Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an ‘InSb-like’ interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 µm × 2 µm scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 µm at 77 K has been demonstrated with a dark-current level of 8.3 × 10−8 A/cm2 at −50 mV and a residual carrier concentration of 9.7 × 1014 cm−3, comparable to the state-of-the-art

Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon

Strongly coupled slow-light polaritons in one-dimensional disordered localized states

Cavity quantum electrodynamics advances the coherent control of a single quantum emitter with a quantized radiation field mode, typically piecewise engineered for the highest finesse and confinement in the cavity field. This enables the possibility of strong coupling for chip-scale quantum processing, but till now is limited to few research groups that can achieve the precision and deterministic requirements for these polariton states. Here we observe for the first time coherent polariton states of strong coupled single quantum dot excitons in inherently disordered one-dimensional localized modes in slow-light photonic crystals. Large vacuum Rabi splittings up to 311.μeV are observed, one of the largest avoided crossings in the solid-state. Our tight-binding models with quantum impurities detail these strong localized polaritons, spanning different disorder strengths, complementary to model-extracted pure dephasing and incoherent pumping rates. Such disorder-induced slow-light polaritons provide a platform towards coherent control, collective interactions, and quantum information processing

Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors

A 1.3 {micro}m wavelength vertical-cavity surface-emitting laser (VCSEL) containing proton implanted isolation regions and a dielectric top mirror and a wafer-bonded GaAs/AlAs bottom mirror was fabricated. A room temperature pulsed threshold current density of 1.13 kA/cm{sup 2} and a threshold current of 2 mA have been demonstrated

Application of advanced (S)TEM methods for the study of nanostructured porous functional surfaces: A few working examples

Nanostructured films offer the ability of modifying surface properties, even more, when they can generate layers with controlled porosity. The lower implicit integrity of these (multi)layers when compared to their compact counterparts, hinders the attainment of electron-transparent sections of submicron thicknesses (lamellae), which becomes one of the main reason for the scarcity of studies thorough (scanning-)transmission electron microscopy ((S)TEM). Aware of this opportunity, this report provides an overview of the possibilities offered by the application of a variety of (S)TEM techniques for the study of nanostructured and porous photonic surfaces. A few working examples are presented to illustrate the type of information that can be obtained in the case of mesoporous films prepared either by at oblique angles physical processes as well as nitride nanowire arrays prepared by epitaxy methods. It will be demonstrated that this approach enables the realization of several pioneering works, which are essential to complete the characterization of such porosity-controlled coatings. Topics as diverse as the preparation of electron-transparent specimens and the advanced characterization of their structures, morphologies, interfaces and compositions are addressed thanks to the implementation of new breakthroughs in (S)TEM, which allow to obtain high-resolution imaging, spectroscopies, or tomography, at both microscopic and nanoscopic levels. Finally, establishing (S)TEM as a reference tool for the advanced structural, chemical and morphological characterization of porous nanostructured skins, will open new horizons, providing better and new insights and thus allowing the optimization of the fabrication and design of such architectures

Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs) is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission

Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

An atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs). Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands