1,968 research outputs found
Charge Dynamics at the Silicon(001) Surface Studied by Scanning Tunneling Microscopy and Surface Photovoltage
Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics
Theoretical study of isolated dangling bonds, dangling bond wires and dangling bond clusters on H:Si(100)-(21) surface
We theoretically study the electronic band structure of isolated unpaired and
paired dangling bonds (DB), DB wires and DB clusters on H:Si(100)-(21)
surface using Extended H\"uckel Theory (EHT) and report their effect on the Si
band gap. An isolated unpaired DB introduces a near-midgap state, whereas a
paired DB leads to and states, similar to those introduced by an
unpassivated asymmetric dimer (AD) Si(100)-(21) surface. Such induced
states have very small dispersion due to their isolation from the other states,
which reside in conduction and valence band. On the other hand, the surface
state induced due to an unpaired DB wire in the direction along the dimer row
(referred to as ), has large dispersion due to the strong coupling
between the adjacent DBs, being 3.84 apart. However, in the direction
perpendicular to the dimer row (referred to as [110]), due to the reduced
coupling between the DBs being 7.68 apart, the dispersion in the surface
state is similar to that of an isolated unpaired DB. Apart from this, a paired
DB wire in direction introduces and states similar
to those of an AD surface and a paired DB wire in [110] direction exhibits
surface states similar to those of an isolated paired DB, as expected. Besides
this, we report the electronic structure of different DB clusters, which
exhibit states inside the band gap that can be interpreted as superpositions of
states due to unpaired and paired DBs.Comment: 7 pages, 10 figure, 1 tabl
The Ge(001) (2 × 1) reconstruction: asymmetric dimers and multilayer relaxation observed by grazing incidence X-ray diffraction
Grazing incidence X-ray diffraction has been used to analyze in detail the atomic structure of the (2 × 1) reconstruction of the Ge(001) surface involving far reaching subsurface relaxations. Two kinds of disorder models, a statistical and a dynamical were taken into account for the data analysis, both indicating substantial disorder along the surface normal. This can only be correlated to asymmetric dimers.
Considering a statistical disorder model assuming randomly oriented dimers the analysis of 13 symmetrically independent in-plane fractional order reflections and of four fractional order reciprocal lattice rods up to the maximum attainable momentum transfer qz = 3c* (c* = 1.77 × 10−1 Å−1) indicates the formation of asymmetric dimers characterized by R>D = 2.46(5) Å as compared to the bulk bonding length of R = 2.45 Å. The dimer height of Δ Z = 0.74(15) Å corresponds to a dimer buckling angle of 17(4)°. The data refinement using anisotropic thermal parameters leads to a bonding length of RD = 2.44(4) Å and to a large anisotropy of the root mean-square vibration amplitudes of the dimer atoms (u112) 1/2 = 0.25 Å, (u222)1/2 = 0.14 Å, (u332)1/2 = 0.50 Å). We have evidence for lateral and vertical disp tenth layer below the surface
On the extreme points of the core of neighbour games and assignment games
Neighbour games arise from certain matching or sequencing situations in which only some specific pairs of players can obtain a positive gain. As a consequence, neighbour games are as well assignment games as line graph restricted games. We will show that the intersection of the class of assignment games and the class of line graph restricted games yields the class of neighbour games. Further, we give a necessary and sufficient condition for the convexity of neighbour games. In spite of the possible non-convexity of neighbour games, it turns out that for any neighbour game the extreme points of the core are marginal vectors. Moreover, we prove this for assignment games in general. Hence, for any assignment game the core is the convex hull of some marginal vectors.
Preroughening transitions in a model for Si and Ge (001) type crystal surfaces
The uniaxial structure of Si and Ge (001) facets leads to nontrivial
topological properties of steps and hence to interesting equilibrium phase
transitions. The disordered flat phase and the preroughening transition can be
stabilized without the need for step-step interactions. A model describing this
is studied numerically by transfer matrix type finite-size-scaling of interface
free energies. Its phase diagram contains a flat, rough, and disordered flat
phase, separated by roughening and preroughening transition lines. Our estimate
for the location of the multicritical point where the preroughening line merges
with the roughening line, predicts that Si and Ge (001) undergo preroughening
induced simultaneous deconstruction transitions.Comment: 13 pages, RevTex, 7 Postscript Figures, submitted to J. Phys.
On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs
The electronic properties of shallow acceptors in p-doped GaAs{110} are
investigated with scanning tunneling microscopy at low temperature. Shallow
acceptors are known to exhibit distinct triangular contrasts in STM images for
certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to
identify their energetic origin and behavior. A crucial parameter - the STM
tip's work function - is determined experimentally. The voltage dependent
potential configuration and band bending situation is derived. Ways to validate
the calculations with the experiment are discussed. Differential conductivity
maps reveal that the triangular contrasts are only observed with a depletion
layer present under the STM tip. The tunnel process leading to the anisotropic
contrasts calls for electrons to tunnel through vacuum gap and a finite region
in the semiconductor.Comment: 11 pages, 8 figure
Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study
A clean Si(001) surface thermally purified in an ultrahigh vacuum
molecular-beam epitaxy chamber has been investigated by means of scanning
tunneling microscopy. The morphological peculiarities of the Si(001) surface
have been explored in detail. The classification of the surface structure
elements has been carried out, the dimensions of the elements have been
measured, and the relative heights of the surface relief have been determined.
A reconstruction of the Si(001) surface prepared in the molecular-beam epitaxy
chamber has been found to be (8 x n). A model of the Si(001)-(8 x n) surface
structure is proposed.Comment: 4 pages, 8 figures. Complete versio
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