Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors

This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and 1 MeV equivalent reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the microscopic reasons as based on defect analysis and their macroscopic consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60Co- doses can be completely understood by the formation of two point defects, both depending strongly on the Oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease resp. increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the Oxygen content or Si growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.Comment: 14 pages, 15 figure

A review on chemical mechanisms of kraft pulping

Kraft pulping of wood is based on efficient depolymerization and solubilization of lignin, while cellulose is relatively undamaged. Non-cellulose cell wall polysaccharides are however in some cases heavily degraded, especially pectin and to a lesser degree also glucomannan while, xylan is relatively stable. In this mini-review, the most important reactions in lignin and polysaccharide degradation in kraft pulping are described, both the technically favorable and the problematic reactions, and the chemical background to discuss the advantages and drawbacks of the process. An attempt to put the different reactions in the perspective of the goals of the pulping process is made and a special focus is on the development of color in the pulp fiber during the kraft pulping

Study of point- and cluster-defects in radiation-damaged silicon

Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a significant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few  1014 cm −2 and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280 ∘ C, are presented. A method based on SRH (Shockley–Read–Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occupied traps. The difference of ionisation energy of an isolated point defect and a fully occupied cluster, ΔEa , is extracted from the TSC data.Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to fluences of a few $10^{14}$ cm$^{-2}$ and energies between 3.5 and 27 MeV for isochronal annealing between 80 and 280{\deg}C, are presented. A method based on SRH (Shockley-Read-Hall) statistics is introduced, which assumes that the ionisation energy of the defects in a cluster depends on the fraction of occupied traps. The dfference of ionisation energy of an isolated point defect and a fully occupied cluster, $\Delta E_a$, is extracted from the TSC data. For the VOi (vacancy-oxygen interstitial) defect $\Delta E_a = 0$ is found, which cofirms that it is a point defect, and validates the method for point defects. For clusters made of deep acceptors the $\Delta E_a$ values for different defects are determined after annealing at 80{\deg}C as a function of electron energy, and for the irradiation with 15 MeV electrons as a function of annealing temperature. For the irradiation with 3.5 MeV electrons the value $\Delta E_a = 0$ is found, whereas for the electron energies of 6 to 27 MeV $\Delta E_a > 0$. This agrees with the expected threshold of about 5 MeV for cluster formation by electrons. The $\Delta E_a$ values determined as a function of annealing temperature show that the annealing rate is different for different defects. A naive diffusion model is used to estimate the temperature dependencies of the diffusion of the defects in the clusters