Trilingual conversations: a window into multicompetence

A recurrent theme in the literature on trilingual language use is the question of whether there is a specific “trilingual competence.” In this paper we consider this question in the light of codeswitching patterns in two dyadic trilingual conversations between a mother and daughter conducted in (Lebanese) Arabic, French, and English. Quantitative and qualitative analysis of codeswitching in both conversants shows that, despite the fact that both subjects are fluent in all three languages, uses of switching are significantly different for mother and daughter across a number of features, including relative frequency of different switch types, and the incidence of hybrid constructions involving items from two or more languages. The subjects appear to display qualitatively distinct profiles of competence in the trilingual mode. This in turn leads to the conclusion that the facts of trilingual language use are best characterized in terms of “multicompetence” (Cook, 1991). The paper concludes with some further reflections on the uniqueness of trilingual language use (an “old chestnut” in trilingualism research, cf. Klein, 1995)

Probing the interaction between solid benzene and water using vacuum ultraviolet and infrared spectroscopy

We present results of a combined vacuum ultravioloet (VUV) and infrared (IR) photoabsorption study of amorphous benzene:water mixtures and layers to investigate the benzene-water interaction in the solid phase. UV spectra of 1:1, 1:10 and 1:100 benzene:water mixtures at 24 K reveal a concentration dependent shift in the energies of the 1B2u, 1B1u and 1E1u electronic states of benzene. All the electronic bands blueshift from pure amorphous benzene towards gas phase energies with increasing water concentration. IR results reveal a strong dOH-π benzene-water interaction via the dangling OH stretch of water with the delocalised π system of the benzene molecule. Although this interaction influences the electronic states of benzene with the benzenewater interaction causing a redshift in the electronic states from that of the free benzene molecule, the benzene-benzene interaction has a more significant effect on the electronic states of benzene. VUV spectra of benzene and water layers show evidence of non-wetting between benzene and water, characterised by Rayleigh scattering tails at wavelengths greater than 220 nm. Our results also show evidence of benzene-water interaction at the benzene-water interface affecting both the benzene and the water electronic states. Annealing the mixtures and layers of benzene and water show that benzene remains trapped within in/under water ice until water desorption near 160 K. These first systematic studies of binary amorphous mixtures in the VUV, supported with complementary IR studies, provide a deeper insight into the influence of intermolecular interactions on intramolecular electronic states with significant implications for our understanding of photochemical processes in more realistic astrochemical environments

Testrun results from prototype fiber detectors for high rate particle tracking

A fiber detector concept has been realized allowing to registrate particles within less than 100 nsec with a space point precision of about 0.1 mm at low occupancy. Three full size prototypes have been build by different producers and tested at a 3 GeV electron beam at DESY. After 3 m of light guides 8-10 photoelectrons were registrated by multichannel photomultipliers providing an efficiency of more than 99%. Using all available data a resolution of 0.086 mm was measured.Comment: 18 pages, 17 figure

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide influence the injection efficiency of holes into the InGaN quantum wells of these devices. In this study, the non-radiative recombination and the diffusivity in the [000-1] direction for charge carriers in such GaN layers are investigated by the photoluminescence of buried InGaN quantum wells, in addition to the GaN photoluminescence. The vertical charge carrier diffusion length and the diffusion constant in GaN were determined by evaluating the intensity from InGaN quantum wells in different depths below a top GaN layer. Additionally, the intensity from the buried InGaN quantum wells was found to be more sensitive to variations in the non-radiative recombination rate in the GaN layer than the intensity from the GaN itself. The study enables conclusions to be drawn on how the growth of a p-side GaN waveguide layer has to be optimized: (1) The charge carrier diffusivity in the [000-1] direction at device operation temperature is limited by phonon scattering and can be only slightly improved by material quality. (2) The use of TMGa (trimethylgallium) instead of TEGa (triethylgallium) as a precursor for the growth of GaN lowers the background silicon doping level and is advantageous for a large hole diffusion length. (3) Small growth rates below 0.5 μm/h when using TMGa or below 0.12 μm/h when using TEGa enhance non-radiative recombination. (4) A V/III gas ratio of 2200 or more is needed for low non-radiative recombination rates in GaN

Strong spin-orbit splitting on Bi surfaces

Using first-principles calculations and angle-resolved photoemission, we show that the spin-orbit interaction leads to a strong splitting of the surface state bands on low-index surfaces of Bi. The dispersion of the states and the corresponding Fermi surfaces are profoundly modified in the whole surface Brillouin zone. We discuss the implications of these findings with respect to a proposed surface charge density wave on Bi(111) as well as to the surface screening, surface spin-density waves, electron (hole) dynamics in surface states, and to possible applications to the spintronics.Comment: 4 pages 2 figure