Serum Bovine Immunoglobulins Improve Inflammation and Gut Barrier Function in Persons with HIV and Enteropathy on Suppressive ART.

BackgroundSystemic inflammation persists in chronic HIV infection and is associated with increased rates of non-AIDS events such as cardiovascular and liver disease. Increased gut permeability and systemic exposure to microbial products are key drivers of this inflammation. Serum-derived bovine immunoglobulin/protein isolate (SBI) supports gut healing in other conditions such as inflammatory bowel disease.MethodsIn this randomized, double-blind study, participants receiving suppressive antiretroviral therapy (ART) with chronic diarrhea received placebo or SBI at 2.5 g BID or 5 g BID for 4 weeks, followed by a 20-week placebo-free extension phase with SBI at either 2.5 or 5 g BID. Intestinal fatty acid binding protein (I-FABP), zonulin, flagellin, lipopolysaccharide (LPS) and LPS-binding protein, and inflammatory markers were measured by ELISA or multiplex assays. Non-parametric tests were used for analysis.ResultsOne hundred three participants completed the study. By week 24 SBI significantly decreased circulating levels of I-FABP (-0.35 ng/μL, P=0.002) and zonulin (-4.90 ng/μL, P=0.003), suggesting improvement in gut damage, and interleukin-6 (IL-6) (-0.40 pg/μL, P=0.002), reflecting improvement in systemic inflammation. In participants with the lowest quartile of CD4+ T-cell counts at baseline (189-418 cells/μL), CD4+ T-cell counts increased significantly (26 cells/μL; P=0.002).ConclusionsOral SBI may decrease inflammation and warrants further exploration as a potential strategy to improve gut integrity and decrease systemic inflammation among persons receiving prolonged suppressive ART

Near-infrared Spectral Characterization of Solar-type Stars in the Northern Hemisphere

Although solar-analog stars have been studied extensively over the past few decades, most of these studies have focused on visible wavelengths, especially those identifying solar-analog stars to be used as calibration tools for observations. As a result, there is a dearth of well-characterized solar analogs for observations in the near-infrared, a wavelength range important for studying solar system objects. We present 184 stars selected based on solar-like spectral type and V-J and V-K colors whose spectra we have observed in the 0.8-4.2 micron range for calibrating our asteroid observations. Each star has been classified into one of three ranks based on spectral resemblance to vetted solar analogs. Of our set of 184 stars, we report 145 as reliable solar-analog stars, 21 as solar analogs usable after spectral corrections with low-order polynomial fitting, and 18 as unsuitable for use as calibration standards owing to spectral shape, variability, or features at low to medium resolution. We conclude that all but 5 of our candidates are reliable solar analogs in the longer wavelength range from 2.5 to 4.2 microns. The average colors of the stars classified as reliable or usable solar analogs are V-J=1.148, V-H=1.418, and V-K=1.491, with the entire set being distributed fairly uniformly in R.A. across the sky between -27 and +67 degrees in decl.Comment: 19 pages, 8 figures, 2 table

Towards More Precise Survey Photometry for PanSTARRS and LSST: Measuring Directly the Optical Transmission Spectrum of the Atmosphere

Motivated by the recognition that variation in the optical transmission of the atmosphere is probably the main limitation to the precision of ground-based CCD measurements of celestial fluxes, we review the physical processes that attenuate the passage of light through the Earth's atmosphere. The next generation of astronomical surveys, such as PanSTARRS and LSST, will greatly benefit from dedicated apparatus to obtain atmospheric transmission data that can be associated with each survey image. We review and compare various approaches to this measurement problem, including photometry, spectroscopy, and LIDAR. In conjunction with careful measurements of instrumental throughput, atmospheric transmission measurements should allow next-generation imaging surveys to produce photometry of unprecedented precision. Our primary concerns are the real-time determination of aerosol scattering and absorption by water along the line of sight, both of which can vary over the course of a night's observations.Comment: 41 pages, 14 figures. Accepted PAS

Probing interface defects in top-gated MoS2 transistors with impedance spectroscopy

The electronic properties of the HfO2/MoS2 interface were investigated using multifrequency capacitance–voltage (C–V) and current–voltage characterization of top-gated MoS2 metal–oxide–semiconductor field effect transistors (MOSFETs). The analysis was performed on few layer (5–10) MoS2 MOSFETs fabricated using photolithographic patterning with 13 and 8 nm HfO2 gate oxide layers formed by atomic layer deposition after in-situ UV-O3 surface functionalization. The impedance response of the HfO2/MoS2 gate stack indicates the existence of specific defects at the interface, which exhibited either a frequency-dependent distortion similar to conventional Si MOSFETs with unpassivated silicon dangling bonds or a frequency dispersion over the entire voltage range corresponding to depletion of the HfO2/MoS2 surface, consistent with interface traps distributed over a range of energy levels. The interface defects density (Dit) was extracted from the C–V responses by the high–low frequency and the multiple-frequency extraction methods, where a Dit peak value of 1.2 × 1013 cm–2 eV–1 was extracted for a device (7-layer MoS2 and 13 nm HfO2) exhibiting a behavior approximating to a single trap response. The MoS2 MOSFET with 4-layer MoS2 and 8 nm HfO2 gave Dit values ranging from 2 × 1011 to 2 × 1013 cm–2 eV–1 across the energy range corresponding to depletion near the HfO2/MoS2 interface. The gate current was below 10–7 A/cm2 across the full bias sweep for both samples indicating continuous HfO2 films resulting from the combined UV ozone and HfO2 deposition process. The results demonstrated that impedance spectroscopy applied to relatively simple top-gated transistor test structures provides an approach to investigate electrically active defects at the HfO2/MoS2 interface and should be applicable to alternative TMD materials, surface treatments, and gate oxides as an interface defect metrology tool in the development of TMD-based MOSFETs

Impact of etch processes on the chemistry and surface states of the topological insulator Bi2Se3

The unique properties of topological insulators such as Bi2Se3 are intriguing for their potential implementation in novel device architectures for low power and defect-tolerant logic and memory devices. Recent improvements in the synthesis of Bi2Se3 have positioned researchers to fabricate new devices to probe the limits of these materials. The fabrication of such devices, of course, requires etching of the topological insulator, in addition to other materials including gate oxides and contacts which may impact the topologically protected surface states. In this paper, we study the impact of He+ sputtering and inductively coupled plasma Cl2 and SF6 reactive etch chemistries on the physical, chemical, and electronic properties of Bi2Se3. Chemical analysis by X-ray photoelectron spectroscopy tracks changes in the surface chemistry and Fermi level, showing preferential removal of Se that results in vacancy-induced n-type doping. Chlorine-based chemistry successfully etches Bi2Se3 but with residual Se–Se bonding and interstitial Cl species remaining after the etch. The Se vacancies and residuals can be removed with postetch anneals in a Se environment, repairing Bi2Se3 nearly to the as-grown condition. Critically, in each of these cases, angle-resolved photoemission spectroscopy (ARPES) reveals that the topologically protected surface states remain even after inducing significant surface disorder and chemical changes, demonstrating that topological insulators are quite promising for defect-tolerant electronics. Changes to the ARPES intensity and momentum broadening of the surface states are discussed. Fluorine-based etching aggressively reacts with the film resulting in a relatively thick insulating film of thermodynamically favored BiF3 on the surface, prohibiting the use of SF6-based etching in Bi2Se3 processing

Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

High quality sub-10 nm high-k dielectrics are deposited on top of MoS2 and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO2 and an Al2O3/HfO2 bilayer shows significant improvement in device performance due to the insertion of the thin Al2O3 layer. The results show that the Al2O3 buffer layer improves the interface quality by effectively reducing the net fixed positive oxide charge at the top-gate MoS2/high-k dielectric interface. Dual-gate sweeping, where both the top-gate and the back-gate are swept simultaneously, provides significant insight into the role of these oxide charges and improves overall device performance. Dual-gate transistors encapsulated in an Al2O3 dielectric demonstrate a near-ideal subthreshold swing of ∼60 mV/dec and a high field effect mobility of 100 cm2/V·s

Interface chemistry of contact metals and ferromagnets on the topological insulator Bi2Se3

The interface between the topological insulator Bi2Se3 and deposited metal films is investigated using x-ray photoelectron spectroscopy including conventional contact metals (Au, Pd, Cr, and Ir) and magnetic materials (Co, Fe, Ni, Co0.8Fe0.2, and Ni0.8Fe0.2). Au is the only metal to show little or no interaction with the Bi2Se3, with no interfacial layer between the metal and the surface of the TI. The other metals show a range of reaction behaviors with the relative strength of reaction (obtained from the amount of Bi2Se3 consumed during reaction) ordered as: Au < Pd < Ir < Co ≤ CoFe < Ni < Cr < NiFe < Fe, in approximate agreement with the behavior expected from the Gibbs free energies of formation for the alloys formed. Post metallization anneals at 300°C in vacuum were also performed for each interface. Several of the metal films were not stable upon anneal and desorbed from the surface (Au, Pd, Ni, and Ni0.8Fe0.2), while Cr, Fe, Co, and Co0.8Fe0.2 showed accelerated reactions with the underlying Bi2Se3, including inter-diffusion between the metal and Se. Ir was the only metal to remain stable following anneal, showing no significant increase in reaction with the Bi2Se3. This study reveals the nature of the metal-Bi2Se3 interface for a range of metals. The reactions observed must be considered when designing Bi2Se3 based devices

Examining the Properties of Low-Luminosity Hosts of Type Ia Supernovae from ASAS-SN

We present a spectroscopic analysis of 44 low-luminosity host galaxies of Type Ia supernovae (SNe Ia) detected by the All-Sky Automated Survey for Supernovae (ASAS-SN), using the emission lines to measure metallicities and star formation rates. We find that although the star formation activity of our sample is representative of general galaxies, there is some evidence that the lowest-mass SN Ia host galaxies (log($M_\star/M_\odot$)$<8$) in our sample have high metallicities compared to general galaxies of similar masses. We also identify a subset of 5 galaxies with particularly high metallicities. This highlights the need for spectroscopic analysis of more low-luminosity, low-mass SN Ia host galaxies to test the robustness of these conclusions and their potential impact on our understanding of SN Ia progenitors.Comment: 13 pages, 7 figures, 2 tables. Submitted to ApJ. Full versions of the tables in the paper are available in machine-readable format as ancillary file

TESS Shines Light on the Origin of the Ambiguous Nuclear Transient ASASSN-18el

We analyze high-cadence data from the Transiting Exoplanet Survey Satellite (TESS) of the ambiguous nuclear transient (ANT) ASASSN-18el. The optical changing-look phenomenon in ASASSN-18el has been argued to be due to either a drastic change in the accretion rate of the existing active galactic nucleus (AGN) or the result of a tidal disruption event (TDE). Throughout the TESS observations, short-timescale stochastic variability is seen, consistent with an AGN. We are able to fit the TESS light curve with a damped-random-walk (DRW) model and recover a rest-frame variability amplitude of $\hat{\sigma} = 0.93 \pm 0.02$ mJy and a rest-frame timescale of $\tau_{DRW} = 20^{+15}_{-6}$ days. We find that the estimated $\tau_{DRW}$ for ASASSN-18el is broadly consistent with an apparent relationship between the DRW timescale and central supermassive black hole mass. The large-amplitude stochastic variability of ASASSN-18el, particularly during late stages of the flare, suggests that the origin of this ANT is likely due to extreme AGN activity rather than a TDE.Comment: 13 pages, 8 figures. Will be submitted to AAS journals. Comments welcom