Scaling study of Si/SiGe MODFETs for RF applications

Based on the successful calibration on a 0.25 /spl mu/m strained Si/SiGe n-type MODFET, this paper presents a gate length scaling study of double-side doped Si/SiGe MODFETs. Our simulations show that gate length scaling improves device RF performance. However, the short channel effects (SCE) along with the parasitic delays limit the device performance improvements. We find that it is necessary to consider scaling (dimensions and doping) of both the lateral and vertical architecture in order to optimize the device design

Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications

Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping strategies on device performance and linearity. The device geometry is sensitive to both RF performance and device linearity. Doped channel devices are found to be promising for high linearity applications. Trade-off design strategies are required for reconciling the demands of high device performance and high linearity simultaneously. The simulations also suggest that gate length scaling helps to achieve higher RF performance, but decreases the linearity

SiGe HMODFET "KAIST" micropower model and amplifier realization

Published versio

Respostas hematológicas e plasmáticas de matrinxãs Brycon amazonicus exercitados e submetidos ao transporte.

O objetivo deste trabalho foi verificar as respostas hematológicas do transporte em matrinxãs exercitados à velocidade moderada pelo período de 60 dias

Quantum interference effects in p-Si1−xGex quantum wells

Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field

Inactivation of mediator complex protein 22 in podocytes results in intracellular vacuole formation, podocyte loss and premature death

Podocytes are critical for the maintenance of kidney ultrafiltration barrier and play a key role in the progression of glomerular diseases. Although mediator complex proteins have been shown to be important for many physiological and pathological processes, their role in kidney tissue has not been studied. In this study, we identified a mediator complex protein 22 (Med22) as a renal podocyte cell-enriched molecule. Podocyte-specific Med22 knockout mouse showed that Med22 was not needed for normal podocyte maturation. However, it was critical for the maintenance of podocyte health as the mice developed progressive glomerular disease and died due to renal failure. Detailed morphological analyses showed that Med22-deficiency in podocytes resulted in intracellular vacuole formation followed by podocyte loss. Moreover, Med22-deficiency in younger mice promoted the progression of glomerular disease, suggesting Med22-mediated processes may have a role in the development of glomerulopathies. This study shows for the first time that mediator complex has a critical role in kidney physiology.Peer reviewe

Impact of Public Charging Infrastructure on the Adoption of Electric Vehicles in London

The discussion on the importance of public charging infrastructure is usually framed around the ‘chicken-egg’ challenge of consumers feeling reluctant to purchase without the necessary infrastructure and policy makers reluctant to invest in the infrastructure without the demand. However, public charging infrastructure may be more crucial to EV adoption than previously thought. Historically, access to residential charging was thought to be a major factor in potential for growth in the EV market as it offered a guaranteed place for a vehicle to be charged. However, these conclusions were reached through studies conducted in regions with a high percentage of homes that have access to residential parking. The purpose of this study is to understand how the built environment may encourage uptake of EVs by seeking a correlation between EV ownership and public charging points in an urban and densely populated city such as London. Using a statistical approach with data from the Department for Transport and Zap Map, a statistically significant correlation was found between the total (slow, fast and rapid) number of public charging points and number of EV registrations per borough—with the strongest correlation found between EV registrations and rapid chargers. This research does not explicitly prove that there is a cause-and-effect relationship between public charging points EVs but challenges some of the previous literature which indicates that public charging infrastructure is not as important as home charging. The study also supports the notion that the built environment can influence human behaviour

Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-P\'erot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.Comment: 14 pages, 5 figure