SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training

We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications. The in-plane magnetized SOT (i-SOT) MRAM not only enables field-free magnetization switching with high endurance (> 10^11), but also hosts multiple stable probabilistic states with a low device-to-device variation (< 6.35%). Accordingly, the proposed PBNN outperforms other neural networks by achieving an 18* increase in training speed, while maintaining an accuracy above 97% under the write and read noise perturbations. Furthermore, by applying the binarization process with an additional SOT-MRAM dummy module, we demonstrate an on-chip MNIST inference performance close to the ideal baseline using our SOT-PBNN hardware

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to the different spin transport mechanisms, these two types of nonreciprocal charge transport show opposite polarities with respect to the magnetic field direction, which further enable an effective phase modulation of the angular-dependent magnetoresistance. Besides, the demonstrations of both the tunable UMR response and two-terminal spin-orbit torque-driven magnetization switching validate our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic device design

DEB025 (Alisporivir) Inhibits Hepatitis C Virus Replication by Preventing a Cyclophilin A Induced Cis-Trans Isomerisation in Domain II of NS5A

DEB025/Debio 025 (Alisporivir) is a cyclophilin (Cyp)-binding molecule with potent anti-hepatitis C virus (HCV) activity both in vitro and in vivo. It is currently being evaluated in phase II clinical trials. DEB025 binds to CypA, a peptidyl-prolyl cis-trans isomerase which is a crucial cofactor for HCV replication. Here we report that it was very difficult to select resistant replicons (genotype 1b) to DEB025, requiring an average of 20 weeks (four independent experiments), compared to the typically <2 weeks with protease or polymerase inhibitors. This indicates a high genetic barrier to resistance for DEB025. Mutation D320E in NS5A was the only mutation consistently selected in the replicon genome. This mutation alone conferred a low-level (3.9-fold) resistance. Replacing the NS5A gene (but not the NS5B gene) from the wild type (WT) genome with the corresponding sequence from the DEB025res replicon resulted in transfer of resistance. Cross-resistance with cyclosporine A (CsA) was observed, whereas NS3 protease and NS5B polymerase inhibitors retained WT-activity against DEB025res replicons. Unlike WT, DEB025res replicon replicated efficiently in CypA knock down cells. However, DEB025 disrupted the interaction between CypA and NS5A regardless of whether the NS5A protein was derived from WT or DEB025res replicon. NMR titration experiments with peptides derived from the WT or the DEB025res domain II of NS5A corroborated this observation in a quantitative manner. Interestingly, comparative NMR studies on two 20-mer NS5A peptides that contain D320 or E320 revealed a shift in population between the major and minor conformers. These data suggest that D320E conferred low-level resistance to DEB025 probably by reducing the need for CypA-dependent isomerisation of NS5A. Prolonged DEB025 treatment and multiple genotypic changes may be necessary to generate significant resistance to DEB025, underlying the high barrier to resistance

Sodium Percarbonate Activation by Plasma-Generated Ozone for Catalytic Degradation of Dye Wastewater: Role of Active Species and Degradation Process

In this paper, sodium percarbonate (SPC) was activated by ozone (O3) from plasma for catalytic treatment of dye wastewater. Methyl blue (MB), a typical industrial dye, was selected as the target dye contaminant. Results showed that enhancing O3 dosage and reducing MB concentration were beneficial to MB degradation. Compared to acid condition, a higher removal efficiency of MB was obtained in alkaline condition. With an increase of SPC dosage, the removal efficiency of MB first was raised, and then it declined. Under the optimal dosage of 50 mg/L, the removal efficiency of MB reached 85.7% with 30 min treatment time. The energy efficiency was improved from 5.21 g/kWh to 5.71 g/kWh. A synergetic effect can be established between O3 and SPC. Radical capture experiments verified that ·OH, ·O2−, 1O2, and ·CO3− played important parts in MB degradation. With increasing reaction time, the amount of total organic carbon (TOC) declined and the amount of ammonia nitrogen (NH3-N) increased. The addition of SPC enhanced the solution’s pH value and conductivity. The degradation pathway was proposed based on density functional theory (DFT) analysis and relevant literatures. The toxicity of MB was alleviated after O3/SPC treatment. The O3/SPC process was also suitable for the treatment of other dyes and actual wastewater

Sodium Percarbonate Activation by Plasma-Generated Ozone for Catalytic Degradation of Dye Wastewater: Role of Active Species and Degradation Process

In this paper, sodium percarbonate (SPC) was activated by ozone (O3) from plasma for catalytic treatment of dye wastewater. Methyl blue (MB), a typical industrial dye, was selected as the target dye contaminant. Results showed that enhancing O3 dosage and reducing MB concentration were beneficial to MB degradation. Compared to acid condition, a higher removal efficiency of MB was obtained in alkaline condition. With an increase of SPC dosage, the removal efficiency of MB first was raised, and then it declined. Under the optimal dosage of 50 mg/L, the removal efficiency of MB reached 85.7% with 30 min treatment time. The energy efficiency was improved from 5.21 g/kWh to 5.71 g/kWh. A synergetic effect can be established between O3 and SPC. Radical capture experiments verified that &middot;OH, &middot;O2&minus;, 1O2, and &middot;CO3&minus; played important parts in MB degradation. With increasing reaction time, the amount of total organic carbon (TOC) declined and the amount of ammonia nitrogen (NH3-N) increased. The addition of SPC enhanced the solution&rsquo;s pH value and conductivity. The degradation pathway was proposed based on density functional theory (DFT) analysis and relevant literatures. The toxicity of MB was alleviated after O3/SPC treatment. The O3/SPC process was also suitable for the treatment of other dyes and actual wastewater

Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications

To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness and atomically smooth surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface serves as an effective tuning parameter to tailor the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. Our results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs

Wafer‐scale epitaxial growth of the thickness‐controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications

To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs