Innovation, Adoption, Ownership, and Productivity: Evidence from Ukraine

How do new and foreign firms achieve superior productivity? Do they conduct more and better R&D? Or do they distinguish themselves through computerization and organizational capital? We investigate the determinants of and returns to several types of investment, using a panel of over 40,000 Ukrainian industrial firms in 2000-2007. Foreign firms engage in more non-technological investment and IT and less in R&D than domestic private firms. Similarly, new firms invest more in non-technological capital and IT and less in R&D than initially state-owned firms. Productivity gains from R&D and non-technology investment are insignificantly different across ownership types, whereas foreign firms achieve much higher returns to IT investment than other firms. These results suggest that foreign firms outperform others via organizational capital that is better able to exploit IT investment. New firm productivity growth is a result of higher investment volume rather than investment efficiency.R&D, information technology, foreign ownership, transition, Eastern Europe, Ukraine

All-optical hyperpolarization of electron and nuclear spins in diamond

Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin polarization of $^{13}\mathrm{C}$ and $^{15}\mathrm{N}$ in $^{15}\mathrm{N}$-doped diamond. $^{15}\mathrm{N}$ polarization enhancements up to $-2000$ above thermal equilibrium are observed in the paramagnetic system $\mathrm{N_s}^{0}$. Nuclear spin polarization is shown to diffuse to bulk $^{13}\mathrm{C}$ with NMR enhancements of $-200$ at room temperature and $-500$ at $\mathrm{240~K}$, enabling a route to microwave-free high-sensitivity NMR study of biological samples in ambient conditions.Comment: 5 pages, 5 figure

NF05-645 Infants and Toddlers — Developing More Than One Language

When infants and toddlers are developing more than one language, the goal is that they will learn English and develop fluency in their home language. Children can become truly bilingual and be able to use two or more languages with fequal fluency. Children, families, schools, and communities all benefit when children keep their connection to their language and heritage

NF05-644 Relationships: The Heart of Language and Literacy

Infants and toddlers learn early language and literacy skills in the context of their relationships with the adults around them as if they are putting together a puzzle. Most of the puzzle pieces involve taking turns with the baby — your turn, my turn, your turn, my turn. The turns might be with actions or with talking. The turns might be very quick or rather slow. This NebFact discusses turn-taking; what it involves and the strategies used

NF05-637 The Power of Family Literacy

Virtually all families want their children to learn to read and write, and to succeed in school, and are eager to provide any support necessary. Family involvement in everyday language- and literacy-related activities has a significant impact on children\u27s language dvevelopment acquisition of early literacy skills. Early language and literacy activities at home contribute to differences when children enter school

NF05-644 Relationships: The Heart of Language and Literacy

Infants and toddlers learn early language and literacy skills in the context of their relationships with the adults around them as if they are putting together a puzzle. Most of the puzzle pieces involve taking turns with the baby — your turn, my turn, your turn, my turn. The turns might be with actions or with talking. The turns might be very quick or rather slow. This NebFact discusses turn-taking; what it involves and the strategies used

The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3

The insulator/metal transition induced by hole-doping due to neodymium vacancies of the Mott- Hubbard antiferromagnetic insulator, Nd1-xTiO3, is studied over the composition range 0.010(6) < x < 0.243(10). Insulating p-types conduction is found for x < 0.071(10). Anderson localization in the presence of a Mott-Hubbard gap, is the dominant localization mechanism for the range of 0.074(10) < x < 0.089(1) samples. For x < 0.089(1), n-type conduction is observed and the activation energy extrapolates to zero by x < 0.1. The 0.095(8) < x < 0.203(10) samples are Fermi-liquid metals and the effects of strong electronic correlations are evident near the metal-to-insulator boundaries in features such as large Fermi liquid T2 coefficients. For 0.074(9) < x < 0.112(4), a weak negative magnetoresistance is found below ~ 15 K and it is attributed to the interaction of conduction electrons with Nd3+ magnetic moments. Combining information from our companion study of the magnetic properties of Nd1-xTiO3 solid solution, a phase diagram is proposed. The main conclusions are that long range antiferromagnetic order disappears before the onset of metallic behavior and that the Anderson-Mott transition occurs over a finite range of doping levels. Our results differ from conclusions drawn from a similar study on the hole doped Nd1-xCaxTiO3 system which found the co-existence of antiferromagnetic order and metallic behavior and that the Mott transition occurs at a discrete doping level

Facile silane functionalization of graphene oxide

The facile silane functionalization of graphene oxide (GO) was achieved yielding vinyltrimethoxysilane-reduced graphene oxide (VTMOS-rGO) nanospheres located in the inter-layer spacing between rGO sheets via an acid–base reaction using aqueous media. The successful grafting of the silane agent with pendant vinyl groups to rGO was confirmed by a combination of Fourier-transform infrared (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The structure and speciation of the silane-graphene network (nanosphere) and, the presence of free vinyl groups was verified from solid-state magic angle spinning (MAS) and solution 13C and 29Si nuclear magnetic resonance (NMR) measurements. Evidence from Scanning Electron Microscopy (SEM), High-Resolution Transmission Electron Microscopy (HRTEM) and TEM-High-Angle Annular Dark-Field (TEM-HAADF) imaging showed that these silane networks aided the exfoliation of the rGO layers preventing agglomeration, the interlayer spacing increased by 10 Å. The thermal stability (TGA/DTA) of VTMOS-rGO was significantly improved relative to GO, displaying just one degradation process for the silane network some 300 °C higher than either VTMOS or GO alone. The reduction of GO to VTMOS-rGO induced sp2 hybridization and enhanced the electrical conductivity of GO by 105 S m−1