Bone sarcomas: ESMO–EURACAN–GENTURIS–ERN PaedCan Clinical Practice Guideline for diagnosis, treatment and follow-up

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Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers

International audienceThis study explores the needed properties of Transparent Conductive Oxides (TCOs) for bifacial homojunctionsolar cells with potentially passivated contacts. TCO layers with different electrical and optical properties have been testedon both sides of n-type homojunction cells. The high lateral conductivity provided by the diffused emitter and back surfacefield (BSF) greatly reduces the constraints on TCO electrical properties in such structures. An understanding of the requiredproperties of TCO for advanced homojunction applications is given. Hence different O2-rich Indium Tin oxide (ITO) layersare analyzed optically and electrically before being implemented in homojunction solar cells to evaluate their influence onthe device performances. All in all moderately conductive TCOs are shown to be suitable for such applications, allowingbetter optical properties without inducing resistive losses in the devices

Développement de TCO sans Indium pour les cellules solaires silicium à contacts passivés

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Optimizing TCO layers for Novel Bifacial Crystalline Silicon Homojunction Solar Cells integrating Passivated Contacts

International audienceThis study aims at understanding and optimizing the properties of transparent conductive oxides when applied on a homojunction doped silicon solar cells. Thus it deals with contact formation for passivated contact homojunction solar cells, hence the choice of the topic 2.2. Silicon cells: Homojunction solar cells

TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties

International audienceDistrict heating networks are commonly addressed in the literature as one of the most effective solutions for decreasing the greenhouse gas emissions from the building sector. These systems require high investments which are returned through the heat sales. Due to the changed climate conditions and building renovation policies, heat demand in the future could decrease, prolonging the investment return period. The main scope of this paper is to assess the feasibility of using the heat demand-outdoor temperature function for heat demand forecast. The district of Alvalade, located in Lisbon (Portugal), was used as a case study. The district is consisted of 665 buildings that vary in both construction period and typology. Three weather scenarios (low, medium, high) and three district renovation scenarios were developed (shallow, intermediate, deep). To estimate the error, obtained heat demand values were compared with results from a dynamic heat demand model, previously developed and validated by the authors. The results showed that when only weather change is considered, the margin of error could be acceptable for some applications (the error in annual demand was lower than 20% for all weather scenarios considered). However, after introducing renovation scenarios, the error value increased up to 59.5% (depending on the weather and renovation scenarios combination considered). The value of slope coefficient increased on average within the range of 3.8% up to 8% per decade, that corresponds to the decrease in the number of heating hours of 22-139h during the heating season (depending on the combination of weather and renovation scenarios considered). On the other hand, function intercept increased for 7.8-12.7% per decade (depending on the coupled scenarios). The values suggested could be used to modify the function parameters for the scenarios considered, and improve the accuracy of heat demand estimations. Abstract Different Transparent Conductive Oxide (TCO) layers properties are evaluated after annealing steps at temperatures above 200°C, in order to study their potential use in crystalline silicon (c-Si) solar cells fabrication processes. While the conductivity of Indium Tin Oxide (ITO) layers obtained by magnetron sputtering (MS) is almost stable after annealing in air, Aluminum doped Zinc Oxide (AZO) layers deposited by Atomic Layer Deposition (ALD) need a controlled atmosphere to maintain high carrier densities and mobilities. During the annealing processes, contaminating atoms (such as Zn) diffuse into the c-Si bulk and may potentially decrease its quality. Thus, both the contamination of the c-Si bulk and the properties of the AZO layer have been analyzed. Abstract Different Transparent Conductive Oxide (TCO) layers properties are evaluated after annealing steps at temperatures above 200°C, in order to study their potential use in crystalline silicon (c-Si) solar cells fabrication processes. While the conductivity of Indium Tin Oxide (ITO) layers obtained by magnetron sputtering (MS) is almost stable after annealing in air, Aluminum doped Zinc Oxide (AZO) layers deposited by Atomic Layer Deposition (ALD) need a controlled atmosphere to maintain high carrier densities and mobilities. During the annealing processes, contaminating atoms (such as Zn) diffuse into the c-Si bulk and may potentially decrease its quality. Thus, both the contamination of the c-Si bulk and the properties of the AZO layer have been analyzed

Development of industrial processes for the fabrication of high efficiency n-type PERT cells

International audienceIn this work, two process simplifications for n-type PERT (passivated emitter rear totally diffused) bifacial solar cells are investigated. Both are based on a single thermal treatment for elaborating boron and phosphorus doped regions aiming at reducing the number of high temperature steps of standard process. The first simplification shows a mixed co-diffusion from a gaseous source of phosphorus and a boron doped dielectric layer elaborated by low frequency plasma enhanced chemical vapor deposition (PECVD). The second exhibits two independent ion implantations, followed by a co-anneal/activation step. In both cases, implied open-circuit voltages are similar to standard process ($\sim$660-670 mV) and emitters allow good contacting by screen-printing ($ρc$= 3.0-5.0 m$\Omega$ cm$^2$). PERT cells resulting from these processes show very promising performances with efficiency up to 19.7% on industrial 156 x 156 mm$^2$ pseudo square Cz wafers

Développement de poly-silicium dope Bore par voie PECVD pour la passivation des contacts des cellules solaires

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SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation study

International audiencePassivating the contacts of crystalline silicon (c-Si) solar cells with a polycrystalline silicon layer (poly-Si) on a thin oxide (SiOx) film allows to decrease the recombination current at the metal/c-Si interface. In this study, an ex-situ doping method of poly-Si is proposed, involving a SiOxNy:B layer as a dopant source. In this study, we compare the properties (crystallinity of the deposited layer, doping profile and surface passivation properties) of the resulting ex-situ doped poly-Si(B) layer with our in-situ doped reference

Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxide

International audiencePassivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin siliconoxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interface and toincrease the cell efficiency. This study focuses on the development of boron-doped poly-Si layers deposited by PlasmaEnhanced Chemical Vapour Deposition (PECVD) on top of a thin silicon oxide film. First, the deposition and annealingconditions were optimised in order to: (1) reduce the blistering of the poly-Si on the thin SiOx film and (2) improve thepoly-Si conductivity. The passivation properties of the resulting structures have been shown to depend on the blister densityand have been improved through a hydrogenation step leading to a maximum implied open-circuit voltage value of 721 mV