1,347 research outputs found

    Critical phase of a magnetic hard hexagon model on triangular lattice

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    We introduce a magnetic hard hexagon model with two-body restrictions for configurations of hard hexagons and investigate its critical behavior by using Monte Carlo simulations and a finite size scaling method for discreate values of activity. It turns out that the restrictions bring about a critical phase which the usual hard hexagon model does not have. An upper and a lower critical value of the discrete activity for the critical phase of the newly proposed model are estimated as 4 and 6, respectively.Comment: 11 pages, 8 Postscript figures, uses revtex.st

    A Spin - 3/2 Ising Model on a Square Lattice

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    The spin - 3/2 Ising model on a square lattice is investigated. It is shown that this model is reducible to an eight - vertex model on a surface in the parameter space spanned by coupling constants J, K, L and M. It is shown that this model is equivalent to an exactly solvable free fermion model along two lines in the parameter space.Comment: LaTeX, 7 pages, 1 figure upon request; JETP Letters, in pres

    Extracellular calcification of Braarudosphaera bigelowii deduced from electron microscopic observations of cell surface structure and elemental composition of pentaliths

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    We have performed morphological and crystallographic studies of Braarudosphaera bigelowii using various light and electron microscopy techniques. A study by light microscopy revealed that B. bigelowii has a haptonema, and can use it for adhesion to external substrates. A study of the pentaliths by transmission electron microscopy indicates that the well-known trapezoidal lamina is formed with foliate crystals having perfectly identical crystallographic orientation. A cytological study shows that the pentaliths of B. bigelowii are surrounded by an organic structure consisting of a pentalith-substrate and thin organic layers. The pentalith-substrate underlies the proximal surface of the pentaliths and extends between the sides of the individual pentaliths, it also extends between the five trapezoidal segments forming a pentalith. Thin organic layers, which apparently originate from ridges of pentalith-substrate, cover the distal surface of the trapezoidal segments. The close association between the pentalith-substrate, organic layers, and pentaliths leads us to the hypothesis that calcification of the pentaliths occurs between the pentalith-substrate and organic layers, extracellularly. The relatively high Mg content observed in pentaliths supports our hypothesis of extracellular calcification

    Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

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    Engineering the effective work function of scaled-down devices is commonly achieved by the implementation of capping layers in the gate stack. Typical cap layers are Al2O3 for pMOSFETs and La-oxide or Mg for nMOSFETs. Besides introducing a dipole layer at the SiO2/high-κ interface, the in-diffusion of the metal ions may lead to either passivation or generation of traps in the SiO2/high-κ layer. This paper uses low frequency noise studies to determine the impact of capping layers on the quality of the SiO2/HfO2 gate stacks. The influence on the trap profiles of different types of cap layers, different locations of the cap layer (below or on top of the HfO2 dielectric) and the impact of different thermal budgets, typically used for the fabrication of Dynamic Random Access Memory (DRAM) logic devices, are investigated. The differences between several metal oxides are outlined and discussed

    Global Bethe lattice consideration of the spin-1 Ising model

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    The spin-1 Ising model with bilinear and biquadratic exchange interactions and single-ion crystal field is solved on the Bethe lattice using exact recursion equations. The general procedure of critical properties investigation is discussed and full set of phase diagrams are constructed for both positive and negative biquadratic couplings. In latter case we observe all remarkable features of the model, uncluding doubly-reentrant behavior and ferrimagnetic phase. A comparison with the results of other approximation schemes is done.Comment: Latex, 11 pages, 13 ps figures available upon reques

    Monte Carlo Study of the Anisotropic Heisenberg Antiferromagnet on the Triangular Lattice

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    We report a Monte Carlo study of the classical antiferromagnetic Heisenberg model with easy axis anisotropy on the triangular lattice. Both the free energy cost for long wavelength spin waves as well as for the formation of free vortices are obtained from the spin stiffness and vorticity modulus respectively. Evidence for two distinct Kosterlitz-Thouless types of defect-mediated phase transitions at finite temperatures is presented.Comment: 8 pages, 10 figure

    Density matrix renormalization group for the Berezinskii-Kosterlitz-Thouless transition of the 19-vertex model

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    We embody the density matrix renormalization group (DMRG) method for the 19-vertex model on a square lattice in order to investigate the Berezinskii-Kosterlitz-Thouless transition. Elements of the transfer matrix of the 19-vertex model are classified in terms of the total value of arrows in one layer of the square lattice. By using this classification, we succeed to reduce enormously the dimension of the matrix which has to be diagonalized in the DMRG method. We apply our method to the 19-vertex model with the interaction K=1.0866K=1.0866 and obtain c=1.006(1)c=1.006(1) for the conformal anomaly. PACS. 05.90.+m, 02.70.-cComment: RevTeX style, 20 pages, 12 figure

    Ultrasound Biomicroscopy Comparison of Ab Interno

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    Purpose. To compare ab interno and ab externo scleral fixation of posterior chamber intraocular lenses (PCIOL) using ultrasound biomicroscopy (UBM). Methods. Randomized patients underwent ab externo or ab interno scleral fixation of a PCIOL. Ultrasound biomicroscopy was performed 3 to 6 months postoperatively, to determine PCIOL centration, IOL distance to the iris at 12, 3, 6, and 9 hours, and haptics placement in relation to the ciliary sulcus. Results. Fifteen patients were enrolled in the study. The ab externo technique was used in 7 eyes (46.6%) and the ab interno in 8 eyes (53.3%). In the ab externo technique, 14 haptics were located: 4 (28.57%) in the ciliary sulcus; 2 (14.28%) anterior to the sulcus; and 8 (57.14%) posterior to the sulcus, 6 in the ciliary body and 2 posterior to the ciliary body. In the ab interno group, 4 haptics (25.0%) were in the ciliary sulcus, 2 (12.50%) anterior to the sulcus, and 10 (75.0%) posterior to the sulcus, 4 in the ciliary body and 6 posterior to the ciliary body. Conclusions. Ab externo and ab interno scleral fixation techniques presented similar results in haptic placement. Ab externo technique presented higher vertical tilt when compared to the ab interno

    Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

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    The DC and low-frequency noise performance of an array of 800 parallel Forksheet MOSFETs were investigated by performing measurements over a wide temperature range from 300 K to 4 K. The array structure allowed to measure a representative average performance of the devices and provided a large effective area for 1/f noise analysis. Results showed an improvement in the saturation drain current when going from room temperature to cryogenic temperatures, with the subthreshold swing saturating around 100 K and the threshold voltage shifting by approximately 150 mV, following similar trends observed in Silicon cryogenic electronics. Additionally, the study confirms that the noise at cryogenic temperatures does not follow the commonly assumed linear scaling with temperature. This deviation from the linear scaling has been associated with the presence of tail states at the interface in bulk and silicon-on-insulator (SOI) devices. These results suggest that the excess 1/f noise in this advanced device architecture is not related to the device architecture but rather to the microscopic material properties of semiconductor/dielectric interfaces
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