Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped diamond layers

To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 1020 cm-3 were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p-/p++/p- multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.4 page

TEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparation

Homoepitaxial diamond structure observation by transmission electron microscopy (TEM) is still a very hard job due to the difficulty in preparing electron transparent samples for the further observation. The present contribution details the experimental operations with their respective conditions step by step. Finally high resolution TEM (HREM) observations of a CVD grown epilayer on a unnintentionally doped HPHT (001) oriented substrate are present to show the high quality of the sample preparation method.4 page

Relaciones entre la articulación temporomandibular y las maloclusiones de clase III de angle

La relación entre las maloclusiones de clase III y la articulación temporomandibular es un tema de plena actualidad en odontología. En este artículo, se presenta una revisión bibliográfica de la fisiología y la patología articulares en las maloclusiones de clase III y las relaciones entre el tratamiento ortodóncico y la patología articular, y entre la cirugía ortognática y la patología articular en dichas maloclusiones

Tratamiento quirúrgico-ortodóncico del canino superior incluido en posición vestibular

En el maxilar superior, el canino es el diente que se encuentra incluido con mayor frecuencia, después de los terceros molares. Se observa aproximadamente en un 2% de los pacientes que acuden a una consulta para tratamiento ortodóncico. Su ubicación es normalmente palatina, con una relación 2-3: I respecto a la localización vestibular o media. Para colocar este diente en una posición correcta dentro de la arcada debe realizarse en muchas ocasiones un tratamiento combinado ortodóncico­quirúrgico. Cuando el canino tiene una localización palatina, la técnica quirúrgica de elección suele ser una fenestración para hacer tracción extramucosa; pero cuando se ubica en posición vestibular, existen diversas opciones que dependen principalmente de la altura y de la cantidad de encía adherida que rodea al diente. Hemos realizado una revisión bibliográfica de los diversos abordajes quirúrgicos posibles ante un canino incluido por vestibular, sus indicaciones, ventajas e inconvenientes, y la ilustraremos con diversos casos tratados en nuestro servicio

A microstructural study of superconductive nanocrystalline diamond

A transmission electron microscopy (TEM) study of superconducting nanocrystalline diamond (NCD) continuous layers is reported. The high resolution transmission electron microscopy (HREM) and the diffraction contrast modes of observations are used to reveal the nanograins configuration. Three types of them are observed: first, close to the interface with the Si/SiO2 substrate, 10 to 20 nm-sized diamond 16 seeds resulting from the 5nm size diamond powder deposition before growth that show some regrowth during CVD process, second a diamond overgrown layer, quasi-epitaxially by coalesced columnar NCD grains, and finally, up to the free surface, a thin disordered region composed of nanocrystallites smaller than 6 nm. This last layer was not nominally expected and is attributed to a renucleated-like (RND) diamond layer embedding ultra nanocrystalline grains. Diffraction contrast observations confirm this HREM observed behaviour.6 page

Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

In some diamond-based semiconducting devices, large variations of doping level are required over short distances. Tools to determine doping level and defects distribution should therefore be developed. The present contribution shows the capabilities of electron microscopy in this field. Focused ion beam (FIB-dual beam) cross section preparations allowed evaluating doping level in highly boron doped sample with doping transition down to some nm by diffraction contrast mode of transmission electron microscopy (CTEM) and by high angle annular dark field mode of scanning transmission electron microscopy (HAADF-STEM). The sensibility of the latter is around 1019cm-3 and, thus, cathodoluminescence (CL)is required for lower doping levels. Cross sectional analysis on FIB prepared lamella allowed to separate the epilayer behaviour from that of the substrate. Mid-gap centers involving boron, hydrogen and, for some peaks, also nitrogen are revealed. sp2 bonds are also present in the grown epilayer. These transitions make difficult the observation of excitonic recombinations in the cross section configuration.5 page

Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

To assess diamond-based semiconducting devices, a reduction of point defect levels and an accurate control of doping are required as well as the control of layer thickness. Among the analyses required to improve such parameters, cross sectional studies should take importance in the near future. The present contribution shows how FIB (focused ion beam) preparations followed by electron microscopy related techniques as TEM or CL allowed to performanalysis versus depth in the layer, doping and point defect levels. Three samples grown along the sameweek in the same machinewith identical growth conditions but on different substrates (CVD-IIIa (110) oriented, CVD-optical grade (100) oriented and a HPHT-Ib (100) oriented) are studied. Even though A-band is observed by CL, no dislocation is observed by CTEM. Point defect type and level are shown to substantially change with respect to the substrate type as well as the boron doping levels that vary within an order of magnitude. H3 present in the epilayer grown on HPHT type of substrate is replaced by T1 and NE3 point defects for epilayers grown on the CVD type one. An increase of excitonic transitions through LO phonons is also shown to take place near the surface while only TO ones are detected deeper in the epilayer. Such results highlight the importance of choosing the correct substrate.5 page

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Doping diamond layers for electronic applications has become straightforward during the last two decades. However, dislocation generation in diamond during the microwave plasma enhanced chemical vapor deposition growth process is still not fully understood. This is a truly relevant topic to avoid for an optimal performance of any device, but, usually, it is not considered when designing diamond structures for electronic devices. The incorporation of a dopant, here boron, into a lattice as close as that of diamond, can promote the appearance of dislocations in the epilayer. The present contribution analyzes the different processes that can take place in this epilayer and gives some rules to avoid the formation of dislocations, based on the comparison of the different dislocation generation mechanisms. Indeed, competitive mechanisms, such as doping atom proximity effect and lattice strain relaxation, are here quantified for heavily boron-doped diamond epilayers. The resulting growth condition windows for defect-free heavily doped diamond are here deduced, introducing the diamond parameters and its lattice expansion in several previously published critical thickness (h(c)) and critical doping level relationships for different doping levels and growth conditions. Experimental evidence supports the previously discussed thickness-doping-growth condition relationships. Layers with and without dislocations reveal that not only the thickness but also other key factors such as growth orientation and growth parameters are important, as dislocations are shown to be generated in epilayers with a thickness below the People and Bean critical thickness

Granular cell tumor : report of 8 intraoral cases

Granular cell tumor (GCT) is an uncommon neoplasm of controversial origin that can appear in any corporal localization, including the orofacial region. Although aggressive and malignant variants of this neoplasm have been described, most of GCTs are benign. In spite of the amount of research, the etiology of this neoplasm remains unclear and its histogenesis and its possible muscular, conective or neural origin has been broadly debated. In this paper 8 oral cases are presented, corresponding to 5 women and 3 men, with a mean age of 36.1 years old and a mean time of evolution of the lesions of 8.3 months. The most common localization was the tongue (75%). In all the cases a resection with safety margins of the lesions was carried out under local anesthesia. The samples were fixed and processed for histopathological study. The main clinicopathologic and diagnostic features of this neoplasm are reviewed and discussed