The Molecularly Imprinted Polymers. Influence of Monomers on The Properties of Polymers - A Review

The synthesis of MIPs for two types of templates (herbicides, and flavonoids) and their application in analytical chemistry are discussed. Particular attention has been paid the issue of bonding the template and selection of appropriate monomer in different types of compounds. This short review aims at presenting the molecular imprinting technology (MIT) which is considered as an attractive method to produce impressive receptors for application in analytical chemistry. The challenge of designing and synthesizing a molecularly imprinted polymer (MIP) can be a daunting prospect to the uninitiated practitioner, simply because of the number of experimental variables involved, e.g. the nature and levels of template, functional monomers, cross-linkers, solvents, initiators and even the method of initiation and the duration of polymerization. Indubitably, the most important place of the polymer is its quotheartquot or the cavity corresponding to the template and the waynbs

Influence of Zn excess on compositional, structural and vibrational properties of Cu2ZnSn0.5Ge0.5Se4 thin films and their effect on solar cell efficiency

This Accepted Manuscript will be available for reuse under a CC BY-NC-ND licence after 24 months of embargo periodThe effect of Zn content on compositional, structural and vibrational properties of Cu2ZnSn1-xGexSe4 (CZTGSe, x ~ 0.5) thin films is studied. Kesterite layer is deposited by co-evaporation onto 5 × 5 cm2 Mo/SLG substrate followed by a thermal treatment at maximum temperature of 480 °C, obtaining areas with different composition and morphology which are due to the sample position in the co-evaporation system and to the non-uniform temperature distribution across the substrate. Kesterite layers with higher Zn amounts are characterized by lower Cu and Ge contents; however, a uniform Ge distribution through the absorber layer is detected in all cases. The excess Zn concentration leads to the formation of ZnSe secondary phase on the surface and in the bulk of the absorber as determined by Raman spectroscopy. When higher Ge content and no ZnSe are present in the absorber layer, a compact structure is formed with larger grain size of kesterite. This effect could explain the higher Voc of the solar cell. The Zn content does not affect the bandgap energy significantly (Eg near 1.3 eV), although the observed effect of Zn excess in CZTGSe results in a decreased device performance from 6.4 to 4.2%. This investigation reveals the importance of the control of the off-stoichiometric CZTGSe composition during the deposition process to enhance solar cells propertiesThis work was supported by Spanish Ministry of Science, Innovation and Universities Project WINCOST (ENE2016-80788-C5-2-R) and European Project INFINITE CELL (H2020-MSCA-RISE-2017-777968). ARP also acknowledges financial support from Community of Madrid within Youth Employment Program (PEJD-2017-PRE/IND-4062). MG acknowledges the financial support from ACCIÓ-Generalitat de Catalunya within the TECNIOspring Plus fellowship (TECSPR18-1-0048

Dysfunctional telomeres in primary cells from Fanconi anemia FANCD2 patients

© 2012 Joksic et al. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.This article has been made available through the Brunel Open Access Publishing Fund.Background: Fanconi anemia (FA) is characterized by sensitivity to DNA cross-linking agents, mild cellular, and marked clinical radio sensitivity. In this study we investigated telomeric abnormalities of non-immortalized primary cells (lymphocytes and fibroblasts) derived from FA patients of the FA-D2 complementation group, which provides a more accurate physiological assessment than is possible with transformed cells or animal models. Results: We analyzed telomere length, telomere dysfunction-induced foci (TIFs), sister chromatid exchanges (SCE), telomere sister chromatid exchanges (T-SCE), apoptosis and expression of shelterin components TRF1 and TRF2. FANCD2 lymphocytes exhibited multiple types of telomeric abnormalities, including premature telomere shortening, increase in telomeric recombination and aberrant telomeric structures ranging from fragile to long-string extended telomeres. The baseline incidence of SCE in FANCD2 lymphocytes was reduced when compared to control, but in response to diepoxybutane (DEB) the 2-fold higher rate of SCE was observed. In contrast, control lymphocytes showed decreased SCE incidence in response to DEB treatment. FANCD2 fibroblasts revealed a high percentage of TIFs, decreased expression of TRF1 and invariable expression of TRF2. The percentage of TIFs inversely correlated with telomere length, emphasizing that telomere shortening is the major reason for the loss of telomere capping function. Upon irradiation, a significant decrease of TIFs was observed at all recovery times. Surprisingly, a considerable percentage of TIF positive cells disappeared at the same time when incidence of γ-H2AX foci was maximal. Both FANCD2 leucocytes and fibroblasts appeared to die spontaneously at higher rate than control. This trend was more evident upon irradiation; the percentage of leucocytes underwent apoptosis was 2.59- fold higher than that in control, while fibroblasts exhibited a 2- h delay before entering apoptosis. Conclusion: The results of our study showed that primary cells originating from FA-D2 patients display shorten telomeres, elevated incidence of T-SCEs and high frequency of TIFs. Disappearance of TIFs in early response to irradiation represent distinctive feature of FANCD2 cells that should be examined further.This article is made available through the Brunel Open Access Publishing Fund. This work was supported by the Ministry of Education and Science of the Republic of Serbia (Project No.173046)

Kesterite thin films of Cu2ZnSnS4 obtained by spray pyrolysis

Thin films of Cu2ZnSnS4 CZTS were deposited using the spray pyrolysis method as relatively fast and vacuum free method. Obtained samples were analyzed using the X Ray Fluorescence, grazing incidence X Ray Diffraction and Raman Spectroscopy techniques. Analysis showed close to stoichiometry composition of the films with kesterite type structure but poor crystalline quality and possible existence of secondary phases. To improve the quality of the films, the as prepared layers were annealed in the presence of elemental Sn and S. Comparison of the results before and after annealing showed a strong improvement of the crystalline quality and a significant reduction of concentration of secondary phases of the films without significant change of composition. The measured optical band gap is equal to 1.52 and 1.55 eV in the as prepared and annealed films, respectively. The optical absorption coefficient is found to be gt; 10 4 cm

Cholesterol efflux promoting function of high-density lipoproteins in calcific aortic valve stenosis

Background and aims: Cholesterol efflux capacity is a functional property of high-density lipoproteins (HDL) reflecting the efficiency of the atheroprotective reverse cholesterol transport process in humans. Its relationship with calcific aortic valve stenosis (CAVS) has not been fully assessed yet. Methods: We evaluated HDL-CEC in a patient population with varying degrees of aortic valvular calcific disease, assessed using echocardiography and cardiac computed tomography. Measurement of biomarkers that reflect osteogenic and tissue remodeling, along with dietary and gut microbiota-derived metabolites were performed. Results: Patients with moderate-severe CAVS had significantly lower HDL-CEC compared to both control and aortic sclerosis subjects (mean: 6.09%, 7.32% and 7.26%, respectively). HDL-CEC displayed negative correlations with peak aortic jet velocity and aortic valve calcium score, indexes of CAVS severity (ρ = -0.298, p = 0.002 and ρ = -0.358, p = 0.005, respectively). In multivariable regression model, HDL-CEC had independent association with aortic valve calcium score (B: -0.053, SE: 0.014, p < 0.001), GFR (B: -0.034, SE: 0.012, p = 0.007), as well as with levels of total cholesterol (B: 0.018, SE: 0.005, p = 0.002). Conclusion: These results indicate an impairment of HDL-CEC in moderate-severe CAVS and may contribute to identify potential novel targets for CAVS management

Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2-4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devicesThe research leading to the presented results was partially supported by the European Project INFINITE-CELL (Ref. H2020-MSCA-RISE-2017-777968, 2017–2021, www.infinitecell.eu) and the Spanish MINECO Projects “WINCOST” (ENE2016-80788-C5-2-R) and PHOTOMANA (TEC2015- 69916-C2-1-R). The authors from the Institute of Applied Physics appreciate the financial support from STCU 6224 and from the Institutional Project No. CSSDT 15.817.02.04

Hopping magnetotransport of the band-gap tuningCu2Zn(SnxGe1-x)Se4 crystals

Resistivity, (T, x), of Cu2Zn(SnxGe1-x)Se4 (CZTGeSe) single crystals with x = 0 1 exhibits an activated character within the whole investigated temperature range between T ~ 10 320 K, attaining a minimum at x = 0.5. Magnetoresistance (MR) of CZTGeSe with x = 0.3, 0.5 and 0.7 is positive (pMR) in all magnetic fields of B up to 20 T at any T between ~ 40 320 K, whereas MR of samples with x = 0 and 1 contains a negative contribution (nMR). The dependence of (T) at B = 0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200 320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The MR law of ln (B) B2 is observed in both hopping conduction regimes above, provided that the nMR contribution is absent or saturated. Analysis of the (T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, corresponding to the minimum of a lattice disorder along with the maximum of DOS and of the defect concentration, as well as a highest proximity to the metal-insulator transition, suggest an optimum for electronic properties composition of CZTGeSe near x ~ 0.6 0.7

Mechanisms of charge transfer and electronic properties of Cu2ZnGeS4 from investigations of the high field magnetotransport

Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu2ZnGeS4, deeper investigations of its transport properties are required. In the present manuscript, we investigate resistivity, amp; 961; T , magnetoresistance and Hall effect in p type Cu2ZnGeS4 single crystals in pulsed magnetic fields up to 20 T. The dependence of amp; 961; T in zero magnetic field is described by the Mott type of the variable range hopping VRH charge transfer mechanism within a broad temperature interval of 100 200 K. Magnetoresistance contains the positive and negative components, which are interpreted by the common reasons of doped semiconductors. On the other hand, a joint analysis of the resistivity and magnetoresistance data has yielded series of important electronic parameters and permitted specification of the Cu2ZnGeS4 conductivity mechanisms outside the temperature intervals of the Mott VRH conduction. The Hall coefficient is negative, exhibiting an exponential dependence on temperature, which is quite close to that of amp; 961; T . This is typical of the Hall effect in the domain of the VRH charge transfer

AgxCu1 x 2ZnSnS4 thin films prepared by spray pyrolysis

One of the most detrimental problems in the further development of thin film solar cells based on kesterite type compound semiconductors is the limitation in open circuit voltage VOC . The latter, according to many theoretical and experimental studies, is mostly related to the high concentration of intrinsic defects, mainly with ZnCu antisites. Recently, a way for overcoming this problem by partial substitution of Cu cations by Ag was proposed. This may lead to a strong decrease of intrinsic defects due to higher formation energy of ZnAg defects and as result to increase of VOC. Taking this into account, we performed an investigation of AgxCu1 x 2ZnSnS4 thin films deposited by the spray pyrolysis method. The as deposited thin films with 10, 15 and 20 of Ag were annealed at 450 C for 60 min in presence of elemental sulfur. Structural investigations by XRD, as well as Raman spectroscopy studies confirmed the formation of solid solutions. Photoluminescence investigations showed one broad band, which exhibits the blue shift with the increase of Ag concentration. This could be explained by changes in the activation energy of the defect levels involved in radiative transition rather than with the band gap change. Keywords Kesterite, Thin Film, Spray Pyrolysis, XRD, Raman Spectroscop

Point defects, compositional fluctuations, and secondary phases in non stoichiometric kesterites

The efficiency of kesterite based solar cells is limited by various non ideal recombination paths, amongst others by a high density of defect states and by the presence of binary or ternary secondary phases within the absorber layer. Pronounced compositional variations and secondary phase segregation are indeed typical features of non stoichiometric kesterite materials. Certainly kesterite based thin film solar cells with an off stoichiometric absorber layer composition, especially Cu poor Zn rich, achieved the highest efficiencies, but deviations from the stoichiometric composition lead to the formation of intrinsic point defects vacancies, anti sites, and interstitials in the kesterite type material. In addition, a non stoichiometric composition is usually associated with the formation of an undesirable side phase secondary phases . Thus the correlation between off stoichiometry and intrinsic point defects as well as the identification and quantification of secondary phases and compositional fluctuations in non stoichiometric kesterite materials is of great importance for the understanding and rational design of solar cell devices. This paper summarizes the latest achievements in the investigation of identification and quantification of intrinsic point defects, compositional fluctuations, and secondary phases in non stoichiometric kesterite type material