Reduction of Yield and Income Risk Under Alternative Crop Insurance and Disaster Assistance Plans

This study compares the effectiveness of five crop insurance/disaster assistance plans: an individual farm yield insurance plan similar to the current FCIC multi-peril program ; two area yield insurance plans; a farm yield disaster assistance plan; and an area yield disaster assistance plan. These methods are examined for reduction in yield and gross income variability with and without participation in the government deficiency payment programs using farm-level yield data from 98 dryland wheat farms and 38 dryland corn farms in Kansas . Although individual farm yield insurance is complex, suffers from moral hazard and adverse selection problems, and is likely to be the most expensive to administer , it provides more yield and gross income risk reduction than any of the alternative insurance/disaster assistance plans.Crop Insurance, Crop Disaster Assistance, Risk, Wheat, Corn, Risk and Uncertainty,

Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission

We utilize bias-dependent internal photoemission spectroscopy to determine the metal/dielectric/silicon energy barrier profiles for Au/HfO2/Si and Au/Al2O3/Si structures. The results indicate that the applied voltage plays a large role in determining the effective barrier height and we attribute much of the variation in this case to image potential barrier lowering in measurements of single layers. By measuring current at both positive and negative voltages, we are able to measure the band offsets from Si and also to determine the flatband voltage and the barrier asymmetry at 0 V. Our SiO2 calibration sample yielded a conduction band offset value of 3.03+/-0.1 eV. Measurements on HfO2 give a conduction band offset value of 2.7+/-0.2 eV (at 1.0 V) and Al2O3 gives an offset of 3.3+/-0.1 (at 1.0 V). We believe that interfacial SiO2 layers may dominate the electron transport from silicon for these films. The Au/HfO2 barrier height was found to be 3.6+/-0.1 eV while the Au/Al2O3 barrier is 3.5+/-0.1 eV

Transcriptomes of parents identify parenting strategies and sexual conflict in a subsocial beetle

This work was funded by UK NERC grants to M.G.R. and A.J.M. an NERC studentship to D.J.P. the University of Georgia and a US NSF grant to A.J.M. and M.G.R.Parenting in the burying beetle Nicrophorus vespilloides is complex and, unusually, the sex and number of parents that can be present is flexible. Such flexibility is expected to involve specialized behaviour by the two sexes under biparental conditions. Here, we show that offspring fare equally well regardless of the sex or number of parents present. Comparing transcriptomes, we find a largely overlapping set of differentially expressed genes in both uniparental and biparental females and in uniparental males including vitellogenin, associated with reproduction, and takeout, influencing sex-specific mating and feeding behaviour. Gene expression in biparental males is similar to that in non-caring states. Thus, being ‘biparental’ in N. vespilloides describes the family social organization rather than the number of directly parenting individuals. There was no specialization; instead, in biparental families, direct male parental care appears to be limited with female behaviour unchanged. This should lead to strong sexual conflict.Publisher PDFPeer reviewe

GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3La_{1.8}Y_{0.2}O_3 as Dielectric

We demonstrate high performance enhancement-mode (E-mode) GaAs NMOSFETs with an epitaxial gate dielectric layer of $La_{1.8}Y_{0.2}O_3$ grown by atomic layer epitaxy (ALE) on GaAs(111)A substrates. A $0.5-\mu m$-gate-length device has a record-high maximum drain current of 336 mA/mm for surface-channel E-mode GaAs NMOSFETs, a peak intrinsic transconductance of 210 mS/mm, a subthreshold swing of 97 mV/dec and an $I_{ON}/I_{OFF}$ ratio larger than $10^7$. Thermal stability of the single crystalline $La_{1.8}Y_{0.2}O_3$-single crystalline GaAs interface is investigated by capacitance-voltage (C-V) and conductance-voltage (G-V) analysis. High temperature annealing is found to be effective to reduce the $D_{it}$.Chemistry and Chemical Biolog

Density perturbations in the brane-world

In Randall-Sundrum-type brane-world cosmologies, density perturbations generate Weyl curvature in the bulk, which in turn backreacts on the brane via stress-energy perturbations. On large scales, the perturbation equations contain a closed system on the brane, which may be solved without solving for the bulk perturbations. Bulk effects produce a non-adiabatic mode, even when the matter perturbations are adiabatic, and alter the background dynamics. As a consequence, the standard evolution of large-scale fluctuations in general relativity is modified. The metric perturbation on large-scales is not constant during high-energy inflation. It is constant during the radiation era, except at most during the very beginning, if the energy is high enough.Comment: Additional arguments and minor corrections; version accepted by Phys. Rev.

Anisotropy dissipation in brane-world inflation

We examine the behavior of an anisotropic brane-world in the presence of inflationary scalar fields. We show that, contrary to naive expectations, a large anisotropy does not adversely affect inflation. On the contrary, a large initial anisotropy introduces more damping into the scalar field equation of motion, resulting in greater inflation. The rapid decay of anisotropy in the brane-world significantly increases the class of initial conditions from which the observed universe could have originated. This generalizes a similar result in general relativity. A unique feature of Bianchi I brane-world cosmology appears to be that for scalar fields with a large kinetic term the initial expansion of the universe is quasi-isotropic. The universe grows more anisotropic during an intermediate transient regime until anisotropy finally disappears during inflationary expansion.Comment: 6 pages, 5 figures; minor typo corrected in Eq. (16); matches version to appear in Phy Rev

Restoring the sting to metric preheating

The relative growth of field and metric perturbations during preheating is sensitive to initial conditions set in the preceding inflationary phase. Recent work suggests this may protect super-Hubble metric perturbations from resonant amplification during preheating. We show that this possibility is fragile and sensitive to the specific form of the interactions between the inflaton and other fields. The suppression is naturally absent in two classes of preheating in which either (1) the vacua of the non-inflaton fields during inflation are deformed away from the origin, or (2) the effective masses of non-inflaton fields during inflation are small but during preheating are large. Unlike the simple toy model of a $g^2 \phi^2 \chi^2$ coupling, most realistic particle physics models contain these other features. Moreover, they generically lead to both adiabatic and isocurvature modes and non-Gaussian scars on super-Hubble scales. Large-scale coherent magnetic fields may also appear naturally.Comment: 6 pages, 3 ps figures, RevTex, revised discussion of backreaction and new figure. To appear Phys. Rev. D (Rapid Communication