Anomalous normal mode oscillations in semiconductor microcavities

Semiconductor microcavities as a composite exciton-cavity system can be characterized by two normal modes. Under an impulsive excitation by a short laser pulse, optical polarizations associated with the two normal modes have a {pi} phase difference. The total induced optical polarization is then expected to exhibit a sin{sup 2}({Omega}t)-like oscillation where 2{Omega} is the normal mode splitting, reflecting a coherent energy exchange between the exciton and cavity. In this paper the authors present experimental studies of normal mode oscillations using three-pulse transient four wave mixing (FWM). The result reveals surprisingly that when the cavity is tuned far below the exciton resonance, normal mode oscillation in the polarization is cos{sup 2}({Omega}t)-like, in contrast to what is expected form the simple normal mode model. This anomalous normal mode oscillation reflects the important role of virtual excitation of electronic states in semiconductor microcavities

Stimulated emission from semiconductor microcavities

Laser-like emissions from semiconductor microcavities at low temperature have attracted considerable attention recently because of the possibility of realizing a non-equilibrium condensate by using cavity-polaritons. In this paper the authors present experimental studies of optical properties of a microcavity near the lasing threshold. They show that the minimum lasing threshold is achieved when the cavity is tuned significantly below the exciton line center. By comparing emission spectra with reflectivity spectra, they also show that well-resolved doublet in the emission spectra near the lasing threshold are not associated with cavity-polaritons. These results suggest that laser-like emissions form the microcavity are due to conventional stimulated emission processes with exciton localization playing a significant role

Size dependence of selectively oxidized VCSEL transverse-mode structure

The performance of vertical cavity surface emitting lasers (VCSELs) has improved greatly in recent years. Much of this improvement can be attributed to the use of native oxide layers within the laser structure, providing both electrical and optical transverse confinement. Understanding this optical confinement will be vital for the future realization of yet smaller lasers with ultralow threshold currents. Here the authors report the spectral and modal properties of small (0.5 {micro}m to 5 {micro}m current aperture) VCSELs and identify Joule heating as a dominant effect in the resonator properties of the smallest lasers

Coupled resonator vertical cavity laser diodes

For many applications, the device performance of edge emitting semiconductor lasers can be significantly improved through the use of multiple section devices. For example, cleaved coupled cavity (C3) lasers have been shown to provide single mode operation, wavelength tuning, high speed switching, as well as the generation of short pulses via mode-locking and Q-switching [1]. Using composite resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the coupling between the monolithic cavities, incorporate passive or active resonators which are spectrally degenerate or detuned, and to fabricate these devices in 2-dimensional arrays. Composite resonator vertical cavity lasers (CRVCL) have been examined using optical pumping and electrical injection [2-5]. We report on CRVCL diodes and show that efficient modulation of the laser emission can be achieved by either forward or reverse biasing the passive cavity within a CRVCL

In-situ spectral reflectance for improving molecular beam epitaxy device growth

This report summarizes the development of in situ spectral reflectance as a tool for improving the quality, reproducibility, and yield of device structures grown from compound semiconductors. Although initially targeted at MBE (Molecular Beam Epitaxy) machines, equipment difficulties forced the authors to test most of their ideas on a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. A pre-growth control strategy using in situ reflectance has led to an unprecedented demonstration of process control on one of the most difficult device structures that can be grown with compound semiconductor materials. Hundreds of vertical cavity surface emitting lasers (VCSEL`s) were grown with only {+-} 0.3% deviations in the Fabry-Perot cavity wavelength--a nearly ten-fold improvement over current calibration methods. The success of the ADVISOR (Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance) method has led to a great deal of interest from the commercial sector, including use by Hewlett Packard and Honeywell. The algorithms, software and reflectance design are being evaluated for patents and/or license agreements. A small company, Filmetrics, Inc., is incorporating the ADVISOR analysis method in its reflectometer product

Hydrogen implanted 1.3 {micro}m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors

A 1.3 {micro}m wavelength vertical-cavity surface-emitting laser (VCSEL) containing proton implanted isolation regions and a dielectric top mirror and a wafer-bonded GaAs/AlAs bottom mirror was fabricated. A room temperature pulsed threshold current density of 1.13 kA/cm{sup 2} and a threshold current of 2 mA have been demonstrated

Measurements of the observed cross sections for e+e−→e^+e^-\to exclusive light hadrons containing π0π0\pi^0\pi^0 at s=3.773\sqrt s= 3.773, 3.650 and 3.6648 GeV

By analyzing the data sets of 17.3, 6.5 and 1.0 pb$^{-1}$ taken, respectively, at $\sqrt s= 3.773$, 3.650 and 3.6648 GeV with the BES-II detector at the BEPC collider, we measure the observed cross sections for $e^+e^-\to \pi^+\pi^-\pi^0\pi^0$, $K^+K^-\pi^0\pi^0$, $2(\pi^+\pi^-\pi^0)$, $K^+K^-\pi^+\pi^-\pi^0\pi^0$ and $3(\pi^+\pi^-)\pi^0\pi^0$ at the three energy points. Based on these cross sections we set the upper limits on the observed cross sections and the branching fractions for $\psi(3770)$ decay into these final states at 90% C.L..Comment: 7 pages, 2 figure

Field-induced single-ion magnetic behaviour in a highly luminescent Er3+ complex

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Partial wave analysis of J/\psi \to \gamma \phi \phi

Using $5.8 \times 10^7 J/\psi$ events collected in the BESII detector, the radiative decay $J/\psi \to \gamma \phi \phi \to \gamma K^+ K^- K^0_S K^0_L$ is studied. The $\phi\phi$ invariant mass distribution exhibits a near-threshold enhancement that peaks around 2.24 GeV/$c^{2}$. A partial wave analysis shows that the structure is dominated by a $0^{-+}$ state ($\eta(2225)$) with a mass of $2.24^{+0.03}_{-0.02}{}^{+0.03}_{-0.02}$ GeV/$c^{2}$ and a width of $0.19 \pm 0.03^{+0.06}_{-0.04}$ GeV/$c^{2}$. The product branching fraction is: $Br(J/\psi \to \gamma \eta(2225))\cdot Br(\eta(2225)\to \phi\phi) = (4.4 \pm 0.4 \pm 0.8)\times 10^{-4}$.Comment: 11 pages, 4 figures. corrected proof for journa

Direct Measurements of Absolute Branching Fractions for D0 and D+ Inclusive Semimuonic Decays

By analyzing about 33 $\rm pb^{-1}$ data sample collected at and around 3.773 GeV with the BES-II detector at the BEPC collider, we directly measure the branching fractions for the neutral and charged $D$ inclusive semimuonic decays to be $BF(D^0 \to \mu^+ X) =(6.8\pm 1.5\pm 0.7)$ and $BF(D^+ \to \mu^+ X) =(17.6 \pm 2.7 \pm 1.8)$, and determine the ratio of the two branching fractions to be $\frac{BF(D^+ \to \mu^+ X)}{BF(D^0 \to \mu^+ X)}=2.59\pm 0.70 \pm 0.25$