Engineering the mode parity of the ground state in photonic crystal molecules

We propose a way to engineer the design of photonic molecules, realized by coupling two photonic crystal cavities, that allows an accurate control of the parity of their ground states. The spatial distribution of the fundamental mode of photonic molecules can be tuned from a bonding to an antibonding character by a local and continuous modification of the dielectric environment in between the two coupled cavities. In the systems that we investigate the transition could be experimentally accomplished by post-fabrication methods in either a reversible or an irreversible way. We notably find that the mode parity exchange is tightly related to a dramatic variation of the far field emission pattern, leading to the possibility to exploit these systems and techniques for future applications in optoelectronics

Spatial steadiness of individual disorder modes upon controlled spectral tuning

Recent innovative applications in disordered photonics would strongly benefit from the possibility to achieve spectral tuning of the individual disorder localized photonic modes without affecting their spatial distributions. Here, we design and fabricate a two-dimensional disordered photonic system, made of a GaAs slab patterned with randomly distributed circular air scattering centers, supporting localized light modes with very small modal volume. The photoluminescence of InAs quantum dots embedded in the slab is used as a probe for near field experiments and gives direct access to the electric field intensity distribution of the localized random modes. We demonstrate that laser assisted oxidation of the GaAs slab performed by near field illumination can be used for a gentle tuning of the individual random modes without modifying the subtle balance leading to light localization given by multiple scattering

All optical switching of a single photon stream by excitonic depletion

Single semiconductor quantum dots have been extensively used to demonstrate the deterministic emission of high purity single photons. The single photon emission performance of these nanostructures has become very well controlled, offering high levels of photon indistinguishability and brightness. Ultimately, quantum technologies will require the development of a set of devices to manipulate and control the state of the photons. Here we measure and simulate a novel all-optical route to switch the single photon stream emitted from the excitonic transition in a single semiconductor quantum dot. A dual non-resonant excitation pumping scheme is used to engineer a switching device operated with GHz speeds, high differential contrasts, ultra-low power consumption and high single photon purity. Our device scheme can be replicated in many different zero dimensional semiconductors, providing a novel route towards developing a platform-independent on-chip design for high speed and low power consumption quantum devices. Using semiconductor quantum dots as single-photon sources for application to quantum technologies is promising due to the high brightness and photon purity of the emitted light. Here, a method of optically switching their emission based on excitonic depletion is presented

Near-field speckle imaging of light localization in disordered photonic

Optical localization in strongly disordered photonic media is an attractive topic for proposing novel cavity-like structures. Light interference can produce random modes confined within small volumes, whose spatial distribution in the near-field is predicted to show hot spots at the nanoscale. However, these near-field speckles have not yet been experimentally investigated due to the lack of a high spatial resolution imaging techniques. Here, we study a system where the disorder is induced by random drilling air holes in a GaAs suspended membrane with internal InAs quantum dots. We perform deep-subwavelength near-field experiments in the telecom window to directly image the spatial distribution of the electric field intensity of disordered-induced localized optical modes. We retrieve the near-field speckle patterns that extend over few micrometers and show several single speckles of the order of λ/10 size. The results are compared with the numerical calculations and with the recent findings in the literature of disordered media. Notably, the hot spots of random modes are found in proximity of the air holes of the disordered system

Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots

The fabrication of integrated quantum dot (QD)-optical microcavity systems is a requisite step for the realization of a wide range of nanophotonic experiments (and applications) that exploit the ability of QDs to emit nonclassical light, e.g., single photons. Thanks to their similar to 20-nm positioning accuracy and to their proven potential for single-photon operation, the QDs obtained by spatially selective hydrogen irradiation of dilute-nitride semiconductors-such as Ga(AsN) and Ga(PN)-are uniquely suited for integration with photonic nanodevices. In the present work, we demonstrate the ability to deterministically integrate single, site-controlled Ga(AsN)/Ga(AsN):H QDs within a photonic crystal (PhC) cavity. The properties of the fabricated QD-PhC cavity systems are then probed by photon correlation-providing clear evidence of single-photon emission-and time-resolved microphotoluminescence spectroscopy. Detailed information on the dynamics of our integrated nanodevices can be inferred by comparing these experiments to the solutions of a rate-equations system, developed by taking into account all the main processes leading to the capture, relaxation, and recombination of carriers in and out of the QD. This allows us to follow the evolution of the relevant recombination rates in our system for varying energy detuning, Delta E, between the QD and the PhC cavity. When the QD exciton transition is nearly resonant with the cavity mode, a large (>tenfold) enhancement of the spontaneous emission rate is observed, in substantial agreement with Jaynes-Cummings (JC) theory. For intermediate detunings (Delta E similar to 1.5-3.5 meV), on the other hand, the observed enhancement is significantly larger than that predicted by JC theory, due to the important role played by acoustic phonons in mediating the QD-PhC cavity coupling in a solid-state environment. Apart from its fundamental interest, the observation of such phonon-mediated, broadband enhancement of light-matter interaction significantly relaxes the requirements for the realization of a large variety of cavity QED-based experiments and applications. These include many photonic devices for which the use of site-controlled Ga(AsN)/Ga(AsN):H QDs would be inherently advantageous, such as those based on the coupling between more than one QD and a single cavity mode (e.g., few-QD nanolasers and QD solids)

Tailoring carbon nanotubes optical properties through chirality-wise silicon ring resonators

International audienceSemiconducting single walled carbon nanotubes (s-SWNT) have an immense potential for the development of active optoelectronic functionalities in ultra-compact hybrid photonic circuits. Specifically, s-SWNT have been identified as a very promising solution to implement light sources in the silicon photonics platform. Still, two major challenges remain to fully exploit the potential of this hybrid technology: the limited interaction between s-SWNTs and Si waveguides and the low quantum efficiency of s-SWNTs emission. Silicon micro-ring resonators have the potential capability to overcome these limitations, by providing enhanced light s-SWNT interaction through resonant light recirculation. Here, we demonstrate that Si ring resonators provide SWNT chirality-wise photoluminescence resonance enhancement, releasing a new degree of freedom to tailor s-SWNT optical properties. Specifically, we show that judicious design of the micro-ring geometry allows selectively promoting the emission enhancement of either (8,6) or (8,7) SWNT chiralities present in a high-purity polymer-sorted s-SWNT solution. In addition, we present an analysis of nanometric-sized silicon-on-insulator waveguides that predicts stronger light s-SWNT interaction for transverse-magnetic (TM) modes than for conventionally used transverse-electric (TE) modes

Photon correlation in GaAs self-assembled quantum dots

We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecting the formation of exciton complexes. Cross-correlation functions between these lines showed either bunching or antibunching behavior, depending on whether the relevant emission was from a biexciton cascade or a charged exciton recombination.Comment: 5 pages, 3 figure