Utilizing Lipopolysaccharide in Exhaled Breath Condensate to Diagnose Gram Negative Pneumonia

A device for collecting exhaled breath condensate from a subject. The device comprises a plunger assembly and a stopper. The stopper is connected to the plunger disk of the plunger assembly by a plurality of support pins and is configured for sealing engagement. The device is utilized to collect exhaled breath condensate from both spontaneously breathing and mechanically ventilated subjects and the devices utilized to determine whether lipopolysaccharide is present in the collected exhaled breath condensate

Utilizing lipopolysaccharide in exhaled breath condensate to diagnose gram negative pneumonia

A device for collecting exhaled breath condensate from a subject. The device comprises a plunger assembly and a stopper. The stopper is connected to the plunger disk of the plunger assembly by a plurality of support pins and is configured for sealing engagement. The device is utilized to collect exhaled breath condensate from both spontaneously breathing and mechanically ventilated subjects and the devices utilized to determine whether lipopolysaccharide is present in the collected exhaled breath condensate

Designing the Online Collaboratory for the Global Social Benefit Incubator

Pedro Hernandez-Ramos, James L. Koch, Albert Bruno, and Eric Carlson describe the online collaboratory planned for the Global Social Benefit Incubator (GSBI), an international education program designed to serve social benefit entrepreneurs working in the fields of education, health, economic development, the environment, and equality around the world, primarily in developing countries. Hosted by Santa Clara University, the GSBI has held two-week intensive workshops for selected social benefit entrepreneurs since 2003. The program has identified two major goals for its development: (1) establishing an innovative, blended learning environment (face-to-face and online) capable of addressing the needs of a wide range of learners and (2) extending the program\u27s reach via an online communication, collaboration, and learning environment. Current technological resources are inadequate to the program\u27s long-term goals, leading to the need to develop an extended collaboratory where participants could continue to contribute long after the end of their residential experience. Key objectives for this developmental research project include the design or adaptation of online tools that support distributed knowledge construction, skill development, communication, and collaboration for learners with different backgrounds, capabilities, language skills, interests, and priorities. The authors posit that project outcomes would be meaningful at two complementary levels: pedagogical innovations addressing heterogeneous adult learner populations and innovations in the design of online learning environments

Effective current-driven memory operations for low-power ReRAM applications

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Al document ha d’aparèixer l’enllaç a la publicació original a IEEE, o bé al Digital Object Identifier (DOI).Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative solutions for several applications. Most works so far have used voltage-based driving schemes for both WRITE and READ operations. However, results from current-driven WRITE operations have shown high uniformity in switching performance, and thus constitute a valid alternative to consider, but current-driven READ operations have rarely been explored. In this context, here we tested a current-based READ/WRITE memory driving scheme on commercial self-directed channel (SDC) devices, while operating constantly at low current levels between tenths of nA and 1.5 uA. We propose a novel method to carry out efficient READ operations exploiting the transient response of the voltage on the current-driven ReRAM memory cells. For READ operations performed at 100 nA, we calculated the cumulative probability distribution of the standard deviation of the measured voltage ( σV ) on the devices and we observed a ratio σV−HRS/σV−LRS∼10× . Moreover, the HRS and LRS states were distinguishable in all the tested devices with less than 0.5% error. Finally, the calculated energy consumption ( ESET≈10 nJ, ERESET≈30 nJ, and EREAD between 80–400 pJ) was competitive even when the duration of the READ/WRITE current pulses was suboptimal in the millisecond range. Therefore, the presented results validate the promising characteristics and the power-efficiency of the proposed READ method for current-driven ReRAM circuits and applications.This work was supported in part by the Chilean Government through the National Fund for Scientific and Technological Development (FONDECYT) under Grant 1221747; in part by the National Agency for Research and Development (ANID)-Basal under Grant FB0008; in part by the MICINN, Spain, through PRITES Project under Grant PID2019-105658RB-I00; and in part by FLEXRRAM Project under Grant TED2021-129643B-I00.Peer ReviewedPostprint (published version

Stochastic resonance exploration in current-driven ReRAM devices

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Advances in emerging resistive random-access memory (ReRAM) technology show promise for its use in future computing systems, enabling neuromorphic and memory-centric computing architectures. However, one aspect that holds back the widespread practical use of ReRAM is the behavioral variability of resistive switching devices. In this context, a radically new path towards ReRAM-based electronics concerns the exploitation of noise and the Stochastic Resonance (SR) phenomenon as a mechanism to mitigate the impact of variability. While SR has been already demonstrated in ReRAM devices and its potential impact has been analyzed for memory applications, related works have only focused on voltage input signals. In this work we present preliminary results concerning the exploration of SR in current-driven ReRAM devices, commercially available by Knowm Inc. Our results indicate that additive noise of amplitude s = 0.125uA can stabilize the cycling performance of the devices, whereas higher noise amplitude improves the HRS-LRS resistance window, thus could affect positively the Bit Error Rate (BER) metric in ReRAM memory applications.Supported by the Chilean research grants FONDECYT INICIACION 11180706 and ANID-Basal FB0008, and by the Spanish MCIN grants PID2019-105658RB-I00, and MCIN/AEI/10.13039/501100011033 grant PID2019-103869RB-C33.Peer ReviewedPostprint (author's final draft