Structural relaxations in electronically excited poly(para-phenylene)

Structural relaxations in electronically excited poly(para-phenylene) are studied using many-body perturbation theory and density-functional-theory methods. A sophisticated description of the electron-hole interaction is required to describe the energies of the excitonic states, but we show that the structural relaxations associated with exciton formation can be obtained quite accurately within a constrained density-functional-theory approach. We find that the structural relaxations in the low-energy excitonic states extend over about 8 monomers, leading to an energy reduction of 0.22 eV and a Stokes shift of 0.40 eV.Comment: 4 pages, 3 figure

Charge Transfer in Single Chains of a Donor-Acceptor Conjugated Tri-Block Copolymer.

The photophysics of a conjugated triblock copolymer comprising poly(9,9-dioctylfluorene-co-bis-N,N'-(4-methylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFM) electron donor and poly(4-(9,9-dioctyl-9H-fluoren-2-yl)benzo[c][1,2,5]-thiadiazole) (F8BT) electron acceptor blocks has been studied in solution, in films, and as single chains. While an additional long-wavelength emission apparent in neat films of the copolymer is attributed to interchain exciplex formation, no such long-wavelength emission is apparent in solution or from single molecules. However, in these cases, time-resolved fluorescence measurements indicate the presence of a delayed fluorescence. The kinetics of the delayed emission can be interpreted in terms of an equilibrium between a locally excited and a charge-transfer state at the interface of the copolymer block components. Rate constants and thermodynamic quantities associated with these processes have been evaluated. The single-molecule results allow the assignment of an intramolecular charge-transfer state in an isolated conjugated block copolymer chain.We thank the Australian Research Council (ARC) for financial support of this research through grants DP0986166, LE100100131 and LE110100161. ENH acknowledges an Australian Postgraduate Award. We acknowledge Sam Ashworth for technical assistance with data collection. NCG is grateful to the School of Chemistry, The University of Melbourne for a Wilsmore Fellowship, and to Queen’s College, Melbourne for a Sugden Fellowship.This is the accepted manuscript. The final version is available from ACS at http://pubs.acs.org/doi/abs/10.1021/jp510769p

Efficient light-emitting diodes based on nanocrystalline perovskite in a dielectric polymer matrix.

Electroluminescence in light-emitting devices relies on the encounter and radiative recombination of electrons and holes in the emissive layer. In organometal halide perovskite light-emitting diodes, poor film formation creates electrical shunting paths, where injected charge carriers bypass the perovskite emitter, leading to a loss in electroluminescence yield. Here, we report a solution-processing method to block electrical shunts and thereby enhance electroluminescence quantum efficiency in perovskite devices. In this method, a blend of perovskite and a polyimide precursor dielectric (PIP) is solution-deposited to form perovskite nanocrystals in a thin-film matrix of PIP. The PIP forms a pinhole-free charge-blocking layer, while still allowing the embedded perovskite crystals to form electrical contact with the electron- and hole-injection layers. This modified structure reduces nonradiative current losses and improves quantum efficiency by 2 orders of magnitude, giving an external quantum efficiency of 1.2%. This simple technique provides an alternative route to circumvent film formation problems in perovskite optoelectronics and offers the possibility of flexible and high-performance light-emitting displays.The authors acknowledge funding from the Gates Cambridge Trust, the Singapore National Research Foundation (Energy Innovation Programme Office), the KACST-Cambridge University Joint Centre of Excellence, the Royal Society/Sino-British Fellowship Trust, and the Engineering and Physical Sciences Research Council, UK. We also thank Dr. Alessandro Sepe for helpful discussions of the XRD data.This is the final version of the article. It first appeared from ACS via http://dx.doi.org/10.1021/acs.nanolett.5b0023

Degradation Kinetics of Inverted Perovskite Solar Cells

We explore the degradation behaviour under continuous illumination and direct oxygen exposure of inverted unencapsulated formamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3-xClx perovskite solar cells. We continuously test the devices in-situ and in-operando with current-voltage sweeps, transient photocurrent, and transient photovoltage measurements, and find that degradation in the CH3NH3PbI3-xClx solar cells due to oxygen exposure occurs over shorter timescales than FA0.83Cs0.17Pb(I0.8Br0.2)3 mixed-cation devices. We attribute these oxygen-induced losses in the power conversion efficiencies to the formation of electron traps within the perovskite photoactive layer. Our results highlight that the formamidinium-caesium mixed-cation perovskites are much less sensitive to oxygen-induced degradation than the methylammonium-based perovskite cells, and that further improvements in perovskite solar cell stability should focus on the mitigation of trap generation during ageing

The size of electron-hole pairs in pi conjugated systems

We have performed momentum dependent electron energy-loss studies of the electronic excitations in sexithiophene and compared the results to those from parent oligomers. Our experiment probes the dynamic structure factor S(q,omega)and we show that the momentum dependent intensity variation of the excitations observed can be used to extract the size of the electron-hole pair created in the excitation process. The extension of the electron-hole pairs along the molecules is comparable to the length of the molecules and thus maybe only limited by structural constraints. Consequently, the primary intramolecular electron-hole pairs are relatively weakly bound. We find no evidence for the formation of excitations localized on single thiophene units.Comment: RevTex, 3 figures, to appear in Physical Review Letter

Pressure Tuning of the Charge Density Wave in the Halogen-Bridged Transition-Metal (MX) Solid Pt2Br6(NH3)4Pt_2Br_6(NH_3)_4

We report the pressure dependence up to 95 kbar of Raman active stretching modes in the quasi-one-dimensional MX chain solid $Pt_2Br_6(NH_3)_4$. The data indicate that a predicted pressure-induced insulator-to-metal transition does not occur, but are consistent with the solid undergoing either a three-dimensional structural distortion, or a transition from a charge-density wave to another broken-symmetry ground state. We show that such a transition cacan be well-modeled within a Peierls-Hubbard Hamiltonian. 1993 PACS: 71.30.+h, 71.45.Lr, 75.30.Fv, 78.30.-j, 81.40.VwComment: 4 pages, ReVTeX 3.0, figures available from the authors on request (Gary Kanner, [email protected]), to be published in Phys Rev B Rapid Commun, REVISION: minor typos corrected, LA-UR-94-246

Single-molecule photochemical reactions of Auger-ionized quantum dots

Photoinduced electron transfer in donor-acceptor systems composed of quantum dots (QDs) and electron donors or acceptors is a subject of considerable recent research interest due to the potential applications of such systems in both solar energy harvesting and degradation of organic pollutants. Herein, we employed single-molecule imaging and spectroscopy techniques for the detection of photochemical reactions between 1,4-diaminobutane (DAB) and CdSe/ZnS single QDs. We investigated the reactions by analyzing photoluminescence (PL) intensity and lifetime of QDs at ensemble and single-molecule levels. While DAB was applied to single QDs tethered on a cover slip or QDs dispersed in a solution, PL intensity of QD continuously decreased with a concomitant increase in the PL lifetime. Interestingly, these changes in the PL properties of QD were predominant under high-intensity photoactivation. We hypothesize that the above changes in the PL properties surface due to the transfer of an electron from DAB to Auger-ionized QD followed by elimination of a proton from DAB and the formation of a QD-DAB adduct. Thus, a continuous decrease in the PL intensity of QDs under high-intensity photoactivation is attributed to continuous photochemical reactions of DAB with single QDs and the formation of QD-(DAB)n adducts. We believe that detection and analysis of such photochemical reactions of single QDs with amines will be of considerable broad interest due to the significant impact of photoinduced electron transfer reactions in energy management and environmental remediation

Efficiency of radiative emission from thin films of a light-emitting conjugated polymer

J. A. E. Wasey, A. Safonov, I. D. W. Samuel, and William L. Barnes, Physical Review B, Vol. 64, article 205201 (2001). "Copyright © 2001 by the American Physical Society."We examine the efficiency of radiative emission from thin layers of light-emitting conjugated polymers. We compare our experimental results for photoluminescence of the conjugated polymer poly(2-methoxy, 5-(2′-ethyl-hexyloxy) 1,4 phenylenevinylene) (MEH-PPV) with those of a theoretical model, finding good agreement between the two. The specially developed model takes into account several factors including absorption in the emissive layer, a spread of emitter sites within the layer, and the broad emission spectrum of the polymer. We find that the photoluminescence quantum efficiency for radiative emission of a bare MEH-PPV film on a glass substrate is ∼25%. We then apply our model to study electroluminescent devices. We show that for these structures the efficiency of radiative emission is ∼10%. There is thus potential for considerable improvement in efficiency for both systems through recovery of some of the wasted waveguided light. Finally we use our model to reexamine some controversial results that indicate the probability of singlet exciton formation to be 0.4±0.05, and thus greater than the 0.25 expected from spin statistics. Our reanalysis supports a probability >0.25. We conclude by discussing the limitations of present models, including our own, in predicting the performance of realistic light-emitting diodes