Ultracompact Adiabatic Bi-sectional Tapered Coupler for the Si/III-V Heterogeneous Integration

An ultracompact bi-sectional adiabatic tapered coupler, which is suitable for an adiabatic mode transformation between a common single mode SOI wire waveguide and a Si/III-V hybrid waveguide, are proposed for Si/III-V heterogeneous integration. Since the bi-sectional tapered coupler mimics a semi-3D taper and avoids exciting the unwanted high-order modes in the thick p-InP cladding layer (which is removed in the first tapered section), the length of the adiabatic mode coupler can be dramatically shortened. Taking into account the mask design and the fabrication tolerance, we design the tapered structure only in the III/V structure, while keeping the SOI wire waveguide straight. In the proposed structure, the length of the bi-sectional tapered coupler can be 9.5 {\mu}m with a large fundamental mode-coupling ratio (over 95%) in a bandwidth of ~100 nm, and provides 100 nm tolerance to misalignment, even when the BCB layer is as thick as 50 nm.Comment: 7 pages, 6 figure

Wavelength-multiplexed duplex transceiver based on III-V/Si hybrid integration for off-chip and on-chip optical interconnects

A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 x 0.65 mm(2) for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 mu m long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.5 Gb/s and 40 Gb/s AOWC for both wavelength up and down conversion. (C) 2016 Optical Society of Americ

5 x 20 Gb/s III-V on silicon electroabsorption modulator array heterogeneously integrated with a 1.6nm channel-spacing silicon AWG

We demonstrate a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 1.6nm channel-spacing arrayed-waveguide grating and a 20Gbps electroabsorption modulator array, showing the potential for 100 Gbps capacity on a 1.5x0.5 mm(2) footprint

Individualized prevention of proton pump inhibitor related adverse events by risk stratification

Proton pump inhibitors (PPIs) are commonly used for gastric acid-related disorders, but their safety profile and risk stratification for high-burden diseases need further investigation. Analyzing over 2 million participants from five prospective cohorts from the US, the UK, and China, we found that PPI use correlated with increased risk of 15 leading global diseases, such as ischemic heart disease, diabetes, respiratory infections, and chronic kidney disease. These associations showed dose-response relationships and consistency across different PPI types. PPI-related absolute risks increased with baseline risks, with approximately 82% of cases occurring in those at the upper 40% of the baseline predicted risk, and only 11.5% of cases occurring in individuals at the lower 50% of the baseline risk. While statistical association does not necessarily imply causation, its potential safety concerns suggest that personalized use of PPIs through risk stratification might guide appropriate decision-making for patients, clinicians, and the public

III-V-on-silicon photonic devices for optical communication and sensing

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm