The microstructure and microtexture of zirconium oxide films studied by transmission electron backscatter diffraction and automated crystal orientation mapping with transmission electron microscopy

A detailed characterization of nanostructured thin zirconium oxide films formed during aqueous corrosion of a nuclear-grade zirconium alloy (Zircaloy-4) has been carried out by means of two novel, ultra-high-spatial-resolution grain mapping techniques, namely automated crystal orientation mapping in the transmission electron microscope (TEM) and transmission electron backscatter diffraction (t-EBSD). While the former provided excellent spatial resolution with the ability to identify tetragonal ZrO<sub>2</sub> grains as small as ∼5 nm, the superior angular resolution and unambiguous indexing with t-EBSD enabled verification of the TEM observations. Both techniques revealed that in a stress-free condition (TEM foil prepared by focused ion beam milling), the oxide consists mainly of well-oriented columnar monoclinic grains with a high fraction of transformation twin boundaries, which indicates that the transformation from tetragonal to monoclinic ZrO<sub>2</sub> is a continuous process, and that a significant fraction of the columnar grains transformed from stress-stabilized tetragonal grains with (0 0 1) planes parallel to the metal–oxide interface. The TEM analysis also revealed a small fraction of size-stabilized, equiaxed tetragonal grains throughout the oxide. Those grains were found to show significant misalignment from the expected (0 0 1) growth direction, which explains the limited growth of those grains. The observations are discussed in the context of providing new insights into corrosion mechanisms of zirconium alloys, which is of particular importance for improving service life of fuel assemblies used in water-cooled reactors

Anomalous twin boundaries in two dimensional materials

Twin boundary defects form in virtually all crystalline materials as part of their response to applied deformation or thermal stress. For nearly six decades, graphite has been used as a textbook example of twinning with illustrations showing atomically sharp interfaces between parent and twin. Using state-of-the-art high-resolution annular dark-field scanning transmission electron microscopy, we have captured atomic resolution images of graphitic twin boundaries and find that these interfaces are far more complex than previously supposed. Density functional theory calculations confirm that the presence of van der Waals bonding eliminates the requirement for an atomically sharp interface, resulting in long-range bending across multiple unit cells. We show these remarkable structures are common to other van der Waals materials, leading to extraordinary microstructures, Raman-active stacking faults, and sub-surface exfoliation within bulk crystals

Laboratory Evaluation of Color Change and Surface Roughness of White Spot Lesions Treated with Resin Infiltration and Fluoride Therapy

Background and Objective: Two non-invasive treatment methods for treating white spot lesions (WSLs) include resin infiltration and fluoride therapy. Contradictions have been raised regarding the color change and surface roughness of the lesions based on these methods. Therefore, this study was conducted to investigate the color change and surface roughness of white spot lesions after treatment with resin infiltration and fluoride therapy. Methods: In this laboratory study, 40 buccal and lingual sections were prepared from 20 extracted healthy premolar teeth. 10 samples were considered as the control group, and in the other 30 samples, decayed lesions were created artificially. White spot lesions were randomly prepared in three groups without treatment, 0.05% sodium fluoride solution and resin infiltration (n=10). Then, the rate of color change and surface roughness of the samples after being placed in black tea and also after brushing were measured and compared using spectrophotometer and profilometer. Findings: The surface roughness of samples in resin infiltration, intact enamel and fluoride groups were 163.46±64.67, 259.6±43.12 and 293.92±41.36 micrometers, respectively (p<0.001). Before placing in tea and after brushing, no significant difference was observed in the color of the samples, but after staining, the color change in WSL (9.14±5.85), fluoride (17.40±4.13) and resin infiltration (12.13±4.88) groups was significant (p=0.004); the fluoride group showed significantly more color change compared to the WSL group (p=0.003), but the difference between the other groups was not significant. Conclusion: The results of this study show that if the resin infiltration method is used in the treatment of white spot lesions, less surface roughness and color change is observed compared to fluoride therapy

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates

Electronic properties of graphene encapsulated with different two-dimensional atomic crystals.

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V(-1) s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ∼1000 cm(2) V(-1) s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.This work was supported by the European Research Council, Graphene Flagship, Engineering and Physical Sciences Research Council (UK), the Royal Society, US Office of Naval Research, US Air Force Office of Scientific Research, US Army Research Office

WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature

Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for optoelectronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2- and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250× more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such different temperature dependences to the inverted sign of spin–orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.Comment: 19 pages, 11 figures, 1 table including Supporting Informatio