Addressing business agility challenges with enterprise systems

It is clear that systems agility (i.e., having a responsive IT infrastructure that can be changed quickly to meet changing business needs) has become a critical component of organizational agility. However, skeptics continue to suggest that, despite the benefits enterprise system packages provide, they are constraining choices for firms faced with agility challenges. The reason for this skepticism is that the tight integration between different parts of the business that enables many enterprise systems\u27 benefits also increases the systems\u27 complexity, and this increased complexity, say the skeptics, increases the difficulty of changing systems when business needs change. These persistent concerns motivated us to conduct a series of interviews with business and IT managers in 15 firms to identify how they addressed, in total, 57 different business agility challenges. Our analysis suggests that when the challenges involved an enterprise system, firms were able to address a high percentage of their challenges with four options that avoid the difficulties associated with changing the complex core system: capabilities already built-in to the package but not previously used, leveraging globally consistent integrated data already available, using add-on systems available on the market that easily interfaced with the existing enterprise system, and vendor provided patches that automatically updated the code. These findings have important implications for organizations with and without enterprise system architectures

Indirect Wafer Bonding and Epitaxial Transfer of GaSb-Based Materials

Results from a study of indirect wafer bonding and epitaxial transfer of GaSb-based materials are presented. Benzocyclobutene (BCB) was used as a bonding agent to bond GaSb and epitaxial structures lattice matched to GaSb onto Si, GaAs, and sapphire carrier substrates. To better understand sources of stress during the bonding process, which can result in cracking and subsurface damage of the GaSb-based materials, BCB’s hardness and reduced elastic modulus were measured at various stages during the curing process. Based on the results of curing experiments, a bonding and epitaxial transfer process for GaSb-based materials was then developed. Following bonding, using an experimentally determined low-stress cure cycle, GaSb substrates were removed from epitaxial layers of InAsSb using a combination of mechanical thinning and polishing followed by selective chemical etching using a hydrofluoric and chromic acid solution. Etch selectivity data are also presented where selectivity greater than 100:1 is achieved for GaSb:InAsSb

Funneling Light Through a Subwavelength Aperture with Epsilon-Near-Zero Materials

Integration of the next generation of photonic structures with electronic and optical on-chip components requires the development of effective methods for confining and controlling light in subwavelength volumes. Several techniques enabling light coupling to sub-wavelength objects have recently been proposed, including grating-, and composite-based solutions. However, experi-mental realization of these couplers involves complex fabrication with \sim 10nm resolution in three dimensions. One promising alternative to complex coupling structures involves materials with vanishingly small dielectric permittivity, also known as epsilon-near-zero (ENZ) materials. In contrast to the previously referenced approaches, a single at layer of ENZ-material is expected to provide effcient coupling between free-space radiation and sub-wavelength guiding structures. Here we report the first direct observation of bulk-ENZ-enhanced transmission through a subwavelength slit, accompanied by a theoretical study of this phenomenon. Our study opens the door to multiple practical applications of ENZ materials and ENZ-based photonic systems

High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth

Optically active, highly uniform, cylindrical InGaAs quantum dot ͑QD͒ arrays have been fabricated using nanosphere lithography combined with Bromine ion-beam-assisted etching and molecular beam epitaxy ͑MBE͒-assisted GaAs mass transport. Previously fabricated QD nanopillar arrays showed significant degradation of optical properties due to the etch damage. Here, a novel mass transport process in a Riber 3200 was performed to encapsulate the lithographically defined InGaAs disk QDs in a GaAs matrix, resulting in the passivation of the etch-damaged QD sidewall layer. Photoluminescence emission intensity following the mass transport process increased by a magnitude of 4-10 as compared to that from unprocessed nanopillar sample. In addition, a PL peak energy redshift was observed after mass transport, presumably due to the decrease in the lateral barrier potential from vacuum to GaAs, as well as the elimination of the depletion layer. Furthermore, the mass transport process in the high vacuum MBE environment enables GaAs overgrowth with few defects and dislocations following mass transport for surface planarization. PL emission intensity increased by an additional factor of 4 following GaAs overgrowth, bringing the QD intensity to 1 2 of that of the original single quantum well. Thus, the potential of the MBE-assisted mass transport process has been demonstrated to fabricate high optical quality InGaAs quantum dots encapsulated in a GaAs matrix for device applications

Observations of the Askaryan Effect in Ice

We report on the first observations of the Askaryan effect in ice: coherent impulsive radio Cherenkov radiation from the charge asymmetry in an electromagnetic (EM) shower. Such radiation has been observed in silica sand and rock salt, but this is the first direct observation from an EM shower in ice. These measurements are important since the majority of experiments to date that rely on the effect for ultra-high energy neutrino detection are being performed using ice as the target medium. As part of the complete validation process for the Antarctic Impulsive Transient Antenna (ANITA) experiment, we performed an experiment at the Stanford Linear Accelerator Center (SLAC) in June 2006 using a 7.5 metric ton ice target, yielding results fully consistent with theoretical expectations

New Limits on the Ultra-high Energy Cosmic Neutrino Flux from the ANITA Experiment

We report initial results of the first flight of the Antarctic Impulsive Transient Antenna (ANITA-1) 2006-2007 Long Duration Balloon flight, which searched for evidence of a diffuse flux of cosmic neutrinos above energies of 3 EeV. ANITA-1 flew for 35 days looking for radio impulses due to the Askaryan effect in neutrino-induced electromagnetic showers within the Antarctic ice sheets. We report here on our initial analysis, which was performed as a blind search of the data. No neutrino candidates are seen, with no detected physics background. We set model-independent limits based on this result. Upper limits derived from our analysis rule out the highest cosmogenic neutrino models. In a background horizontal-polarization channel, we also detect six events consistent with radio impulses from ultra-high energy extensive air showers.Comment: 4 pages, 2 table

Observations of the Askaryan Effect in Ice

We report on the first observations of the Askaryan effect in ice: coherent impulsive radio Cherenkov radiation from the charge asymmetry in an electromagnetic (EM) shower. Such radiation has been observed in silica sand and rock salt, but this is the first direct observation from an EM shower in ice. These measurements are important since the majority of experiments to date that rely on the effect for ultra-high energy neutrino detection are being performed using ice as the target medium. As part of the complete validation process for the Antarctic Impulsive Transient Antenna (ANITA) experiment, we performed an experiment at the Stanford Linear Accelerator Center (SLAC) in June 2006 using a 7.5 metric ton ice target, yielding results fully consistent with theoretical expectations.Comment: 4 pages, 5 figures, minor correction

The molybdenum isotopic composition of the modern ocean

Natural variations in the isotopic composition of molybdenum (Mo) are showing increasing potential as a tool in geochemistry. Although the ocean is an important reservoir of Mo, data on the isotopic composition of Mo in seawater are scarce. We have recently developed a new method for the precise determination of Mo isotope ratios on the basis of preconcentration using a chelating resin and measurement by multiple-collector inductively coupled plasma mass spectrometry (MC-ICP-MS), which allows us to measure every stable Mo isotope. In this study, 172 seawater samples obtained from 9 stations in the Pacific, Atlantic, and Southern Oceans were analyzed, giving global coverage and the first full depth-profiles. The average isotope composition in δA/95Mo (relative to a Johnson Matthey Mo standard solution) was as follows: δ92/95Mo = –2.54 ± 0.16‰ (2SD), δ94/95Mo = –0.73 ± 0.19‰, δ96/95Mo = 0.85 ± 0.07‰, δ97/95Mo = 1.68 ± 0.08‰, δ98/95Mo = 2.48 ± 0.10‰, and δ100/95Mo = 4.07 ± 0.18‰. The δ values showed an excellent linear correlation with atomic mass of AMo (R2 = 0.999). Three-isotope plots for the Mo isotopes were fitted with straight lines whose slopes agreed with theoretical values for mass-dependent isotope fractionation. These results demonstrate that Mo isotopes are both uniformly distributed and follow a mass-dependent fractionation law in the modern oxic ocean. A common Mo standard is urgently required for the precise comparison of Mo isotopic compositions measured in different laboratories. On the other hand, our results strongly support the possibility of seawater as an international reference material for Mo isotopic composition

HVPE growth and characterization of GaP on different substrates and patterned templates for frequency conversion devices

This article describes efforts to achieve fast deposition of thick Quasi-Phase-Matched (QPM) GaP structures with high surface and structural quality on oriented patterned (OP) templates in a Hydride Vapor Phase Epitaxial (HVPE) process. These QPM structures will be incorporated in devices for conversion of frequencies from the near infrared to the mid infrared and THz regions, where powerful and tunable sources are in great demand for both military and civilian applications. In contrast with GaAs—the most studied OP QPM material—the two-photon absorption of GaP is predicted to be extremely low, which allows pumping with a number of convenient sources between 1 – 1.7 µm. Unpatterned GaP layers up to 370 µm thick were grown with growth rates up to 93 µm/hr with high reproducibility on bare substrates. The layers demonstrated smooth surface morphology with RMS < 1 nm and high structural quality with FWHM equal to 39 arcsec for layers grown on GaP and 112 arcsec for those grown on GaAs. Growth on OP-GaP templates resulted in 142 µm thick QPM structures deposited at a growth rate of 71 µm/h with good vertical (normal to the layer surface) propagation of the initial pattern. When the growth was performed on OP-GaAs one of the domains showed a trend toward a faceting growth. Further investigations are in progress to equalize the vertical and lateral growth of the two domains, and determine the best orientation of the substrate and pattern in order to achieve structures thick enough for high power nonlinear applications

Compound Semiconductor Materials and Devices

Contains table of contents for Part I, table of contents for Section 1, reports on fourteen research projects and a list of publications.Defense Advanced Research Projects Agency/National Center for Integrated Photonics TechnologyFannie and John Hertz Foundation Graduate FellowshipJoint Services Electronics Program Grant DAAH04-95-1-0038National Science Foundation Graduate FellowshipNTT CorporationNational Science FoundationU.S. Navy - Office of Naval ResearchToshiba CorporationAT&T Bell Laboratories Graduate Fellowshi