Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces

A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of isolated molecules. Conversely, by substituting the thiophene rings of the oligomers with alkyl chains, a spontaneous ordered film is observed on the HOPG surface. As the interaction of the oligomers is different with both surfaces, the utility of the Si(100) surface to characterize individual oligomers prior to their use into a 2D layer is discussed

Persistent enhancement of the carrier density in electron irradiated InAs nanowires

We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to be caused by the increase of the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the nanowire electrical properties are predominantly affected by radiation-induced defects occuring at the nanowire surface and not in the bulk.Comment: 18 pages, 5 figure

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference between the roughnesses of their respective sidewalls. As the investigation of their length dependence on their diameter indicates that the growth of the NWs predominantly proceeds through the diffusion of adatoms from the substrate up along the sidewalls, difference in the sidewall roughness qualitatively explains the length variation measured between both types of NWs. The formation of atomically flat {111} sidewalls on the <110>-oriented Ge NWs accounts for a larger diffusion length

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition

Thermo-oxidation behaviour of organic matrix composite materials at high temperatures

The present paper is a review of the main activities carried out within the context of the COMPTINN‟ program, a joint research project founded by a FUI program (Fonds Unifiés Interministériels) in which four research teams focused on the thermo-oxidation behaviour of HTS-TACTIX carbon-epoxy composite at „high‟ temperatures (120°C-180°C). The scientific aim of the COMPTINN‟ program was to better identify, with a multi-scale approach, the link between the physico-chemical mechanisms involved in thermo-oxidation phenomena, and to provide theoretical and numerical tools for predicting the mechanical behaviour of aged composite materials including damage onset and development

Atomic scale investigation of silicon nanowires and nanoclusters

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers

HEG82-159 Wood Stoves: Location in the Home

This publication outlines some factors that affect efficient location of a wood stove in the home. Shopping for a wood stove involves making many decisions--size, style and materials--to name a few. Before making the final selection, consider where the stove will be located. The stove\u27s location affects the efficiency of its operation, distribution of heat, convenience, and most importantly, safety

Top-down fabrication, characterisation and applications of silicon nanowires

Cette thèse porte sur l'étude de nanofils silicium réalisés par approche top-down. Elle s'inscrit dans le contexte de la miniaturisation des composants et la compréhension du transport dans les systèmes 1D. Deux voies de fabrication sont envisagées: la lithographie par AFM (Microscope à Force Atomique) et la lithographie électronique. Cette dernière étant plus reproductible, les dispositifs finaux sont fabriqués par cette technique, à partir d'un substrat SOI et plusieurs étapes de gravure et métallisation. L'étude des nanofils par mesures l(V) nous permet de mettre en évidence une zone déplétée à l'interface Si/SiO2 natif. Grâce à l'utilisation de nanofils de largeurs et de longueurs différentes, nous sommes capables de déterminer la largeur de la zone déplétée, la densité d'états d'interface ainsi que le niveau de dopage des nanofils. L'évolution de la résistance des nanofils avec la température est également étudiée et montre une dépendance associée à la diffusion des phonons de surface. Trois applications sont ensuite décrites : un décodeur, un commutateur de courant et un capteur biologique. En effet, la gravure locale des nanofils conduit à une modulation de la bande de conduction, rendant possible la réalisation d'un décodeur. D'autre part, la fabrication de croix à base de nanofils et de grilles latérales à proximité des croix qui contrôlent le passage du courant dans les différentes branches permet de former un commutateur de courant. Enfin, grâce au rapport important de la surface par rapport au volume des nanofils et leur bonne fonctionnalisation chimiques, ceux-ci sont utilisés pour détecter électriquement des interactions biologiques (détection de l'ovalbumine).This work focuses on the study of silicon nanowires made by a top-down approach. The context of the study is the miniaturisation of the components and the understanding of the transport in 1D systems. Two fabrication approaches are studied : AFM lithography (Atomic Force Microscope) and e-beam lithography. The latter being more reproducible, the final devices are fabricated by this technique using a SOI substrate and multiple steps of etching and metallization.Transport characterization of the Si nanowires allows us to highlight a depleted area at the interface Si/native SiO2. Using nanowires with different widths and lengths, we can determine the depletion width, the surface state density as well as the doping level of the nanowires. The evolution of the nanowires resistance with temperature is also investigated, showing a dependence associated with surface phonons scattering. In the last chapter, three applications are described : a decoder, a current switch and a biosensor. The use of a local etching allows the modulation of the conduction band of the nanowires, opening the way to build a decoder using two local gates. Crossbar structures, where lateral gates which can derive the current in the di_erent branches, lead to the fabrication of a current switch. Finally, thanks to the large surface to volume ratio in these structures, the nanowires are used to detect electrically the interactions between molecules (ovalbumine detection).LILLE1-Bib. Electronique (590099901) / SudocSudocFranceF