High Intensity Low Temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to -190 degrees C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V-oc starting from -20 degrees C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-p Ge heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique

Characterization of the manufacturing processes to grow triple-junction solar cells

A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested

Сравнительная характеристика типичной и атипичной (микоплазменной) пневмонии у детей

Aim: To compare the features of clinical-anamnestic and laboratory-instrumental data and treatment of children with typical and atypical (Mycoplasma) forms of pneumonia.Materials and methods. A comparative analysis was carried out of 1 70 case histories of children in hospital with a verified diagnosis of pneumonia in 2020. The basis for the diagnosis of Mycoplasma pneumonia was a positive PCR result of a smear of the posterior pharyngeal wall. The resulting data was constructed using Microsoft Excel 2007.Results. Mycoplasma pneumonia is specific for older schoolchildren; characterized by: prolonged course (73.5%), long-term preservation of an unproductive cough (75.7%), mild intoxication (68.6%) and catarrhal syndromes (54.3%), gradual onset (76.6%), severe lymphocytosis up to 55%, segmental or polysegmental damage to the lung tissue (92.7%).Цель: сравнить особенности клинико-анамнестических и лабораторно-инструментальных данных у детей с типичной и атипичной (микоплазменной) пневмонией.Материалы и методы. Был проведен сравнительный анализ 170 историй болезни детей, находящихся на стационарном лечении с верифицированным диагнозом пневмония в ДИБО БУЗ УР «ГКБ №7 МЗ УР» в 2020 г. Основанием для постановки диагноза микоплазменной пневмонии являлся положительный результат ПЦР мазка задней стенки глотки. Полученные данные были сконструированы с помощью Microsoft Excel 2007.Результаты. Микоплазменная пневмония специфична для детей старшего школьного возраста и характеризуется затяжным течением (73,5%), длительным сохранением малопродуктивного кашля (75,7%), слабо выраженными интоксикационным (68,6%) и катаральным синдромами (54,3%), постепенным началом (76,6%), выраженным лимфоцитозом до 55%, сегментарным или полисегментарным поражением легочной ткани (92,7%)

Space charge capacitance study of GaP/Si multilayer structures grown by plasma deposition

International audienceAbstract Microcrystalline gallium phosphide (GaP)/Si multilayer structures grown on GaP substrates using combination of plasma enhanced atomic layer deposition (PE-ALD) for GaP and plasma-enhanced chemical vapor deposition for Si layers deposition are studied by three main space charge capacitance techniques: capacitance versus voltage ( C-V ) profiling, admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS), which have been used on Schottky barriers formed on the GaP/Si multilayer structures. C-V profiling qualitatively demonstrates an electron accumulation in the Si/GaP wells. However, quantitative determination of the concentration and spatial position of its maximum is limited by the strong frequency dependence of the capacitance caused by electron capture/emission processes in/from the Si/GaP wells. These processes lead to signatures in AS and DLTS with activation energies equal to 0.39 ± 0.05 and 0.28 ± 0.05 eV, respectively, that are linked to the energy barrier at the GaP/Si interface. It is shown that the value obtained by AS (0.39 ± 0.05 eV) is related to the response from Si/GaP wells located in the quasi-neutral region of the Schottky barrier, and it corresponds to the conduction band offset at the GaP/Si interface, while DLTS rather probes wells located in the space charge region closer to the Schottky interface where the internal electric field yields to a lowering of the effective barrier in the Si/GaP wells. Two additional signatures were detected by DLTS, which are identified as defect levels in GaP. The first one is associated to the Si Ga + V P complex, while the second was already detected in single microcrystalline GaP layers grown by PE-ALD

Investigation of a Si H c Si heterojunction solar cells interface properties

Investigation of a Si H c Si Heterojunction Solar Cells Interface Propertie