The Lie Brackets on Time Scales

The Lie derivative, which has a wide range of application in physics and geometry, is trying to be examined on time scales. Firstly, nabla Lie bracket is defined on two-dimensional time scales. Secondly, the nabla Lie multiplication and some properties are given on the time scales. Lastly, for analyzing the differences between the real Lie multiplication and the nabla Lie multiplication, a numerical example is given

Insights from structural studies of the cardiovirus 2A protein.

Cardioviruses are single-stranded RNA viruses of the family Picornaviridae. In addition to being the first example of internal ribosome entry site (IRES) utilization, cardioviruses also employ a series of alternative translation strategies, such as Stop-Go translation and programmed ribosome frameshifting. Here, we focus on cardiovirus 2A protein, which is not only a primary virulence factor, but also exerts crucial regulatory functions during translation, including activation of viral ribosome frameshifting and inhibition of host cap-dependent translation. Only recently, biochemical and structural studies have allowed us to close the gaps in our knowledge of how cardiovirus 2A is able to act in diverse translation-related processes as a novel RNA-binding protein. This review will summarize these findings, which ultimately may lead to the discovery of other RNA-mediated gene expression strategies across a broad range of RNA viruses

Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications

Cataloged from PDF version of article.Semi-insulating character ( sheet resistivity of 3.26 x 10(11) ohm/sq ) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor ( HEMT ) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. (c) 2006 American Institute of Physics

Pollen characteristics and in vitro pollen germination of Cedrus libani A. Rich.

This study aims to determine the germination characteristics, pollen tube developments, effects of germination media and temperature and incubation durations of the pollens obtained from the four clones (11342, 11344, 11345 and 11351) of Cedrus libani A. Rich. (Lebanon Cedrus) obtained from clonalseed orchard (with national registration no: Eskisehir 117) between 2004 and 2006 as well as of those taken from clone no: 11351 in 2004. They were stored at 3°C for 13 months till they were investigated experimentally. MS medium was preferred for pollen germination for its relative superiority. Three-day incubation period at 33°C temperature, in dark was applied along with the MS medium. The highest germination rate in MS medium was achieved in clone no.11342 with 84.77% among the pollen samplesof 2005. On the other hand the germination rate of the pollens taken from clone no: 11351 was determined as 49.95%

Dwell-time computation for stability of switched systems with time delays

Cataloged from PDF version of article.The aim of this study is to find an improved dwell time that guarantees the stability of switched systems with heterogeneous constant time-delays. Piecewise Lyapunov-Krasovkii functionals are used for each candidate system to investigate the stability of the switched time-delayed system. Under the assumption that each candidate system is stable for small delay values, a sufficient condition for dwell-time that guarantees the asymptotic stability is derived. Numerical examples are given to compare the results with the previously obtained dwell-time bounds. © The Institution of Engineering and Technology 2013

Chemical Visualization of a GaN p-n junction by XPS

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device

Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure

Cataloged from PDF version of article.The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al0.83In0.17 N barrier exhibits a sheet electron density of 2.0 x 10(13) cm(-2) with a high electron mobility of 1540 cm(2) V-1 s(-1). AnAl(0.83)In(0.17)N barrier HEMT device with 1 mu m gate length provides a current density of 1.0 A mm(-1) at V-GS = 0 V and an extrinsic transconductance of 242 mS mm(-1), which are remarkably improved compared to that of a conventional Al0.3Ga0.7N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 degrees C have been applied to Al0.83In0.17N and Al0.3Ga0.7N barrier heterostructures. As expected, the electrical properties of an Al0.83In0.17N barrier HEMT structure showed less stability than that of an Al0.3Ga0.7N barrier HEMT to the thermal annealing. The structural properties of Al0.83In0.17N/GaN also showed more evidence for decomposition than that of the Al0.3Ga0.7N/GaN structure after 800 degrees C post-annealing