155 research outputs found
The strength of the radial-breathing mode in single-walled carbon nanotubes
We show by ab initio calculations that the electron-phonon coupling matrix
element M of the radial breathing mode in single-walled carbon nanotubes
depends strongly on tube chirality. For nanotubes of the same diameter the
coupling strength |M|^2 is up to one order of magnitude stronger for zig-zag
than for armchair tubes. For (n,m) tubes M depends on the value of (n-m) mod 3,
which allows to discriminate semiconducting nano tubes with similar diameter by
their Raman scattering intensity. We show measured resonance Raman profiles of
the radial breathing mode which support our theoretical predictions
Chirality distribution and transition energies of carbon nanotubes
From resonant Raman scattering on isolated nanotubes we obtained the optical
transition energies, the radial breathing mode frequency and Raman intensity of
both metallic and semiconducting tubes. We unambiguously assigned the chiral
index (n_1,n_2) of approximately 50 nanotubes based solely on a third-neighbor
tight-binding Kataura plot and find omega_RBM=214.4cm^-1nm/d+18.7cm^-1. In
contrast to luminescence experiments we observe all chiralities including
zig-zag tubes. The Raman intensities have a systematic chiral-angle dependence
confirming recent ab-initio calculations.Comment: 4 pages, to be published in Phys. Rev. Let
On the inner Double-Resonance Raman scattering process in bilayer graphene
The dispersion of phonons and the electronic structure of graphene systems
can be obtained experimentally from the double-resonance (DR) Raman features by
varying the excitation laser energy. In a previous resonance Raman
investigation of graphene, the electronic structure was analyzed in the
framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer
DR process. In this work we analyze the data considering the inner DR process,
and obtain SWM parameters that are in better agreement with those obtained from
other experimental techniques. This result possibly shows that there is still a
fundamental open question concerning the double resonance process in graphene
systems.Comment: 5 pages, 3 figure
Low energy excitations in graphite: The role of dimensionality and lattice defects
In this paper, we present a high resolution angle resolved photoemission
spectroscopy (ARPES) study of the electronic properties of graphite. We found
that the nature of the low energy excitations in graphite is particularly
sensitive to interlayer coupling as well as lattice disorder. As a consequence
of the interlayer coupling, we observed for the first time the splitting of the
bands by 0.7 eV near the Brillouin zone corner K. At low
binding energy, we observed signatures of massless Dirac fermions with linear
dispersion (as in the case of graphene), coexisting with quasiparticles
characterized by parabolic dispersion and finite effective mass. We also report
the first ARPES signatures of electron-phonon interaction in graphite: a kink
in the dispersion and a sudden increase in the scattering rate. Moreover, the
lattice disorder strongly affects the low energy excitations, giving rise to
new localized states near the Fermi level. These results provide new insights
on the unusual nature of the electronic and transport properties of graphite.Comment: 10 pages, 15 figure
Fracture characterization using frequency-dependent shear wave anisotropy analysis of microseismic data
Probing Mechanical Properties of Graphene with Raman Spectroscopy
The use of Raman scattering techniques to study the mechanical properties of
graphene films is reviewed here. The determination of Gruneisen parameters of
suspended graphene sheets under uni- and bi-axial strain is discussed and the
values are compared to theoretical predictions. The effects of the
graphene-substrate interaction on strain and to the temperature evolution of
the graphene Raman spectra are discussed. Finally, the relation between
mechanical and thermal properties is presented along with the characterization
of thermal properties of graphene with Raman spectroscopy.Comment: To appear in the Journal of Materials Scienc
Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy
Double-resonance Raman scattering is a sensitive probe to study the electron-phonon scattering pathways in crystals. For semiconducting two-dimensional transition-metal dichalcogenides, the double-resonance Raman process involves different valleys and phonons in the Brillouin zone, and it has not yet been fully understood. Here we present a multiple energy excitation Raman study in conjunction with density functional theory calculations that unveil the double-resonance Raman scattering process in monolayer and bulk MoS2. Results show that the frequency of some Raman features shifts when changing the excitation energy, and first-principle simulations confirm that such bands arise from distinct acoustic phonons, connecting different valley states. The double-resonance Raman process is affected by the indirect-to-direct bandgap transition, and a comparison of results in monolayer and bulk allows the assignment of each Raman feature near the M or K points of the Brillouin zone. Our work highlights the underlying physics of intervalley scattering of electrons by acoustic phonons, which is essential for valley depolarization in MoS2
Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
We demonstrate electrochemical top gating of graphene by using a solid
polymer electrolyte. This allows to reach much higher electron and hole doping
than standard back gating. In-situ Raman measurements monitor the doping. The G
peak stiffens and sharpens for both electron and hole doping, while the 2D peak
shows a different response to holes and electrons. Its position increases for
hole doping, while it softens for high electron doping. The variation of G peak
position is a signature of the non-adiabatic Kohn anomaly at . On the
other hand, for visible excitation, the variation of the 2D peak position is
ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong
dependence on doping, making it a sensitive parameter to monitor charges.Comment: 7 pages, 8 figure
Reservoir stress path and induced seismic anisotropy: Results from linking coupled fluid-flow/geomechanical simulation with seismic modelling
We present a workflow linking coupled fluid-flow and geomechanical simulation with seismic modelling to predict seismic anisotropy induced by nonhydrostatic stress changes. We generate seismic models from coupled simulations to examine the relationship between reservoir geometry, stress path and seismic anisotropy. The results indicate that geometry influences the evolution of stress, which leads to stress-induced seismic anisotropy. Although stress anisotropy is high for the small reservoir, the effect of stress arching and the ability of the side-burden to support the excess load limit the overall change in effective stress and hence seismic anisotropy. For the extensive reservoir, stress anisotropy and induced seismic anisotropy are high. The extensive and elongate reservoirs experience significant compaction, where the inefficiency of the developed stress arching in the side-burden cannot support the excess load. The elongate reservoir displays significant stress asymmetry, with seismic anisotropy developing predominantly along the long-edge of the reservoir. We show that the link between stress path parameters and seismic anisotropy is complex, where the anisotropic symmetry is controlled not only by model geometry but also the nonlinear rock physics model used. Nevertheless, a workflow has been developed to model seismic anisotropy induced by non-hydrostatic stress changes, allowing field observations of anisotropy to be linked with geomechanical models
Carbon nanotubes as excitonic insulators
Fifty years ago Walter Kohn speculated that a zero-gap semiconductor might be unstable against the spontaneous generation of excitons-electron-hole pairs bound together by Coulomb attraction. The reconstructed ground state would then open a gap breaking the symmetry of the underlying lattice, a genuine consequence of electronic correlations. Here we show that this excitonic insulator is realized in zero-gap carbon nanotubes by performing first-principles calculations through many-body perturbation theory as well as quantum Monte Carlo. The excitonic order modulates the charge between the two carbon sublattices opening an experimentally observable gap, which scales as the inverse of the tube radius and weakly depends on the axial magnetic field. Our findings call into question the Luttinger liquid paradigm for nanotubes and provide tests to experimentally discriminate between excitonic and Mott insulators
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