Al2O3 Surface Passivation Characterized on Hydrophobic and Hydrophilic c-Si by a Combination of QSSPC, CV, XPS and FTIR

Abstract In this work, the influence of the c-Si surface finishing (hydrophobic/hydrophilic) prior to the deposition of the Al2O3 passivation layer on the passivation quality is investigated. The samples are characterized by a combination of Quasi-Steady-State-PhotoConductance (QSSPC) Capacity-Conductance (CV), X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed InfraRed (FTIR) measurements. Furthermore, FTIR measurements are used to determine the thickness of interfacial SiOx layer

Solar cell process development in the european integrated project crystalclear

CrystalClear is a large integrated project funded by the European Commission that aims to drastically reduce the cost of crystalline Si PV modules, down to 1 Euro/Wp. Among the different subprojects, the one dealing with the development of advanced solar cells is relatively large (with 11 partners out of the 15 Crystal Clear partners taking part) and has a crucial role. The goal of the subproject is to develop cell design concepts and manufacturing processes that would enable a reduction in the order of 40% of the cell processing costs per Wp. In this paper, we give an overview of all the development work that has taken place in the CrystalClear solar cells subproject so far. World class results have been achieved, particularly on high efficiency cells on Si ribbons, and on industrial-type solar cells on very thin (120 (j.m thick) substrates

Aufbau eines Teststandes - einschliesslich Triggersystem, Gasversorgungssystem und Elektronik - zur Untersuchung von Vieldraht-Proportionalkammern mit kosmischen Myonen

SIGLEAvailable from TIB Hannover: ZA 5141(4815) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%

Atomic layer deposition (ALD) of thin Al2O3 (=10¿nm) films is used to improve the rear surface passivation of large-area screen-printed p-type Si passivated emitter and rear cells (PERC). A blister-free stack of Al2O3/SiOx/SiNx is developed, leading to an improved back reflection and a rear recombination current (J0,rear) of 92¿±¿6¿fA/cm2. The Al2O3/SiOx/SiNx stack is blister-free if a 700°C anneal in N2 is performed after the Al2O3 deposition and prior to the SiOx/SiNx capping. A clear relationship between blistering density and lower open-circuit voltage (VOC) due to increased rear contacting area is shown. In case of the blister-free Al2O3/SiOx/SiNx rear surface passivation stack, an average cell efficiency of 19.0% is reached and independently confirmed by FhG-ISE CalLab. Compared with SiOx/SiNx-passivated PERC, there is an obvious gain in VOC and short-circuit current (JSC) of 5¿mV and 0.2¿mA/cm2, respectively, thanks to improved rear surface passivation and rear internal reflection