figures, accepted in A&A Letter, paper with images in full resolution at http://www.astro.ruhr-uni-bochum.de/kweis/publications.htm

On the He II Emission In Eta Carinae and the Origin of Its Spectroscopic Events

We describe and analyze Hubble Space Telescope (HST) observations of transient emission near 4680 {\AA} in Eta Car, reported earlier by Steiner & Damineli (2004). If, as seems probable, this is He II $\lambda$4687, then it is a unique clue to Eta Car's 5.5-year cycle. According to our analysis, several aspects of this feature support a mass-ejection model of the observed spectroscopic events, and not an eclipse model. The He II emission appeared in early 2003, grew to a brief maximum during the 2003.5 spectroscopic event, and then abruptly disappeared. It did not appear in any other HST spectra before or after the event. The peak brightness was larger than previously reported, and is difficult to explain even if one allows for an uncertainty factor of order 3. The stellar wind must provide a temporary larger-than-normal energy supply, and we describe a special form of radiative amplification that may also be needed. These characteristics are consistent with a class of mass-ejection or wind-disturbance scenarios, which have implications for the physical structure and stability of Eta Car.Comment: 47 pages (including all appendices, tabs, & figs), 9 figures, 3 tables; submitted to Astrophysical Journal (2005 March 29), accepted for publication in Ap

Evaluating the Impact of Florida's "Stand Your Ground" Self-defense Law on Homicide and Suicide by Firearm: An Interrupted Time Series Study.

Importance: In 2005, Florida amended its self-defense laws to provide legal immunity to individuals using lethal force in self-defense. The enactment of "stand your ground" laws in the United States has been controversial and their effect on rates of homicide and homicide by firearm is uncertain. Objective: To estimate the impact of Florida's stand your ground law on rates of homicide and homicide by firearm. Design, Setting, and Participants: Using an interrupted time series design, we analyzed monthly rates of homicide and homicide by firearm in Florida between 1999 and 2014. Data were collected from the Wide-ranging Online Data for Epidemiologic Research (WONDER) web portal at the Centers for Disease Control and Prevention. We used seasonally adjusted segmented Poisson regression models to assess whether the onset of the law was associated with changes in the underlying trends for homicide and homicide by firearm in Florida. We also assessed the association using comparison states without stand your ground laws (New York, New Jersey, Ohio, and Virginia) and control outcomes (all suicides and suicides by firearm in Florida). October 1, 2005, the effective date of the law, was used to define homicides before and after the change. Main Outcomes and Measures: Monthly rates of homicide, firearm-related homicide, suicide, and suicide by firearm in Florida and the 4 comparison states. Results: Prior to the stand your ground law, the mean monthly homicide rate in Florida was 0.49 deaths per 100 000 (mean monthly count, 81.93), and the rate of homicide by firearm was 0.29 deaths per 100 000 (mean monthly count, 49.06). Both rates had an underlying trend of 0.1% decrease per month. After accounting for underlying trends, these results estimate that after the law took effect there was an abrupt and sustained increase in the monthly homicide rate of 24.4% (relative risk [RR], 1.24; 95%CI, 1.16-1.33) and in the rate of homicide by firearm of 31.6% (RR, 1.32; 95% CI, 1.21-1.44). No evidence of change was found in the analyses of comparison states for either homicide (RR, 1.06; 95% CI, 0.98-1.13) or homicide by firearm (RR, 1.08; 95% CI, 0.99-1.17). Furthermore, no changes were observed in control outcomes such as suicide (RR, 0.99; 95% CI, 0.94-1.05) and suicide by firearm (RR, 0.98; 95% CI, 0.91-1.06) in Florida between 2005 and 2014. Conclusions and Relevance: The implementation of Florida's stand your ground self-defense law was associated with a significant increase in homicides and homicides by firearm but no change in rates of suicide or suicide by firearm

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices